Semiconductor Group 1
PNP Silicon Darlington Transistor BC 516
5.91
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 516 Q62702-C944 TO-92
123
C B E
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Peak collector current ICM 800
Base current IB100
Collector current IC500 mA
Junction temperature Tj150 ˚C
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 40
Thermal Resistance
Junction - ambient Rth JA 200 K/W
Emitter-base voltage VEB0 10
Peak base current IBM 200
Junction - case2) Rth JC 135
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
High current gain
High collector current
Complementary type: BC 517 (NPN)
1
2
3
Semiconductor Group 2
BC 516
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 10 mA V(BR)CE0 30
Collector-base breakdown voltage
I
C = 100 µAV(BR)CB0 40
DC current gain
I
C = 20 mA; VCE = 2 V hFE 30 000
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT 200
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 10
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
100
10
µAEmitter cutoff current
VEB = 4 V IEB0 100
V
Collector-emitter saturation voltage1)
I
C = 100 mA; IB = 0.1 mA VCEsat ––1
Base-emitter voltage1)
I
C = 10 mA; VCE = 5 V VBE 1.4
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo 3.5
1) Pulse test: t300 µs, D 2%.
Semiconductor Group 3
BC 516
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
Transition frequency fT=f(IC)
VCE = 5 V
Semiconductor Group 4
BC 516
Collector-emitter saturation voltage
IC=f (VCEsat)
hFE = 1000
DC current gain hFE =f(IC)
VCE = 2 V
Base-emitter saturation voltage
IC=f (VBEsat)
hFE = 1000
Capacitance C = f (VEB,VCB)