©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1
IGBT
SGH40N60UFD
SGH40N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Charac teris tics
Symbol Description SGH40N60UFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C40 A
Collector Current @ TC = 100°C20 A
ICM (1) Pulsed Collector Current 160 A
IFDiode Continuous Forward Current @ TC = 100°C15 A
IFM Diode Maximum Forward Current 160 A
PDMaximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ TC = 100°C64 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for So ldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to- Case -- 0.77 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 1.7 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics , and servo controls.
GCETO-3PN
G
C
E
G
C
E
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G -E Th reshold Voltage IC = 20mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 20A, VGE = 15V -- 2.1 2.6 V
IC = 40A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 1430 -- pF
Coes Output Capacitance -- 170 -- pF
Cres Reverse Transfer Capacitance -- 50 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 15 -- ns
trRise Time -- 30 -- ns
td(off) Turn-Off D e l a y Time -- 65 130 n s
tfFall Time -- 50 150 ns
Eon Turn-On Switching Loss -- 160 -- uJ
Eoff Tu r n -Off Switchi ng Lo s s -- 200 -- uJ
Ets Total Switching Loss -- 360 600 uJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 30 -- ns
trRise Time -- 37 -- ns
td(off) Turn-Off D e l a y Time -- 11 0 200 n s
tfFall Time -- 144 250 ns
Eon Turn-On Switching Loss -- 310 -- uJ
Eoff Turn-Off Swit ch i n g Loss -- 4 3 0 -- uJ
Ets Total Switching Loss -- 740 1200 uJ
QgTotal Gate Charge VCE = 300 V, IC = 20A,
VGE = 15V
-- 97 150 nC
Qge Gate-Emitter Charge -- 20 30 nC
Qgc Gate-Collector Charge -- 25 40 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 15A TC = 25°C-- 1.4 1.7 V
TC = 100°C-- 1.3 --
trr Diode Reverse Recovery Time
IF = 15A,
di/dt = 200A/ us
TC = 25°C-- 42 60 ns
TC = 100°C-- 74 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 4.5 6.0 A
TC = 100°C-- 6.5 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 80 180 nC
TC = 100°C-- 220 --
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
0 4 8 12 16 20
0
4
8
12
16
20 Comm o n E mitter
TC = 125℃
40A
20A
IC = 10A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
048121620
0
4
8
12
16
20 Common Emitter
TC = 25℃
40A
20A
IC = 10A
Collec to r - Em itter Voltag e, V
CE [V]
Gate - Emitter Voltage, VGE [V ]
0
5
10
15
20
25
30
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100℃
Powe r D is si pation = 3 2W
VCC = 300V
Load Cur ren t : pea k o f s q uare w ave
Frequency [KHz]
Load Current [A]
0306090120150
0
1
2
3
4
40A
20A
IC = 10A
Common Emitter
VGE = 15V
Collector - Emitter Voltage, V
CE [V]
Case Temperature, TC [℃]
0.5 1 10
0
10
20
30
40
50
60
70
80 Comm o n E mitter
VGE = 15V
TC = 25℃
TC = 125℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
02468
0
40
80
120
160 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
Fig 1. Ty pica l Output Cha rac teristics Fig 2. Typical Saturation Voltag e
Characteristics
Fig 3. Saturat i on Voltage vs. Case
Temp erature at Variant Curr ent Level Fig 4. Load Cu rr ent vs. Fr equency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Vo ltage vs. VGE
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
10 15 20 25 30 35 40
20
100
1000
Toff
Tf
Toff
Tf
Com m o n Em it te r
VCC = 30 0V, V GE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Switching Time [nS]
Collector Current, IC [A]
110100200
50
100
1000
2000
Eon
Eoff
Eon
Eoff
Com mon Emit ter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
TC = 125℃
Switc hing Loss [uJ]
Gate Resistance, RG [Ω]
110100200
20
100
1000
Toff
Tf
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
TC = 125℃
Switchin g T ime [ ns]
Gate Res istance, RG [Ω]
110100200
10
100
300 Common Emitter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
TC = 125℃
Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
11030
0
500
1000
1500
2000
2500
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MH z
TC = 25℃
Ca pacitance [pF]
Colle ctor - Emitter Voltage, VCE [V]
Fig 7. Capaci tanc e C harac t eristics Fig 8. Tur n- O n C har acterist i cs vs.
Gate Resistance
Fig 9. Tur n-Off Characteristic s vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On C har acterist i cs vs.
Collector Current Fig 12. Tur n- O ff Characte ri st i cs v s.
Collector Current
10 15 20 25 30 35 40
10
100
200
Ton
Tr
Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Current, IC [A]
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
0306090120
0
3
6
9
12
15
300 V
200 V
VCC = 100 V
Common Emitter
RL = 15 Ω
TC = 25℃
Gate - Emitter Voltage, V
GE [ V ]
Gate Charge , Qg [ nC ]
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al R esp onse, Zthjc [℃/W]
Rectangu lar Pulse Duration [sec]
1 10 100 1000
0.1
1
10
100
500
Safe Operating Area
VGE=20V , TC=100oC
Collecto r Current , I
C [A]
Collector-Emitter Voltage, VCE [V]
0.3 1 10 100 1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly w ith increase
in tem pe rat ur e
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector Cu r r ent, I
C [A]
Collector-Emitter Voltage, VCE [V]
10 15 20 25 30 35 40
10
100
1000
3000
Eoff
Eon
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Swi tc hin g Lo ss [uJ]
Collector Current, IC [A]
Fig 14. Gate C harge C har acterist i cs
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Du ty fact or D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Tra nsient Thermal Imped anc e of IGBT
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
100 1000
20
40
60
80
100
120 VR = 20 0V
IF = 15A
TC = 25℃
TC = 100℃
Reverce Re covery Time, t
rr [ns]
di/dt [A/us]
100 1000
1
10
100 VR = 200V
IF = 15A
TC = 25℃
TC = 100℃
Reverse Recovery Current, I
rr [A]
di/dt [A/us]
100 1000
0
200
400
600
800 VR = 200V
IF = 15A
TC = 25℃
TC = 100℃
Stor ed Rec overy Char ge , Q
rr [nC]
di/dt [A/us]
1
10
100
0123
TC = 25℃
TC = 100℃
Forward Voltage Drop, VF [V]
Forward Current, I
F [A]
Fig 19. R everse R e covery CurrentFig 18. Forward Characteristics
Fig 20. Stored Charge Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1
SGH40N60UFD
Mechanical Dimensions
Dimensions in Millimeters
TO-3PN
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended f or surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical compon ent is any com ponent of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Ident i ficati on Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reser ves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5©2002 Fairchild Semiconductor Corporation
STAR*POWER is used under license
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
