4-83
File Number
3987.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
IRFR9120, IRFU9120
5.6A, 100V, 0.600 Ohm, P-Channel Power
MOSFETs
These advanced power MOSFETs are designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. They are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate-drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17501.
Features
• 5.6A, 100V
•r
DS(ON) = 0.600Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER PACKAGE BRAND
IRFR9120 TO-252AA IF9120
IRFU9120 TO-251AA IF9120
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.
G
D
S
JEDEC T O-251AA JEDEC TO-252AA
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet July 1999
4-84
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR9120, IRFU9120 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5.6
Refer to Peak Current Curve A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
0.33 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V -100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2.0 - -4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC - - -250 µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source on Resistance (Note 2) rDS(ON) ID = 3.4A, VGS = -10V, (Figure 9) - - 0.600 W
Turn-On Time tON VDD = -50V, ID = 6.8A, RL = 7.1Ω,
VGS = -10V, RGS =18Ω
(Figures 13, 16, 17)
- - 60 ns
Turn-On Delay Time td(ON) - 9.6 - ns
Rise Time tr-29 - ns
Turn-Off Delay Time td(OFF) -21 - ns
Fall Time tf-25 - ns
Turn-Off Time tOFF - - 60 ns
Total Gate Charge QgVGS = 0V to -10V VDD = -80V,
ID = 5.6A,
RL = 14.3Ω
IG(REF) = 1.0mA
- - 18 nC
Gate to Drain Charge Qgd --9nC
Gate to Source Charge Qgs --3nC
Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 485 - pF
Output Capacitance COSS - 170 - pF
Reverse Transfer Capacitance CRSS -45 - pF
Thermal Resistance Junction to Case RθJC - - 3.00 oC/W
Thermal Resistance Junction to Ambient RθJA - - 100 oC/W
Source to Drain Diode Ratings and Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = -5.6A - - -6.3 V
Reverse Recovery Time trr ISD = -6.8A, dISD/dt = -100A/µs - 130 150 ns
Reverse Recovery Charge QRR - 0.70 1.4 µC
NOTES:
2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
IRFR9120, IRFU9120
4-85
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
00 25 50 75 100 125 150
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE (oC)
-6
-2
-4
-1
025 50 75 100 125 150
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
-3
-5
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 10-2 10-1 100101
10-4
0.01
0.1
1
ZθJC, TRANSIENT
10
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Zθ JC + TC
PDM
t1t2
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL IMPEDANCE
-30
-10
-1
-0.1-1 -10 -100
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
100µs
10ms
100ms
DC
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
TJ = MAX RATED
10-5 101
-102
t, PULSE WIDTH (ms)
IDM, PEAK CURRENT (A)
VGS = -20V
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
II
25
150 TC
–
125
----------------------
=
-101
-10010-3 10-2 10-1 100
10-4
TC = 25oC
IRFR9120, IRFU9120
4-86
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-14
-10
-10.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
STARTING TJ = 150oC
STARTING TJ = 25oC
EAS = 210mJ
CONDITIONS:
VDD = -25V, IAS = -5.6A,
L = 10mH, STARTING TJ = 25oC
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R = 0
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 00 -2 -4 -6 -8 -10
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -5V
VGS = -6V
VGS = -8V
VGS = -7V
VGS = -10V
-2
-4
-6
-12
VGS = -4.5V
VGS = -20V
-8
-10 TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0 -2 -4 -6 -8 -10
VGS, GATE TO SOURCE VOLTAGE (V)
IDS(ON), DRAIN TO SOURCE CURRENT (A)
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX -55oC
150oC
25oC
-3
-6
-12
-9
VDD = -15V
2.0
1.5
1.0
0.5
0-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
2.5 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -10V, ID = -3.4A
ON RESISTANCE
2.0
1.5
1.0
0.5
0-80 -40 0 40 80 160120
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED GATE
VGS = VDS, ID = -250µA2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
ID = -250µA
IRFR9120, IRFU9120
4-87
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
400
300
200
100
00 -5 -10 -15 -20 -25
C, CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
600
CISS
COSS
500
CRSS
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
-100
-80
-60
-20
0
-10
-8
-6
-2
0
20 IG(REF)
IG(ACT) 80 IG(REF)
IG(ACT)
t, TIME (µs)
VDD =BVDSS VDD = BVDSS
RL = 1.2Ω
IG(REF) = -1.0mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
VGS= -10V
-4
-40
tP
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
td(ON)
tr
90%
10%
VDS 90%
tf
td(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
10%
0
0
IRFR9120, IRFU9120
4-88
PSPICE Electrical Model
.SUBCKT IRFU9120 2 1 3 REV 9/16/94
CA 12 8 618.9e-12
CB 15 14 633.9e-12
CIN 6 8 441.1e-12
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -127.38
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.609e-9
LSOURCE 3 7 2.609e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 245.6e-3
RGATE 9 20 2.69
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 123.96e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.77
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/13.2,6))}
.MODEL DBDMOD D (IS=5.1e-14 RS=9.4e-2 TRS1=-2.2e-3 TRS2=-5.2e-6 CJO=6.43e-10 TT=9.7e-8)
.MODEL DBKMOD D (RS=1.45 TRS1=3.84e-4 TRS2=-9.83e-6)
.MODEL DPLCAPMOD D (CJO=235e-12 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.49 KP=1.58 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.01e-3 TC2=1.05e-6)
.MODEL RDSMOD RES (TC1=6.23e-3 TC2=1.23e-5)
.MODEL RSCLMOD RES (TC1=2.05e-3 TC2=-0.35e-5)
.MODEL RVTOMOD RES (TC1=-3.46e-3 TC2=3.33e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=6.3 VOFF=4.3)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.3 VOFF=6.3)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.0 VOFF=-4.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Tem-
perature Options; written by William J. Hepp and C. Frank Wheatley.
MOS1
10 DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
LSOURCE
DBODY
RSOURCE
EBREAK
MOS2
RIN CIN
VTO
ESG
CA
EVTO
RGATE
GATE
LGATE
52
11
21
8
6
16
20
9
118
8
6
8
17
18
+
-
+
-
+
-
+
-
3
SOURCE
RBREAK
RVTO
VBAT
+
-
19
IT
EDSEGS
S1A S2A
S2BS1B
CB
1817
7
12 15
14
13
13
814
13
5
8
+
-
+
-
5
51
RSCL2 RSCL1
ESCL
6
8
IRFR9120, IRFU9120
4-89
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
IRFR9120, IRFU9120
