MMPQ2907
Symbol Parameter Value Units
VCEO
Collector-Emitter Voltage 40 V
VCBO Collec t or-Base Voltage 60 V
VEBO Emi tter-Bas e V oltage 5.0 V
ICCollect or Current - Cont i nuous 600 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMPQ2907
SOIC-16 C1C1C2C2C3C3C4C4
E1 B1E2B2E3 B3E4B4
pin #1
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMPQ2907
PDTotal Device Dissipation
Derate above 25°C1,000
8.0 mW
mW/°C
RθJA Thermal Resistance, J unc t ion t o A m bient
Effec t ive 4 Die
Each Die 125
240
°C/W
°C/W
°C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation MMPQ2907, Rev A
MMPQ2907
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
*Pulse Test: Pulse Widt h ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Coll ector-Emitt er Break down
Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CBO Coll ector-Bas e Break down Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitt er-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IEBO Emitter Cutoff Current VEB = 30 V 50 nA
ICBO Collector Cutoff Current VCB = 30 V 50 nA
hFE DC Current Gain IC = 10 mA , VCE = 10 V
IC = 150 mA, V CE = 10 V*
IC = 300 mA, V CE = 10 V
IC = 500 mA, V CE = 10 V*
75
100
30
50
300
VCE(sat)Collector-Emitter Saturation
Voltage* IC = 150 mA, IB = 15 m A
IC = 300 mA, IB = 30 mA 0.4
1.6 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
IC = 300 mA, IB = 30 mA 1.3
2.6 V
V
PNP (Is=650.6E-18 Xti=3 Eg=1.11 V af=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 T r=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
v s Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Coll ector-E mitter Saturation
Voltage vs Collector Current
110100500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
- COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β
ββ
β= 10
25 °C
- 40 ºC
125 ºC
MMPQ2907
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Volt age vs Collect or Curre nt
1 10 100 500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 ºC
125 ºC
β= 10
Base Emitter ON Voltage vs
Collector C urrent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 ºC
125 ºC
Collector-Cutoff Current
vs. Ambient Temperature
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
º
V = 35V
CB
Input and Output Capacitance
vs Reverse Bias Voltage
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cob
C
ib
Switching Times
vs Collector Current
10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Turn On and Turn Off Times
vs Collector Current
10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
MMPQ2907
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Rise Time vs Collector
and Turn On Base Curre nt s
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TURN 0N BASE CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
Power Dissipation vs
Ambi ent Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated T urn-Off Switching T ime T est Circuit
1.0 KWW
WW
W
- 6.0 V
15 V
1.0 KWW
WW
W
- 30 V
0
££
££
£ 200ns
££
££
£ 200ns
- 16 V
0
50 WW
WW
W
200 WW
WW
W
1 KWW
WW
W37 WW
WW
W
50 WW
WW
W
30 V
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Definition of Terms
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Advance Information
Preliminary
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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The datasheet is printed for reference information only.
Formative or
In Design
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