Typical Application Circuit appears at end of data sheet.
19-6480; Rev 3 1/15
Ordering Information appears at end of data sheet.
General Description
The MAX15090/MAX15090A ICs are integrated solutions
for hot-swap applications requiring the safe insertion
and removal of circuit line cards from a live backplane.
The devices integrate a hot-swap controller, 6mω power
MOSFET, and an electronic circuit-breaker protection in
a single package.
The devices integrate an accurate current-sense circuitry
and provide 220FA/A of proportional output current.
The devices are designed for protection of 2.7V to 18V
supply voltages.
These devices implement a foldback current limit during
startup to control inrush current lowering di/dt and keep
the MOSFET operating under safe operating area (SOA)
conditions. After the startup cycle is complete, on-chip
comparators provide VariableSpeed/BiLevelK
protection against short-circuit and overcurrent faults, and
immunity against system noise and load transients. The
load is disconnected in the event of a fault condition.
The devices are factory calibrated to deliver accurate
overcurrent protection with Q10% accuracy. During a fault
condition, the MAX15090 latches off, while the MAX15090A
enters autoretry mode.
The devices feature an IN-to-OUT short-circuit detection
before startup. The devices provide a power-MOSFET
GATE pin to program the slew rate during startup by
adding an external capacitor. The devices have
overvoltage/undervoltage input pins that can detect an
overvoltage/undervoltage fault and disconnect the IN
from the OUT. Additional features include internal over-
temperature protection, power-good output, and fault-
indicator output.
The MAX15090/MAX15090A are available in a 28-bump,
2.07mm x 3.53mm, power wafer-level package (WLP)
and are rated over the -40°C to +85°C extended
temperature range.
Benets and Features
●Integration Reduces Solution Size for Blade Servers
and Other Space-Constrained Designs
• Integrated 6mω (typ) Internal Power MOSFET
Overvoltage Protection
• Power-Good and Fault Outputs
• Programmable Undervoltage Lockout
• Current Reporting Without Need for External
RSENSE
• Thermal Protection
●Flexibility Enables Use in Many Unique Designs
• 2.7V to 18V Operating Voltage Range
• Adjustable Circuit-Breaker Current/Current-Limit
Threshold
• Programmable Slew-Rate Control
• Variable-Speed Circuit-Breaker Response
• Latchoff or Automatic Retry Options
●Safety Features Ensure Accurate, Robust Protection
• 12A (max) Load Current Capability
• Q10% Circuit-Breaker Threshold Accuracy
• Inrush Current Regulated at Startup with Foldback
• Implementation for di/dt Control
• IN-to-OUT Short-Circuit Detection
VariableSpeed/BiLevel is a trademark of Maxim Integrated
Products, Inc.
Applications
●RAID Systems
●Storage Bridge Bay
●Disk Drive Power
●Server I/O Cards
●Industrial
MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
EVALUATION KIT AVAILABLE
VCC to GND ...........................................................-0.3V to +20V
IN to GND .............................................................. -0.3V to +20V
OUT to GND ............................................... -0.3V to (VIN + 0.3V)
GATE to OUT ...........................................................-0.3V to +6V
CDLY, ISENSE to GND ...........................-0.3V to (VREG + 0.3V)
EN, CB, UV, OV to GND .........................................-0.3V to +6V
REG to GND ............................-0.3V to min (+6V, (VCC + 0.3V))
PG, FAULT to GND ...............................................-0.3V to +20V
Continuous Power Dissipation (TA = +70NC)
WLP (derate 23.8mW/NC above +70NC) ....................1500mW
Operating Temperature Range .......................... -40NC to +85NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -60NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Junction-to-Ambient Thermal Resistance (qJA) ..............42°C/W
Junction-to-Case Thermal Resistance (qJC) .....................7°C/W
Absolute Maximum Ratings
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Thermal resistance can be lowered with improved board design.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics (Note 1)
Electrical Characteristics
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and
TA = +25°C.) (Note 2)
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLIES
VCC Operating Range VCC 2.7 18 V
IN Operating Range VIN 2.7 18 V
VCC Supply Current ICC VIN = 3V 0.5 0.75 mA
IN Supply Current IIN
RCB = 40.2kω, no load 5.1 6.2 mA
RCB = 10kω, no load 1.4 1.8
VCC Default Undervoltage
Lockout VUVLO VCC rising 2.35 2.5 2.65 V
VCC Default Undervoltage-
Lockout Hysteresis VUVLO_HYS 0.1 V
REG Regulator Voltage VREG No load, VCC > 4V 3.15 3.35 3.55 V
UV Turn-On Threshold VUV_TH VUV rising 1.21 1.23 1.25 V
UV Turn-On Threshold
Hysteresis VUV_HYS VUV falling 0.1 V
OV Turn-On Threshold VOV_TH VOV rising 1.21 1.23 1.25 V
OV Turn-On Threshold
Hysteresis VOV_HYS VOV falling 0.1 V
EN Threshold VEN_TH VEN rising 0.95 1 1.05 V
EN Threshold Hysteresis VEN_HYS VEN falling 0.1 V
Electrical Characteristics (continued)
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and
TA = +25°C.) (Note 2)
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
OV, UV, EN Input Leakage
Current ILEAK VOV = VUV = VEN = 0 to 5V -1 +1 FA
CB Source Current ITHCB_NORM Power-on mode 12 FA
CURRENT LIMIT
Circuit-Breaker Accuracy
(Note 3) ICB,TH VIN = 12V RCB = 40.2kω 10.85 12.06 13.27 A
RCB = 10kω 2.7 3 3.3
Circuit-Breaker Accuracy
Deviation
RCB = 10kω to 40.2kω, compared to
nominal current-limit value -10 +10 %
Slow-Comparator Response
Time (Note 4) tSCD
0.6% overcurrent 2.7 ms
30% overcurrent 200 Fs
Maximum Current Limit During
Startup ILIM (see Figure 2) ICB,TH A
Fast-Comparator Threshold IFC_TH 1.5 x
ICB,TH A
Fast-Comparator Response
Time tFCD 200 ns
Minimum CB Voltage Reference
During Foldback (Note 5) VTHCB_MIN VIN - VOUT > 10V, RCB = 40.2kω 60 mV
Maximum CB Voltage
Reference During Foldback
(Note 5)
VTHCB_MAX VIN - VOUT < 2V, RCB = 40.2kω 240 mV
TIMING
Startup Maximum Time Duration tSU 43 48 53 ms
Autorestart Delay Time tRESTART 3.2 s
Time Delay Comparator High
Threshold VDLY_TH 1.85 2 2.15 V
Time Delay Pullup Current IDLY 1.6 1.9 2.2 FA
Output Short Detection at
Startup tSHORT 10.8 12 13.2 ms
MOSFET
Total On-Resistance RON
TA = +25°C 5.5 7.5 mω
TA = -40°C to +85°C 9
GATE Charge Current IGATE 4.5 5.7 7 FA
Electrical characteristics (continued)
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.3kω, and
TA = +25°C.) (Note 2)
Note 2: All devices are 100% production tested at TA = +25°C. Limits over temperature are guaranteed by design.
Note 3: 40.2kω is the maximum allowed external resistance value to be connected at CB pin to GND for safe operation. All devic-
es are tested with10kω, the parameter specified at RCB = 40.2kω is guaranteed by bench characterization and correla-
tion, with respect to the tested parameter at RCB = 10kω. The formula that describes the relationship between RCB and
the circuit-breaker current threshold is: ICB = RCB/3333.3.
Note 4: The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the
overcurrent condition, the faster the response time.
Note 5: Foldback is active during the startup phase so the internal power MOSFET operates within SOA.
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
OUTPUTS
FAULT, PG Output Low Voltage VOL Low-impedance state,
IFAULT = +5mA, IPG = +5mA 0.4 V
FAULT, PG Output High
Leakage Current IOH High-impedance state,
VFAULT = 16V, VPG = 16V 1FA
CURRENT REPORT
ISENSE Full-Scale Current IISENSE 2.64 mA
ISENSE Gain Ratio ISENSE/IOUT 220 FA/A
ISENSE Voltage Range VISENSE VIN = 12V 0 2.5 V
ISENSE Offset Error IISENSE_OFF
TA = +25°C -30 +30 FA
TA = -40°C to +85°C -50 +50
ISENSE Gain Error IISENSE_ERROR
TA = +25°C -2.5 -2.5 %
TA = -40°C to +85°C -4 +4
PG THRESHOLD
PG Threshold VPG Measured at VOUT 0.9 x
VIN V
PG Assertion Delay tPG From VOUT > VPG and
(VGATE - VIN) > 3V 12 16 20 ms
OUT to IN Short-Circuit
Detection Threshold VIOSHT Measured at VOUT 0.9 x
VIN
OUT Precharge Threshold VPC Measured at VOUT 0.5 x
VIN V
THERMAL SHUTDOWN
Thermal Shutdown TSD TJ rising +150 °C
Thermal-Shutdown Hysteresis TJ falling 20 °C
Typical Operating Characteristics
(VIN = VCC = 2.7V to 18V, TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and
TJ = +25°C.) (Note 3)
Maxim Integrated
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
IN SUPPLY CURRENT vs. TEMPERATURE
MAX15090 toc01
TEMPERATURE (°C)
IN SUPPLY CURRENT (mA)
603510-15
5.05
5.10
5.15
5.20
5.00
-40 85
VIN = 12V
ON-RESISTANCE vs. TEMPERATURE
MAX15090 toc04
TEMPERATURE (°C)
ON-RESISTANCE (mI)
603510-15
5
6
7
4
-40 85
VIN = 12V
ILOAD = 1A
CIRCUIT-BREAKER THRESHOLD
vs. CIRCUIT-BREAKER RESISTANCE
MAX15090 toc02
RCB (I)
CIRCUIT-BREAKER THRESHOLD (A)
3530252015
2
4
6
8
12
10
0
10 40
VIN = 12V
TURN-ON WAVEFORM
MAX15090 toc05
ILOAD = 6A
10ms/div
VUV
2V/div
VOUT
10V/div
VPG
10V/div
ILOAD
10A/div
0V
0V
0V
0A
CIRCUIT-BREAKER THRESHOLD
vs. TEMPERATURE
MAX15090 toc03
TEMPERATURE (°C)
CIRCUIT-BREAKER THRESHOLD (A)
603510-15
2
4
6
8
10
12
14
0
-40 85
VIN = 12V RCB = 40kI
RCB = 30kI
RCB = 20kI
RCB = 10kI
NORMAL TURN-OFF WAVEFORM
MAX15090 toc06
ILOAD = 6A
10ms/div
VUV
2V/div
VOUT
10V/div
VPG
10V/div
ILOAD
10A/div
0V
0V
0V
0A
Typical Operating Characteristics (continued)
(VIN = VCC = 2.7V to 18V, TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and
TJ = +25°C.) (Note 3)
Maxim Integrated
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
FAULT-SHUTDOWN
WAVEFORM OVERLOAD (SLOW TRIP)
MAX15090 toc07
1ms/div
VOUT
10V/div
VPG
10V/div
VFAULT
10V/div
ILOAD
10A/div
0V
0A
0V
0V
PG ASSERTION DELAY
MAX15090 toc10
10ms/div
VUV
1V/div
VOUT
5V/div
VPG
5V/div
0V
0V
0V
FAULT-SHUTDOWN
WAVEFORM OVERLOAD (SHORT CIRCUIT)
MAX15090 toc08
1ms/div
VOUT
10V/div
VPG
10V/div
VFAULT
10V/div
ILOAD
10A/div
0V
0A
0V
0V
AUTORETRY FUNCTIONALITY
MAX15090 toc11
1s/div
VOUT
10V/div
VPG
10V/div
VFAULT
10V/div
ILOAD
10A/div
0V
0A
0V
0V
UV RISING/FALLING THRESHOLD
VOLTAGE vs. TEMPERATURE
MAX15090 toc09
TEMPERATURE (°C)
UV RISING/FALLING THRESHOLD (A)
603510-15
1.20
1.25
1.30
1.35
1.15
-40 85
VIN = 12V
VUV RISING
VUV FALLING
CIRCUIT-BREAKER THRESHOLD TIME
vs. OVERCURRENT
MAX15090 toc12
OVERCURRENT (%)
CIRCUIT-BREAKER THRESHOD TIME (ms)
252015105
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
03
0
VIN = 12V
Bump Description
Bump Conguration
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
BUMP NAME FUNCTION
A1 ISENSE Current-Sense Output. The ISENSE output sources a current that is proportional to the output current.
Connect a resistor between ISENSE and GND to produce a scaled voltage.
A2 VCC
Power-Supply Input. Connect VCC to a voltage between 2.7V and 18V. Connect a Schottky diode (or 6ω
resistor) from IN to VCC and a 1FF bypass capacitor to GND to guarantee full operation in the event VIN
collapses during a strong short from OUT to GND.
A3, A5, B3,
B5, C3,
C5, D5
IN
Supply Voltage Input. IN is connected to the drain of the internal 6mω MOSFET. Bypass IN with a
transient voltage-suppressor diode to GND for clamping inductive kick transients in the case of fast
output short-circuit to GND.
A4, B4, B6,
C4, C6,
D4, D6
OUT Load Output. Source of the internal power MOSFET.
TOP VIEW
(BUMPS SIDE DOWN)
1234567
B
A
C
D
WLP
(2.07mm x 3.53mm)
MAX15090
MAX15090A
VCC
GND
GND
UV
OUT
OUT
OUT
OUT
ISENSE
CB
GND
REG
IN
IN
IN
IN
GATE
OUT
OUT
OUT
CDLY
PG
IN
IN
IN
OV
FAULT
EN
+
Bump Description (continued)
Detailed Description
Enable Logic and Undervoltage/
Overvoltage-Lockout Threshold
The MAX15090/MAX15090A ICs enable the output, as
shown in Table 1. The devices are ready to drive the out-
put when the VCC supply rises above the VUVLO thresh-
old. The devices turn on the output when VCC > VUVLO,
VUV is high (VUV > 1.23V) and VOV is low (VOV < 1.23V).
The devices turn off the output when VUV falls below
(1.23V - VUV_HYS) or VOV rises above 1.23V. An external
resistive divider from IN to UV, OV, and ground provide
the flexibility to set the undervoltage/overvoltage-lockout
threshold to any desired level between VUVLO and 18V.
See Figure 1 and the Setting the Undervoltage Threshold
and Setting the Overvoltage Threshold sections.
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
BUMP NAME FUNCTION
A6 GATE
GATE of Internal MOSFET. During startup, a 5.7FA current is sourced to enhance the internal MOSFET
with a 10V/ms slew rate. Connect an external capacitance from GATE to GND to reduce the output slew
rate during startup.
A7 CDLY
Enable Timer Input. Connect a capacitor between CDLY and GND to set a 1s/FF duration timeout
delay. The EN input has to be pulled low before the timeout delay elapses, to prevent internal MOSFET
shutdown after power-up.
B1 CB
Current-Limit Threshold Set. Connect a resistor from CB to GND to set the circuit-breaker threshold. Maximum
value of 40.2kω can be accepted for safe operation. Having the CB pin connected to GND sets the circuit-
breaker threshold at 0A.
B2, C1, C2 GND Ground
B7 EN
Enable Input. Externally pulled up to logic-high state through a resistor normally connected to REG. The
EN input must be pulled down (for at least 1ms) by the external circuit before a programmable timeout
delay has elapsed, otherwise a shutdown occurs. The timeout timer starts counting when the internal
MOSFET is turned on. Connect a capacitor between CDLY and GND to program the duration of the
timeout delay. Connect EN to GND to disable this feature.
C7 FAULT Fault Status Output. FAULT is an open-drain, active-low output. FAULT asserts low when an overcurrent
or overtemperature condition triggers a shutdown. FAULT is disabled during startup.
D1 REG Internal Regulator Output. Bypass to ground with a 1FF capacitor. Do not power external circuitry using
the REG output (except a resistor > 50kω connected from REG to EN).
D2 UV Active-High Enable Comparator Input. Pulling UV high enables the internal MOSFET to turn on. UV also
sets the undervoltage threshold. See the Setting the Undervoltage Threshold section.
D3 OV
Overvoltage Enable Input. Pull OV high to turn off the internal MOSFET. Connect OV to an external
resistive divider to set the overvoltage-disable threshold. See the Setting the Overvoltage Threshold
section.
D7 PG Power-Good Output. PG is an open-drain, active-high output. PG pulls low until the internal power
MOSFET is fully enhanced.
Startup
Once the device output is enabled, the device provides
controlled application of power to the load. The voltage at
OUT begins to rise at approximately 10V/ms default until
the programmed circuit-breaker current level is reached,
while the devices actively limit the inrush current at the
circuit-breaker setting. An external capacitor connected
to the GATE pin allows the user to program the slew rate
to a value lower than the default. The inrush current can
be pro grammed by selecting the appropriate value of
RCB. During startup, a foldback current limit is active to
protect the internal MOSFET to operate within the SOA
(Figure 2).
An internal 50ms timer starts counting when the devices
enter the startup phase. The devices complete the start-
up phase and enter normal operation mode if the voltage
at OUT rises above the precharge threshold (0.9 x VIN)
and (VGATE - VOUT) > 3V. An open-drain power-good
output (PG) goes high-impedance 16ms after the startup
successfully completes.
The thermal-protection circuit is always active and
the internal MOSFET immediately turned off when the
thermal-shutdown threshold condition is reached.
VariableSpeed/BiLevel Fault Protection
VariableSpeed/BiLevel fault protection incorporates com-
parators with different thresholds and response times to
monitor the load current (Figure 3). Protection is provided
in normal operation (after the startup period has expired)
by discharging the MOSFET gate in response to a fault
condition. During a fault condition, the MAX15090A enters
autoretry mode, while the MAX15090 latches off (see the
Autoretry and Latch-Off Fault Management section).
Enable Input (EN)
After a startup phase is successfully completed and
the power-good output asserted, the EN input has to
be pulled low (for at least 1ms) before the tDLY delay
elapses. If the EN input is not pulled low before the tDLY
elapses, then the devices turn off the internal MOSFET
immediately and a new cycle is required for entering
power-up mode. Connect a capacitor between CDLY
and GND to set a 1s/FF duration timeout delay. If this
function in is not implemented, connect EN to GND for
proper operation.
Table 1. Output Enable Truth Table
X = Don’t care.
VUV_TH and VOV_TH = 1.23V (typ).
Figure 1. Undervoltage/Overvoltage-Threshold Setting
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
POWER SUPPLY PRECISION ANALOG INPUTS OUT
VCC UV OV
VCC > VUVLO VUV > VUV_TH VOV < VOV_TH On
VCC < VUVLO X X Off
X VUV < (VUV_TH - VUV_HYS) X Off
X X VOV > VOV_TH Off
MAX15090
MAX15090A
IN
UV
OV
GND
1.23V
R1
R2
R3
CONTROL
LOGIC
Figure 2. Startup Inrush Current Foldback Characteristics
Figure 3. VariableSpeed/BiLevel Response
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MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
IINRUSH
2V 10V
6A
1.5A
1A
0.25A VIN - VOUT
RCB = 40.2kI
RCB = 10kI
2.7ms
200ns
TURN-OFF TIME
OUT CURRENT
SLOW COMPARATOR
FAST COMPARATOR
0.6%
OVERCURRENT
30%
OVERCURRENT
50%
OVERCURRENT
200µs
Charge Pump
An integrated charge pump provides the gate-drive volt-
age for the internal power MOSFET. The charge pump
generates the proper gate drive voltage above VIN to
fully enhance the internal power MOSFET and guarantee
low RON operation during normal state conditions.
During startup, the internal charge pump drives the GATE
of the MOSFET with a fixed 5.7FA current to enhance the
internal MOSFET with 10V/ms slew rate (typ). Connect an
external capacitor (CGATE) from GATE to GND to reduce
the output slew rate during startup. CGATE can be
calculated according to the following formula:
CGATE = (IGATE x Dt)/DVGATE
where IGATE is 5.7FA (typ), Dt is the desired slew-rate
time, and DVGATE is the voltage at the gate of the internal
MOSFET at turn-on.
The slew rate of the OUT pin during startup can be
controlled by IGATE/CGATE under light-load driving
conditions, or by the limited inrush current and the exter-
nal capacitive load, whichever is less.
(DVOUT/Dt) = ILIM/CLOAD
Circuit-Breaker Comparator
and Current Limit
The current that passes through the internal power
MOSFET is com pared to a circuit-breaker threshold. An
external resistor between CB and GND sets this thresh-
old according to the following formula:
ICB = RCB/3333.3
where ICB is in amps and RCB (the resistor between CB
and GND) is in ohms.
The circuit-breaker comparator is designed so the load
current can exceed the threshold for some amount of
time before tripping. The time delay varies inversely with
the overdrive above the threshold. The greater the over-
current condition, the faster the response time, allow ing
the devices to tolerate load transients and noise near the
circuit-breaker threshold. The maximum allowed external
resistor value is 40.2kω, which corresponds to a 12A
CB threshold setting. Programming the CB threshold to
a value higher than 12A could cause unsafe operating
conditions, resulting in damage to the devices.
The devices also feature catastrophic short-circuit
protec tion. During normal operation, if OUT is shorted
directly to GND, a fast protection circuit forces the gate
of the internal MOSFET to discharge quickly and discon-
nect the output from the input.
Autoretry and Latch-Off Fault Management
During a fault condition, the devices turn off the inter nal
MOSFET, disconnecting the output from the input. The
MAX15090A enters autoretry mode and restarts after
a tRESTART time delay has elapsed. The MAX15090
latches off and remains off until the enable logic is cycled
off and on after a tRESTART delay. The delay prevents
the latch-off device to restart and operate with an unsafe
power-dissipation duty cycle.
Fault-Status Output (FAULT)
FAULT is an open-drain output that asserts low when
a current-limit or an overtemperature-fault shutdown
occurs. FAULT remains low until the next startup cycle.
FAULT is capable of sinking up to 5mA current when
asserted.
Power-Good (PG) Delay
The devices feature an open-drain, power-good output
that asserts after a tPG delay, indicating that the OUT
voltage has reached (0.9 x VIN) voltage and (VGATE -
VOUT) > 3V.
Internal Regulator Output (REG)
The devices include a linear regulator that outputs 3.3V
at REG. REG provides power to the internal circuit blocks
of the devices and must not be loaded externally (except
for a resistor > 50kω connected from REG to EN). REG
requires at least a 1FF capacitor to ground for proper
operation.
Current Report Output (ISENSE)
The ISENSE pin is the output of an accurate current-
sense amplifier and provides a source current that is pro-
portional to the load current flowing into the main switch.
The factory-trimmed current ratio is set to 220FA/A. This
produces a scaled voltage by connecting a resistor
between ISENSE and ground. This voltage signal then
goes to an ADC and provides digitized information of the
current supplied to the powered system.
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11
MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
Thermal Protection
The devices enter a thermal-shutdown mode in the event
of overheating caused by excessive power dissipation
or high ambient temperature. When the junction tem-
perature exceeds TJ = +150NC (typ), the internal thermal-
protection circuitry turns off the internal power MOSFET.
The devices recover from thermal-shutdown mode once
the junction temperature drops by 20NC (typ).
IN-to-OUT Short-Circuit Protection
At startup, after all the input conditions are satisfied (UV,
OV, VUVLO), the devices immediately check for an IN-to-
OUT short-circuit fault. If VOUT is greater than 90% of
VIN, the internal MOSFET cannot be turned on so FAULT
is asserted and the MAX15090A enters autoretry mode in
3.2s, while the MAX15090 latches off.
If VOUT is lower than 90% of VIN but greater than 50%
of VIN, the internal MOSFET still cannot be turned on. No
fault is asserted and the MOSFET can turn on as soon as
VOUT is lower than 50% of VIN.
Applications Information
Setting the Undervoltage Threshold
The devices feature an independent on/off control (UV)
for the internal MOSFET. The devices operate with a 2.7V
to 18V input voltage range and have a default 2.5V (typ)
undervoltage-lockout threshold.
The internal MOSFET remains off as long as VCC < 2.5V
or VUV < VUV_TH. The undervoltage-lockout threshold is
pro grammable using a resistive divider from IN to UV,
OV, and GND (Figure 1). When VCC is greater than 2.7V
and VUV exceeds the 1.23V (typ) threshold, the internal
MOSFET turns on and goes into normal operation. Use
the following equation to calculate the resistor values for
the desired undervoltage threshold:
( )
IN
UV_TH
V
R1 1 R2 R3
V−
= ×+
where VIN is the desired turn-on voltage for the output
and VUV_TH is 1.23V. R1 and (R2 + R3) create a resistive
divider from IN to UV. During normal operating condi-
tions, VUV must remain above its 1.23V (typ) threshold.
If VUV falls 100mV (VUV_HYS) below the threshold, the
internal MOSFET turns off, disconnecting the load from
the input.
Setting the Overvoltage Threshold
The devices also feature an independent overvoltage-
enable control (OV) for the internal MOSFET.
When VOV exceeds the 1.23V (typ) threshold, the internal
MOSFET turns off.
The overvoltage-lockout threshold is pro grammable
using a resistive divider from IN to UV, OV, and GND
(Figure 1). Use the following equation to calculate the
resistor values for the desired overvoltage threshold:
( )
IN
OV_TH
V
R1 R2 1 R3
V−
+= ×
where VIN is the desired turn-off voltage for the output
and VOV_TH is 1.23V. R1 and (R2 + R3) create a resistive
divider from IN to OV. During normal operating condi-
tions, VOV must remain below its 1.23V (typ) threshold.
If VOV rises above the VOV_TH threshold, the internal
MOSFET turns off and disconnects the load from the
input.
Wafer-Level Packaging (WLP)
Applications Information
For the latest application details on WLP construction,
dimensions, tape carrier information, PCB techniques,
bump-pad layout, recommended reflow temperature
profile, as well as the latest information on reliability test-
ing results, refer to Application Note 1891: Wafer-Level
Packaging (WLP) Applications Information, available at
www.maximintegrated.com/wlp.
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│
12
MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
Functional Diagram
www.maximintegrated.com Maxim Integrated
│
13
MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
MAX15090
MAX15090A
UV
OV
CDLY
1.23V
2V
1.9µA
TEMP
SENSE
STARTUP
CONTROL AND
FOLDBACK
CONTROL
LOGIC 2 x ISLEW
IPD
IGATE
IREF
MS1
VCC
GATE
IN OUT
ISENSE
FAULT
PG
12µA
CB
GATE_OK
REFERENCE
GENERATOR
REGEN
LDO
REGULATOR
DLY
CTRL
ILOAD/4545
CB_SLOW_COMP
FAST_COMP
MPOW
CHARGE
PUMP
0.9 x VIN
VCC
1.23V
GATE
ILOAD
GND
Ordering Information
+Denotes a lead(Pb)-free/RoHS-compliant package.
Chip Information
PROCESS: BiCMOS
Package Information
For the latest package outline information and land patterns (foot-
prints), go to www.maximintegrated.com/packages. Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but the
drawing pertains to the package regardless of RoHS status.
Typical Application Circuit
www.maximintegrated.com Maxim Integrated
│
14
MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
PART TEMP
RANGE
PIN-
PACKAGE
FAULT
MANAGEMENT
MAX15090EWI+ -40NC to
+85NC28 WLP Latched Off
MAX15090AEWI+ -40NC to
+85NC28 WLP Autoretry
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND PATTERN
NO.
28 WLP W282B3Z+1 21-0577
Refer to
Application note
1891
MAX15090
MAX15090A
RIN
RCB
RPG
CIN
TVS
IN
VCC
UV
12V
OV
EN
GND
CB
REG
RFAULT
R1
R2
R3
CREG
GATE
OUT
PG
FAULT
ISENSE
DC-DC
REGULATOR
3.3V OUTPUT
A/D
CONVERTER
CGATE
CDLY
CCDLY
RISENSE
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Revision History
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc. © 2015 Maxim Integrated Products, Inc.
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15
MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
REVISION
NUMBER
REVISION
DATE DESCRIPTION PAGES
CHANGED
0 9/12 Initial release —
1 12/12 Removed future product designation for the MAX15090A version 14
2 9/13 Corrected errors in TOC 6 6
3 1/15 Updated Benefits and Features section 1
