NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222
P2N2222A
EBC
TO-92
Com
lementar
Silicon Transistors For Switchin
And Linear A
lications
DC Am
lifier & Driver For Industrial A
lications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL 2222 2222A UNIT
Collector -Emitter Voltage VCEO 30 40 V
Collector -Base Voltage VCBO 60 75 V
Emitter -Base Voltage VEBO 5.0 6.0 V
Collector Current Continuous IC mA
Power Dissipation @Ta=25 degC PD mW
Derate Above 25deg C mW/deg C
@ Tc=25 degC PD W
Derate Above 25deg C mW/deg C
Operating And Storage Junction Tj, Tstg deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) deg C/W
Junction to Ambient Rth(j-a) deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2222 2222A UNIT
Collector -Emitter Voltage VCEO IC=10mA,IB=0 >30 >40 V
Collector -Base Voltage VCBO IC=10uA.IE=0 >60 >75 V
Emitter-Base Voltage VEBO IE=10uA, IC=0 >5.0 >6.0 V
Collector-Cut off Current ICBO VCB=50V, IE=0 <10 - nA
VCB=60V, IE=0 - <10 nA
Ta=150 deg C
VCB=50V, IE=0 <10 - uA
VCB=60V, IE=0 - <10 uA
ICEX VCE=60V, VBE=3V - <10 nA
ICEO VCE=10V, IB=0 <10 <10 nA
Emitter-Cut off Current IEBO VEB=3V, IC=0 - <10 nA
Base-Cut off Current IBEX VCE=60V, VBE=3V - <20 nA
Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA <0.4 <0.3 V
IC=500mA,IB=50mA <1.6 <1.0 V
Base Emitter Saturation Voltage VBE(Sat) * IC=150mA,IB=15mA <1.3 0.6-1.2 V
IC=500mA,IB=50mA <2.6 <2.0 V
12
-55 to +150
83.3
200
600
625
5
1.5
Transys
Electronics
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