NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
C
J
@T
A
=
55 C
PR3001G thru PR3007G
FEATURES
Fast switching for high efficiency
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic ma terial has UL flammability classification
94V-0
ME CHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECT RICAL CHARACTERISTI CS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive load, der a te c u rr e n t b y 20%
PR
3003 G
200
140
200
PR
3001G
50
35
50
PR
3007G
1000
700
1000
PR
3002G
100
70
100
PR
3006G
800
560
800
PR
3005G
600
420
600
PR
3004G
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super impo sed on rated load
Maximum Re c urrent Peak Reverse Volt age
Maximu m R MS Volta ge
Maximum DC Block ing Voltage
Maximum f orward Voltage at 3.0A DC
3.0
125
1.3
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Tem peratu re Range
-55 to +150 C
Typical Therm al Resistance (Note 2)
R
0JA
16.0
C/W
Typical Junction
Capacitance (No te1)
50
pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 5.0
100
uA
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 3)
T
RR
150 250 500
ns
REVERSE VOLTAGE -
50
to
1000
Volts
FORWARD CURRENT -
3.0
Amperes
FAST RECOVERY
GLAS S PA SSIVATED RECTIFIERS
All Dimensions in millimete r
Max.
Mi n.
DO-201AD
Dim.
A
D
C
B 25. 4 9.5 0
-
7.30
1.2 0
4.8 0 5.3 0
1.3 0
DO-201AD
A
C
D
A
B
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDEF01