1/13March, 21 2003
PD55025
PD55025S
RF POWER TRANSISTORS
The Ldm oST
Plastic FAM ILY
N-CHANNEL ENHA NCEMENT-MODE LATERA L
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 25 W wit h 14.5 dB gain @ 500 MHz /
12.5 V
NEW RF PLASTIC PAC KAGE
DESCRIPTION
The PD55025 is a common source N-Channel,
enhancement -mode lateral Field-Eff ect RF power
transistor. It is designe d for high gain, broad band
commercial and industrial applications. It operates
at 12 V in c ommon source mode at f requencies of
up to 1 GHz. P D55025 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55025’s
superior linearity performance makes it an ideal
solution for car mobi le radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, hi gh power SM D package. I t has b een
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55025 BRANDING
PD55025
PowerSO-10RF
(straight lead)
ORDER CODE
PD55025S BRANDING
PD55025S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ± 20 V
IDDrain Current 7 A
PDISS Power Dissipation (@ Tc = 70°C) 79 W
Tj Max. Operating Junction Temperature 165 °C
TSTG Storage Temperature -65 to +150 °C
THE RMAL DA TA
Rth(j-c) Junction -Case Thermal Resistance 1.2 °C/W
Mounting reco mmendation s are available in
www.st.com/rf/ (loo k for application note AN 12 94)
PD55025 - PD55025S
2/13
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC
DYNAMIC
Symbo l Test Conditions Min. Ty p. Max. Unit
IDSS VGS = 0 V VDS = 28 V 1µA
IGSS VGS = 20 V VDS = 0 V 1µA
VGS(Q) VDS = 28 V ID = 100 mA 2.0 5.0 V
VDS(ON) VGS = 10 V ID = 3 A 0.7 0.8 V
GFS VDS = 10 V ID = 3 A 2.5 mho
CISS VGS = 0 V VDS = 12.5 V f = 1 MHz 86 pF
COSS VGS = 0 V VDS = 12.5 V f = 1 MHz 76 pF
CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz 5.8 pF
Symbol Test Conditions Min. Typ. Max. Unit
Pout VDD = 12.5 V IDQ = 200 mA f = 500 MHz 25 W
GPVDD = 12.5 V IDQ = 200 mA POUT = 25 W f = 500 MHz 14.5 dB
ηDVDD = 12.5 V IDQ = 200 mA POUT = 25 W f = 500 MHz 50 %
Load
mismatch VDD = 12.5 V IDQ = 200 mA POUT = 25 W f = 500 MHz
ALL PHASE ANGLES 20:1 VSWR
PIN CONNECTION
GATE
SOURCE
DRAIN
SC15200
PD55025S
FREQ. MHz ZIN ()Z
DL()
175 3.20 - j 4.41 1.56 + j 2.14
480 1.01 - j 1.67 1.06 + j 0.22
500 0.93 - j 1.53 1.12 + j 0.20
520 0.88 - j 1.98 1.07 + j 0.83
Ty pi cal Input
Impedance Typical Drain
Load Im pedance
G
D
S
ZDL
Zin
SC13140
IMPEDANCE DATA
3/13
PD55025 - PD55025S
TYPICAL PERFORMANCE
(PD55025S)
Capacitance vs . Supply Voltage
1
10
100
1000
0 4 8 1216202428
Vds (V)
C (pF)
f = 1 MHz
Crss
Coss
Ciss
Drain Current vs Gate-Source Vol tage
0
1
2
3
4
5
6
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Vgs (V)
Id (A)
Vds = 10 V
Gate-Source Voltage vs Case Temperature
0.94
0.96
0.98
1.00
1.02
1.04
-25 0 25 50 75 100
Vgs (V)
Id (A)
Vds = 10 V Id = .5 A
Id = 1 A
Id = 2 A
Id = 3 A
Id = 4 A
Id = 5 A
Output Power vs Input Power
0
5
10
15
20
25
30
35
40
45
0.00 1.00 2.00 3.00 4.00 5.00 6.00
Pin (W )
Pout (W)
Vdd = 12.5 V
Id
q
= 200 mA
520 MHz
500 MHz
480 MHz
Output Power vs Input Power
0
5
10
15
20
25
30
35
40
45
0123456
Pin (W)
Pout (W)
f = 520 MHz
Idq = 20 0 mA
Vdd = 12. 5 V
Vdd = 13.8 V
Po w e r G a in vs Ou tp u t Pow e r
0
2
4
6
8
10
12
14
16
18
0 1020304050
Pout (W)
Gp (dB)
Vdd = 12.5 V
Idq = 200 m A
520 MHz 500 MHz
480 MHz
PD55025 - PD55025S
4/13
TYPICAL PERFORMANCE
(PD55025S)
Drain Efficiency vs Out put Power
0
10
20
30
40
50
60
70
0 1020304050
Pout (W)
Nd (%)
Vdd = 12.5 V
Idq = 200 mA
500 M Hz
480, 520 MHz
Input Return Loss vs Output Power
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1020304050
Pout (W)
RL (d B)
Vdd = 12.5 V
Idq = 200 m A
520 MHz
500 MHz
480 MHz
Output Power vs Bias Curent
0
5
10
15
20
25
30
35
40
0 200 400 600 800 1000 1200
Idq (mA)
Pout (W)
Vdd = 12.5 V
P in = 0.85 W
52 0 MHz
50 0 MHz
480 MHz
Drain Efficiency vs Bias Current
0
10
20
30
40
50
60
0 200 400 600 800 1000 1200
Idq ( mA)
Nd (%)
Vdd = 12.5 V
Pin = 0 .85 W
500 MHz
480 MHz
520 MHz
Output Power vs Supply Voltage
0
5
10
15
20
25
30
35
5 7 9 1113151719
Vd d ( V)
Pout (W)
Idq = 200 mA
Pin = 0.85 W
520 MH z
500 MHz
480 MHz
Drain Efficiency vs Supply Voltage
0
10
20
30
40
50
60
70
6 8 10 12 14 16 18
Vdd (V)
Nd (%)
Idq = 200 mA
Pin = 0.85 W
520 MHz
500 MHz
500 MH z
5/13
PD55025 - PD55025S
-30
-25
-20
-15
-10
-5
0
0 1020304050
Pout (W)
RL (dB)
Vdd = 12.5 V
Idq = 200 m A
Input Return Loss vs O ut put Power (f = 175 MHz)
Power Gain vs Output Power (f = 175 MHz) Drain Efficiency vs Output Power (f = 175 MHz)
TYPICAL PERFORMANCE
(PD55025S)
Output Power vs Input Power (f = 175 MHz)
Output Power vs Gate-Source Voltage
0
5
10
15
20
25
30
01234
V
g
s
(
V
)
Pout (W)
Vdd = 12.5 V
Pin = 0.85 W
520 MHz
480 MHz
500 MHz
0
5
10
15
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5
Pin (W)
Pout (W)
Vdd = 12.5 V
Idq = 200 mA
0
5
10
15
20
25
30
0 1020304050
Pout (W)
Gp (W)
Vdd = 1 2.5 V
Idq = 200 m A
0
10
20
30
40
50
60
70
80
0 1020304050
Pout (W)
Nd (%)
Vdd = 12.5 V
Idq = 200 mA
PD55025 - PD55025S
6/13
500 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING)
500 MHz TEST CIRCUIT COMPONENT PART LIST
COMPONENT DESCRIPTION
B1,B2 FERRITE BEAD
C1,C13 300 pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C12,C13,C14 1 to 20 pF TRIMMER CAPACITOR
C6 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7, C19 120 pF 100 mil CHIP CAPACITOR
C10, C16 10 µF, 50 V ELECTROLYTIC CAPACITOR
C9, C17 0.1 mF, 100 mil CHIP CAP
C8, C18 1.000 pF 100 mil CHIP CAP
C5, C11 33 pF, 100 mil CHIP CAP
L1 56 nH, 7 TURN, COILCRAFT
N1, N2 TYPE N FLANGE MOUNT
R1 15 , 1 W CHIP RESISTOR
R2 1 K, 1 W CHIP RESISTOR
R3 33 K, 1 W CHIP RESISTOR
Z1 0.471” X 0.080” MICROSTRIP
Z2 1.082” X 0.080” MICROSTRIP
Z3 0.372” X 0.080” MICROSTRIP
Z4,Z5 0.260” X 0.223” MICROSTRIP
Z6 0.050” X 0.080” MICROSTRIP
Z7 0.551” X 0.080” MICROSTRIP
Z8 0.825” X 0.080” MICROSTRIP
Z9 0.489” X 0.080” MICROSTRIP
BOARD ROGER , ULTRA LAM 2000 THK 0.030 ”, εr = 2.55 2oz. ED cu 2 SIDES.
RF
INPUT
Z1 Z3
R3
C3
Z2
C2
C10 C9
VGG
+
B1
C19 C18 C17 C16
VDD
Z5
B2
L1
C8
+
R2
C7
C1
Z4
R1
C11
Z6
C13
Z7
C14
Z8 Z9 N2
OUTPUT
RF
C15
DUT
C4 C12
C5 C6
7/13
PD55025 - PD55025S
500 MHz TEST CIRCUIT PHOTOMAS TER
6.4 inches
4 inches
500 MHz TEST CIRCUIT
BIAS VDD GND
PD55025 - PD55025S
8/13
175 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING)
C10
C9
)
C8 R1 C11 C12 C13
)
+VGG +VDD
FB2FB1
R2
C14
C15
R3
C1
C2 C3 R4
C7
R5
L1
C16
C4 C5
C6 RF
OUTPUT
RF
INPUT
C10
C9
))
C8 R1 C11 C12 C13
)
+VGG +VDD
FB2FB1
R2
C14
C15
R3
C1
C2 C3 R4
C7
R5
L1
C16
C4 C5
C6 RF
OUTPUT
RF
INPUT
175 MHz TEST CIRCUIT COMPO NENT PART LIST
COMPONENT DESCRIPTION
C1, C6 300 pF CHIP CAPACITOR
C2, C3 91 pF CHIP CAPACITOR
C4, C14 75 pF CHIP CAPACITOR
C5 1-20 pF TRIMMER CAPACITOR
C7 .01 µF MOLDED CAPACITOR
C8, C13 10 µF ELECTROLYTIC CAPACITOR
C9, C12 .1 µF CHIP CAPACITOR
C10, C11 1000 pF CHIP CAPACITOR
C15, C16 1200 pF CHIP CAPACITOR
FB1, FB2 FERRITE BEAD
R1 33 KCHIP RESISTOR
R2 17 CHIP RESI STOR
R3 15 CHIP RESISTOR
R4 47 CHIP RESISTOR
R5 220 CHIP RESISTOR
L1 5 TURN, 16 AWG MAGNET WIRE, ID = .40” ,INDUCTOR
BOARD ROGER, ULTRA LAM 2000, THK 0.030”, εr = 2.55 2oz. ED cu 2 SIDES.
9/13
PD55025 - PD55025S
FREQ IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS22∠Φ
(MHz)
50 0.837 -162 13.33 89 0.018 -1 0.780 -168
100 0.846 -169 6.51 76 0.017 -12 0.803 -172
150 0.862 -171 4.15 66 0.016 -19 0.831 -172
200 0.878 -173 2.93 58 0.015 -26 0.859 -172
250 0.895 -174 2.20 51 0.013 -31 0.874 -172
300 0.910 -174 1.71 45 0.012 -36 0.886 -173
350 0.921 -175 1.36 40 0.010 -40 0.892 -173
400 0.932 -176 1.11 35 0.009 -42 0.897 -175
450 0.941 -177 0.92 31 0.008 -43 0.915 -176
500 0.946 -178 0.78 27 0.007 -44 0.932 -177
550 0.953 -178 0.66 24 0.006 -43 0.946 -178
600 0.957 -179 0.57 21 0.005 -42 0.964 -179
650 0.960 -180 0.50 18 0.004 -39 0.975 -178
700 0.964 180 0.44 16 0.004 -34 0.976 -179
750 0.966 179 0.39 14 0.003 -29 0.981 -179
800 0.968 178 0.95 12 0.002 -15 0.979 -179
850 0.970 178 0.31 10 0.002 -2 0.964 -179
900 0.971 177 0.28 8 0.002 16 0.960 180
950 0.972 177 0.26 6 0.002 34 0.953 179
1000 0.972 176 0.23 5 0.003 45 0.940 178
FREQ IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS22∠Φ
(MHz)
50 0.876 -164 13.87 90 0.013 1 0.823 -172
100 0.880 -172 6.87 79 0.012 -7 0.838 -175
150 0.887 -174 4.46 71 0.012 -13 0.855 -176
200 0.895 -175 3.22 64 0.011 -18 0.873 -175
250 0.905 -176 2.47 58 0.010 -22 0.879 -175
300 0.915 -176 1.96 52 0.009 -25 0.885 -175
350 0.922 -177 1.60 47 0.009 -28 0.886 -175
400 0.931 -178 1.32 42 0.008 -30 0.889 -177
450 0.938 -178 1.11 38 0.007 -31 0.906 -178
500 0.942 -179 0.95 34 0.006 -31 0.923 -179
550 0.948 -179 0.82 31 0.005 -30 0.937 -179
600 0.952 -180 0.71 28 0.005 -27 0.956 -179
650 0.954 180 0.63 25 0.004 -22 0.967 -179
700 0.959 179 0.55 22 0.003 -16 0.969 -179
750 0.961 178 0.49 20 0.003 -6 0.973 -179
800 0.963 178 0.45 17 0.003 3 0.970 -179
850 0.966 177 0.40 15 0.003 17 0.956 -180
900 0.967 177 0.36 13 0.003 27 0.952 179
950 0.968 176 0.33 11 0.003 38 0.945 179
1000 0.968 176 0.30 9 0.003 45 0.933 177
COMMON SOURCE S-PARAMETER (PD55025S)
(VDS = 12.5 V ID = 500 mA)
COMMON SOURCE S-PARAMETER (PD55025S)
(VDS = 12.5 V ID = 1.5 A)
PD55025 - PD55025S
10/13
FREQ IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS22∠Φ
(MHz)
50 0.849 -164 13.99 91 0.012 2 0.833 -173
100 0.881 -171 6.94 80 0.011 -6 0.841 -175
150 0.895 -173 4.51 72 0.011 -12 0.857 -175
200 0.903 -175 3.27 65 0.010 -16 0.871 -175
250 0.912 -176 2.50 58 0.010 -21 0.877 -175
300 0.921 -176 1.99 52 0.009 -24 0.882 -175
350 0.927 -177 1.62 47 0.008 -27 0.883 -176
400 0.936 -178 1.35 42 0.007 -29 0.886 -177
450 0.943 -178 1.13 38 0.006 -29 0.904 -178
500 0.946 -179 0.97 34 0.006 -29 0.920 -179
550 0.952 -180 0.83 31 0.005 -26 0.935 -179
600 0.955 180 0.72 27 0.004 -23 0.955 -180
650 0.957 179 0.64 24 0.004 -17 0.965 -179
700 0.961 179 0.56 22 0.003 -8 0.967 -179
750 0.963 178 0.50 19 0.003 2 0.970 -179
800 0.965 178 0.45 17 0.003 14 0.968 -179
850 0.968 177 0.41 15 0.003 27 0.953 -179
900 0.969 176 0.37 13 0.003 36 0.949 180
950 0.970 176 0.34 11 0.003 45 0.943 179
1000 0.971 175 0.31 9 0.003 54 0.930 178
FREQ IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS22∠Φ
(MHz)
50 0.890 -165 13.19 91 0.012 2 0.837 -174
100 0.892 -172 6.55 81 0.011 -6 0.846 -176
150 0.898 -174 4.28 73 0.011 -12 0.865 -176
200 0.904 -175 3.11 66 0.010 -15 0.879 -176
250 0.913 -176 2.39 60 0.010 -20 0.883 -176
300 0.921 -177 1.91 54 0.009 -23 0.089 -176
350 0.926 -177 1.57 49 0.008 -25 0.887 -176
400 0.935 -178 1.31 44 0.007 -27 0.889 -177
450 0.941 -179 1.10 40 0.007 -28 0.905 -179
500 0.944 -179 0.94 36 0.006 -27 0.921 -179
550 0.949 -180 0.82 33 0.005 -25 0.936 -180
600 0.953 180 0.71 29 0.004 -21 0.954 180
650 0.955 179 0.63 26 0.004 -17 0.964 -180
700 0.959 179 0.56 24 0.003 -10 0.965 -180
750 0.961 178 0.50 21 0.003 -2 0.968 -180
800 0.963 177 0.45 19 0.003 10 0.966 -179
850 0.966 177 0.41 17 0.003 22 0.952 -180
900 0.967 176 0.37 15 0.003 32 0.948 180
950 0.968 176 0.34 15 0.003 41 0.942 179
1000 0.969 175 0.31 11 0.004 49 0.930 177
COMMON SOURCE S-PARAMETER (PD55025S)
(VDS = 12.5 V ID = 3 A)
COMMON SOURCE S-PARAMETER (PD55025S)
(VDS = 13.8 V ID = 3 A)
11/13
PD55025 - PD55025S
PowerSO-10RF Straight Lead MECHANICAL DATA
CRITICAL DIMENSIONS:
- Overall width (L)
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
mm Inch
MIN. TYP. MAX MIN. TYP. MAX
A1 1.62 1.67 1.72 0.064 0.065 0.068
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
R1 0.25 0.01
R2 0.8 0.031
T1 6 deg 6 deg
T2 10 deg 10 deg
DIM.
PD55025 - PD55025S
12/13
PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA
mm Inch
MIN. TYP. MAX MIN. TYP. MAX
A1 0 0.05 0.1 0. 0.0019 0.0038
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 13.85 14.1 14.35 0.544 0.555 0.565
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
L 0.8 1 1.1 0.030 0.039 0.042
R1 0.25 0.01
R2 0.8 0.031
T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg
T1 6 deg 6 deg
T2 10 deg 10 deg
DIM.
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Stand-off (A1)
- Overall width (L)
13/13
PD55025 - PD55025S
Info rm ation furnished is b el i eved to be accurate an d rel i able. However, STMicro el ectro ni cs assumes no responsibility for t he co nsequences
of use of such information nor for any inf ringement of patents or other rights of third parties which may result from its use. No license is grant ed
by i m pl i cation or oth erwise under any pat ent or paten t ri ghts of STMic roelec tr onics. Specifications ment i oned in this publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products a re not
authorized for use as cri t i cal comp onents in l i f e support devices or systems without express writ ten approval of STM i croelectronics.
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