VUB120-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE(sat) = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name VUB120-16NOXT W5 W6 S1 M1/O1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages: Applications: Package: Soldering connections for PCB mounting Convenient package outline NTC 3~ Rectifier with brake unit for drive inverters Housing: V2-Pack IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved DCB ceramic base plate Isolation voltage 3600 V~ Easy to mount with two screws Space and weight savings RoHS compliant Data according to IEC 60747and per diode unless otherwise specified 20111102a VUB120-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current, drain current VR/D = 1600 V TVJ = 25C 50 A VR/D = 1600 V TVJ = 125C 2 mA TVJ = 25C 1.16 V 1.36 V 1.09 V VF forward voltage drop IT = min. 60 A typ. I T = 120 A IT = TVJ = 125C 60 A I T = 120 A I D(AV)M bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 80C for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved V 188 A TVJ = 150 C 0.81 V d= rectangular Ptot 1.35 T VJ = 150 C 4.4 m 0.60 K/W 0.2 K/W TC = 25C 200 W t = 10 ms; (50 Hz), sine TVJ = 45 C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45 C 6.05 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 5.89 kAs TVJ = 150 C 4.37 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified 4.25 kAs 37 pF 20111102a VUB120-16NOXT Ratings Brake IGBT Symbol VCES Definition VGES Conditions max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient collector gate voltage 30 V I C25 collector current collector emitter voltage min. TVJ = I C80 TC = 25C 155 A TC = 80C 107 A 500 W 2.2 V 6.5 V 0.1 mA Ptot total power dissipation VCE(sat) collector emitter saturation voltage I C = 100 A; VGE = 15 V VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C TC = 25C TVJ = 25C 1.9 5.4 gate emitter leakage current VGE = 20 V VCE = 600 V; VGE = 15 V; I C = 100 A QG(on) t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM inductive load TVJ = 125C VGE = 15 V; R G = 6.8 SCSOA t SC short circuit duration VCE = 720 V; VGE = 15 V I SC short circuit current R G = 6.8 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 295 nC 70 ns 40 ns 250 ns 100 ns 8.5 mJ 11.5 mJ TVJ = 125C VCEK = 1200 V short circuit safe operating area mA 500 VCE = 600 V; IC = 100 A VGE = 15 V; R G = 6.8 5.9 0.1 TVJ = 125C I GES V 2.5 TVJ = 125C total gate charge typ. 25C TVJ = 125C 300 A 10 s A 400 0.25 K/W K/W 0.1 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 62 A TC = 80C 40 A TVJ = 25C 2.71 V I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = 600 V I RM max. reverse recovery current -di F /dt = 400 A/s t rr reverse recovery time IF = R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125C 1.94 V TVJ = 25C 0.25 mA 1 mA TVJ = 125C C 1.8 TVJ = 125C 30 A 23 A 150 ns 0.9 K/W K/W 0.3 Temperature Sensor NTC R 25 resistance B 25/50 temperature coefficient IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved TVJ = 25C 4.75 5 3375 Data according to IEC 60747and per diode unless otherwise specified 5.25 k K 20111102a VUB120-16NOXT Ratings Package V2-Pack Symbol I RMS Definition Conditions I RM current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight 76 MD mounting torque V ISOL isolation voltage d Spp/App 2 3600 V t = 1 minute 3000 V terminal to terminal 6.0 mm terminal to backside 12.0 mm creepage distance on surface | striking distance through air XXXXXXXXXXXXX UL Part name Ordering Standard yywwx Date code Prod. line Ordering Number VUB120-16NOXT Similar Part VUB120-16NOX IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved g t = 1 second d Spb/Apb Logo typ. Marking on Product VUB120-16NOXT Package V2-Pack Delivery Mode Box Quantity 6 Code No. 510461 Voltage class 1600 Data according to IEC 60747and per diode unless otherwise specified 20111102a VUB120-16NOXT Outlines W5 W6 S1 M1/O1 NTC Marking U1/ W1 ~A6 ~E6 ~K6 M10/O10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified W U S/T 10 10 10 20111102a VUB120-16NOXT Rectifier 1000 120 100 50 Hz 80 % VRRM 10000 VR = 0 V 800 80 TVJ = 45C TVJ =45C 2 It ITSM 600 IT 60 [A] [A] TVJ =150C [A2s] 400 40 TVJ = 125C 150C 200 20 TVJ =150C TVJ = 25C 0 0.0 0.5 1.0 0 0.001 1.5 1000 0.01 0.1 1 VT [V] t [s] Fig.1 Forward current versus voltage drop per diode Fig.2 Surge overload current 700 1 10 t [ms] 2 Fig.3 I t versus time per diode 200 RthKA K/W = 0.01 600 0.1 150 500 Ptot 0.2 400 ITAVM 300 [A] [W] 100 0.4 200 0.7 50 1.5 100 3 0 0 0 40 80 120 160 0 25 IRMS [A] 50 75 100 125 150 0 40 TA [C] 80 120 160 TC [C] Fig.4 Power dissipation versus direct output current and ambient temperature, sine 180 Fig. 5 Max. forward current vs. case temperature 0.7 0.6 0.5 0.4 ZthJC 0.3 [K/W] i Ri [K/W] ti [s] 1 2 3 4 0.015 0.195 0.56 0.23 0.002 0.04 0.43 0.2 0.2 0.1 0.0 0.001 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20111102a VUB120-16NOXT Brake IGBT 200 200 VGE = 15 V 150 200 13 V VGE = 15 V 17 V 19 V 11 V 160 150 IC TVJ = 25C IC 100 IC TVJ = 125C 120 100 TVJ = 125C [A] 80 [A] [A] 9V 50 TVJ = 125C 50 40 TVJ = 25C 0 0 0 1 2 3 0 0 1 2 3 4 5 Fig. 1 Typ. output characteristics 9 IC = 100 A VCE = 600 V 16 RG = 6.8 VCE = 600 V VGE = 15 V TVJ = 125C 16 15 E VGE IC = 100 A VCE = 600 V VGE = 15 V TVJ = 125C 14 12 E 12 E off 10 [mJ] [V] [mJ] 8 Eoff Eon 10 E on 5 4 0 8 0 300 400 10 11 12 13 VGE [V] 20 200 8 Fig. 3 Typ. transfer characteristics Fig. 2 Typ. output characteristics 20 100 7 VCE [V] VCE [V] 0 6 6 0 40 80 120 160 200 QG [nC] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current 4 8 12 16 20 24 RG [] Fig. 6 Typ. switching energy versus gate resistance 0.3 10000 0.2 ZthJC R 1000 [K/W] 0.1 1 2 3 4 0.0 0.001 Ri 0.05 0.035 0.12 0.045 ti 0.002 0.03 0.03 0.08 [] 100 0.01 0.1 1 10 0 25 50 Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 75 100 125 150 T [C] t [s] Fig. 8 Typ. thermistor resistance versus temperature Data according to IEC 60747and per diode unless otherwise specified 20111102a VUB120-16NOXT Brake Diode 80 60 5 TVJ = 125C VR = 800 V 70 50 4 IF = 60 A 30 A 15 A 60 50 IF [A] IF = 60 A 30 A 15 A 3 Qr 40 30 [C] TVJ = 125C 25C 30 40 IRM [A] 2 20 20 1 0 0 1 2 0 1 00 3 TVJ = 125C VR = 800 V 10 10 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 1 Typ. forward current IF vs. VF Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 1000 1.5 IF = 60 A 30 A 15 A 180 1.2 TVJ = 125C IF = 30 A 100 200 trr [ns] 800 120 TVJ = 125C VR = 800 V Kf 1.0 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 220 2.0 400 -diF /dt [A/s] 1.0 80 0.8 60 0.6 40 0.4 VFR trr [s] [V] 160 IRM 0.5 140 QR 20 0.2 trr VFR 0.0 120 0 40 80 120 160 0 0 200 400 600 800 1000 TVJ [C] -diF /dt [A/s] Fig. 4 Typ. dynamic parameters Qr, IRM, versus TVJ Fig. 5 Typ. recovery time trr vs. -diF /dt 0 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1.0 0.8 0.6 ZthJC [K/W] i 0.2 Ri [K/W] 1 0.465 2 0.179 3 0.256 0.0 0.001 0.01 0.1 ti [s] 0.0052 0.0003 0.0397 1 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20111102a