Semiconductor Group 1
PNP Silicon Darlington Transistor BC 516
5.91
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 516 Q62702-C944– TO-92
123
C B E
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Peak collector current ICM 800
Base current IB100
Collector current IC500 mA
Junction temperature Tj150 ˚C
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 40
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Emitter-base voltage VEB0 10
Peak base current IBM 200
Junction - case2) Rth JC ≤ 135
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
●High current gain
●High collector current
●Complementary type: BC 517 (NPN)
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