SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCX71G BG BCX71H BH BCX71J BJ BCX71K BK BCX71GR CG BCX71HR 6P BCX71JR J8 BCX71KR CK ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base - Emitter Voltage VBE Static Forward Current Transfer Ratio BCX71G hFE BCX71H BCX71J BCX71K Transition Frequency fT Emitter-Base Capacitance Cebo Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff CONDITIONS. -45 V ICEO=-2mA -5 V IEBO=-1A A nA VCES =-45V VCES =-45V ,Tamb=150oC -20 nA VEBO =-4V -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA PARAMETER SYMBOL VALUE UNIT -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Collector-Base Voltage VCES -45 V Collector-Emitter Voltage VCEO -45 V -0.6 -0.55 -0.65 -0.72 -0.75 V V V IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 C 140 170 30 180 80 200 250 40 250 100 270 350 100 380 110 340 500 MAX. E UNIT 120 60 TYP. BCX71 310 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 460 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 630 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 180 MHz 11 2 35 50 85 400 80 480 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 220 pF VEBO= -0.5V,f =1MHz pF VCBO = -10V, f =1MHz 6 dB IC =- 0.2mA, VCE =- 5V RG=2K, f=1KHz f=200Hz 150 800 *Measured under pulsed conditions. Pulse width=300s. Duty cycle ns ns ns ns ns ns -IC : IB1 : - IB2 =10:1:1mA R1=R2=5K VBB =-3.6V, RL=990 B SOT23 ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25C PTOT Operating and Storage Temperature Range Tj:Tstg SWITCHING CIRCUIT +VBB R2 VCC (-10V) RL 1s R1 -10V IC =-10mA, VCE = -5V f = 100MHz 6 C tr <5nsec Mark/Space ratio < 0.01 ZS = 50 50 BAY63 tr < 5nsec Zin >100k Oscilloscope FOUR TERMINAL NETWORK DATA (IC=2mA, VCE=5V, f=1kHz) h11e h12e h21e h22e hFE Group G hFE Group F hFE Group J hFE Group K Min. Typ. Max. Min. Typ Max. Min. Typ Max. Min. Typ Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 K 1.5 2 2 3 10-4 200 260 330 520 18 30 24 50 30 60 50 100 s Spice parameter data is available upon request for this device PAGE NO SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCX71G BG BCX71H BH BCX71J BJ BCX71K BK BCX71GR CG BCX71HR 6P BCX71JR J8 BCX71KR CK ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base - Emitter Voltage VBE Static Forward Current Transfer Ratio BCX71G hFE BCX71H BCX71J BCX71K Transition Frequency fT Emitter-Base Capacitance Cebo Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff CONDITIONS. -45 V ICEO=-2mA -5 V IEBO=-1A A nA VCES =-45V VCES =-45V ,Tamb=150oC -20 nA VEBO =-4V -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA PARAMETER SYMBOL VALUE UNIT -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Collector-Base Voltage VCES -45 V Collector-Emitter Voltage VCEO -45 V -0.6 -0.55 -0.65 -0.72 -0.75 V V V IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 C 140 170 30 180 80 200 250 40 250 100 270 350 100 380 110 340 500 MAX. E UNIT 120 60 TYP. BCX71 310 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 460 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 630 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 180 MHz 11 2 35 50 85 400 80 480 IC=-10A, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 220 pF VEBO= -0.5V,f =1MHz pF VCBO = -10V, f =1MHz 6 dB IC =- 0.2mA, VCE =- 5V RG=2K, f=1KHz f=200Hz 150 800 *Measured under pulsed conditions. Pulse width=300s. Duty cycle ns ns ns ns ns ns -IC : IB1 : - IB2 =10:1:1mA R1=R2=5K VBB =-3.6V, RL=990 B SOT23 ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25C PTOT Operating and Storage Temperature Range Tj:Tstg SWITCHING CIRCUIT +VBB R2 VCC (-10V) RL 1s R1 -10V IC =-10mA, VCE = -5V f = 100MHz 6 C tr <5nsec Mark/Space ratio < 0.01 ZS = 50 50 BAY63 tr < 5nsec Zin >100k Oscilloscope FOUR TERMINAL NETWORK DATA (IC=2mA, VCE=5V, f=1kHz) h11e h12e h21e h22e hFE Group G hFE Group F hFE Group J hFE Group K Min. Typ. Max. Min. Typ Max. Min. Typ Max. Min. Typ Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 K 1.5 2 2 3 10-4 200 260 330 520 18 30 24 50 30 60 50 100 s Spice parameter data is available upon request for this device PAGE NO