NPN Transistors ia SATURATED SWITCHES (Continued) VCES" | y, v 'ces* v v ic c f t Type Case | Vego CEO EBO | icgo . VcB hee lc Vcg| CESAT) BE(SAT) (mA} ob T ic (off) Test Process No. | Style | (Vv) v) Vy Fina) wy | Min Max ima yy MM) & W) @ tc, | (PFE) (MHz) ay! '5) | conditions | No. . Min Min Max Min Max (Ip =)} Max | Min Max Max Min Max 10 2N3009 TO-52 40 15 4 500* 20 18 300 1 0.18 0.75 095 30 5 350 30 25 3 22 ~ 25 100 0.5 0.28 1.2 100 30 120 30 0.4 05 17 300 2n3013 | To-52! 40 18 5 zoox 20 | 15 300 018 8.75 0.95 30 5 | 350 30 | 25 3 22 25 100 0.5 0.28 1.2 100 30 120 30 04 0.5 1.7 300 2N3646 Same as PN3646, see below for explanation 22 PN3646 TO-92 40* 15 5 500* 20 18 300 1 0.2 0.75 0.95 30 5 350 30 28 3 22 (92) 20 100 05 0.28 1.2 100 30 120 30 0.4 0.5 1.7 300 2N3015 TO-39- 60 30 5 200 30 10 300 0.7 04 1.2 150 8 250 50 60 5&6 25 30 120 150 10 1.0 1.6 500 2N3252 TO-39 60 30 5 500 40 25 1A 5 0.3 1.0 150 12 | 200 50 78 7 25 30 90 500 1 0.5 0.7 1.3 500 30 150 1 1.0 18 1A . 2N3253 TO-39 75 40 5 500 60 20 750 5 0.35 1.0 150 42 | 175 50 70 7 25 25 75 3756 1 06 07 1.3 500 25 450 1 1.2 1.8 1A 2N3444 TO-39 80 50 5 500 60 15 1A 5 0.35 1.0 150 12 { 150 50 70 7 25 20 60 500 1 0.6 1.3 5G0 20 150 1 1.2 18 1A 2N3724 TO-39 50 30 6 V7 pA 40 30 1A 5 0.32 1.1 300 300 50 60 ? 25 25 800 2 500 42 35 500 1 0.42 09 12 40 300 1 0.65 15 goo 60 150 100 1 30 10 1 0.75 1.7 1A 2N3724A TO-39 50 30 6 500 40 25 1.54 5 0.32 11 300 12 | 300 50 50 8 25 30 1A 5 500 30 800 2 0.42 1.2 35 500 1 40 300 1 0.65 1.3 800 60 7 60 150 100 1 30 10 1 0.75 1.4 1A 2N3725 TO-39 80 50 6 1.7 uA 60 25 1A 5 0.4 Vd 300 10 | 300 50 60 7 25 20 800 2 0.52 0.9 1.2 500 35 500 1 40 300 1 08 15 800 60 150 400 1 1A 30 10 1 0.95 17