MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die Max MMPQ2907 1,000 8.0 125 240 Units mW mW/C C/W C/W C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation MMPQ2907, Rev A (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 A, IE = 0 60 V IE = 10 A, IC = 0 5.0 IEBO Emitter Cutoff Current VEB = 30 V 50 nA ICBO Collector Cutoff Current VCB = 30 V 50 nA V ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 300 mA, VCE = 10 V IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 300 mA, IB = 30 mA IC = 150 mA, IB = 15 mA* IC = 300 mA, IB = 30 mA Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage VCE(sat) VBE(sat) 75 100 30 50 300 0.4 1.6 1.3 2.6 V V V V *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Pulsed Current Gain vs Collector Current VCE = 5V = 10 0.4 125 C 0.3 300 200 25 C 100 - 40 C 0 0.1 Collector-Emitter Saturation Voltage vs Collector Current 0.5 500 400 VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0.3 25 C 0.2 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 125 C 0.1 300 0 - 40 C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) MMPQ2907 PNP General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 = 10 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT - BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 125 C 0.4 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Input and Output Capacitance vs Reverse Bias Voltage 100 20 V CB = 35V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) VCE = 5V 0.2 Collector-Cutoff Current vs. Ambient Temperature 10 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) 16 12 C ib 8 4 0 0.1 125 Switching Times vs Collector Current 250 I B1 = I B2 = 200 1 10 REVERSE BIAS VOLTAGE (V) 500 Ic I B1 = I B2 = 10 400 50 Ic 10 TIME (nS) V cc = 15 V ts 150 100 tr tf 50 300 200 t off 100 td 0 10 C ob Turn On and Turn Off Times vs Collector Current V cc = 15 V TIME (nS) 25 C 0.6 100 I C - COLLECTOR CURRENT (mA) t on 1000 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 MMPQ2907 PNP General Purpose Amplifier (continued) (continued) Rise Time vs Collector and Turn On Base Currents Power Dissipation vs Ambient Temperature 1 50 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) Typical Characteristics 20 SOT-223 0.75 10 t r = 15 V 5 30 ns 0.5 SOT-23 0.25 2 60 ns 1 10 TO-92 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 o TEMPERATURE ( C) Test Circuits 30 V 200 W W 1.0 KW 0 - 16 V 50 W 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit - 6.0 V 15 V 1 KW W 37 W W 1.0 KW 0 - 30 V 50 W 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit 125 150 MMPQ2907 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1