IINANERSIL ID100, ID101 Low Leakage Monolithic Dual Diode FEATURES PIN * In = 0-1 pA (typical) CONFIGURATIONS BVa > WV C; = 0.75 pF (typical) 10.71 TO-78 GENERAL DESCRIPTION The ID100 and 1D101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents. Applications include interstage coupling with reverse isolation, signal clipping and clamping and protec- tion of ultra low leakage FET differential dual and opera- tional amplifiers. Aalj Ko - ABSOLUTE MAXIMUM RATINGS sy (@ 25C unless otherwise noted) Maximum Temperatures Storage Temperature -65C to +200C Operating hn on Temperature +200C * These leads are not to be tied together nor connected to the circuit in any way. Lead Temperature (soldering, 10sec. time limit) +300C y way Maximum Power Dissipation CHIP > Device Dissipation @ Free Air Temperature 300 mw TOPOGRAPHY Linear Derating 1.7mWPC Maximum Voltages & Currents 1 7 + .21.-{ 4000 Vp Reverse Voltage 30 V a CATHODE #1 vale ois | gl Weg | SAUS0E sxe. oes D,D, Diode to Diode Voitage +50V 019 if }$ ANODE #2 . . t TYP. 2PLACES .0030 DIAMETER 1 Forward Current 20 mA | 0040 ANODE #1 Ip Reverse Current 100 pA 2 6 ORDERING INFORMATION TO078 to71 WAFER CHIP 10100 10101 1D100/w 1D101/D ELECTRICAL CHARACTERISTICS (@ 25C uniess otherwise noted) 10100, 1D101 PARAMETER MIN. TYP. MAX. UNITS TEST CONDITIONS Ve Forward Voltage Drop 0.8 1.1 Vv Ip =10mA BVR Reverse Breakdown Voltage 30 Vv Ip = 1A Ip : Reverse Leakage Current 0.1 pA VRzlVv.Ta= 25C 2.0 10 pA Vaz 10V,T, = 25C 10 nA Vg = 10V, Ty = 125C NR, - Ira! Differential Leakage Current 3 pA Va=10V Cr Total Reverse Capacitance 0.75 1 pF . Vp =10V, f= 1MHz 1-11iD100, ID101 TYPICAL CHARACTERISTICS OF 119100/1D101 REVERSE CURRENT-VOLTAGE tp (pA) yn BW a& OH SW o Vatv) INTERSIL CAPACITANCE vs. VOLTAGE pF Va lv) FORWARD CURRENT-VOLTAGE 100 mA 10 mA + 1mA 100 pA 10 pA TA 100 nA 0 0.1 0.2 0.3 0.4 0.5 0.6 0.70.8 0.9 1.01.1 1.2 1.3 1.4 Vp VI