VUB120-16NOXT
3~ Rectifier Bridge + Brake Unit
Standard Rectifier Module
NTC
S1
U1/
W1
M1/O1
~A6
~E6
~K6
M10/O10 W
10 U
10 S/T
10
W5 W6
Part name
VUB120-16NOXT
Features / Ad vantages: Applications: Package:
● Housing: V2-Pack
● DCB ceramic base plate
● Isolation voltage 3600 V~
● Easy to mount with two screws
● Space and weight savings
● RoHS complia n t
● Soldering connections for PCB mounting
● Convenient package outline
● NTC
● 3~ Rectifier with brake unit
for drive i n v e r t e r s
V = V
RRM
1600
3 ~
Rectifier Brake
Chopper
V = V
CES
1200
I = A
DAVM
188 I = A
C25
155
I = A
FSM
1100 V = V
CE(sat)
1.9
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
V = V
kA²
s
kA²
s
kA²
s
kA²
s
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.16
R0.60 K/
W
R/D
min.
188
V
RSM
V
1700
50T = 25°C
VJ
T = °C
VJ
m
A
2V = V
R/D
T = 25°C
VJ
I = A
T
V
T = °C
C
80
P
tot
200
W
T = 25°C
C
R
thCH
K/
W
0.2
60
1600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
thermal resistance case to heatsink
total power dissipation
Conditions Uni
t
1.36
T = 25°C
VJ
125
V
F0
V
0.81T = °C
VJ
150
r
F
4.4 m
Ω
V
1.09T = °C
VJ
I = A
T
V
60 1.35
I = A
T
120
I = A
T
120
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
1600
max. re pe titive reverse b locki n g volt a ge T = 25°C
VJ
C
J
37
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine T = °C
VJ
45
max. forward surge current
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
1.10
1.19
4.37
4.25
k
A
k
A
A
k
A
935
1.01
6.05
5.89
1600
D(AV)M
d =rectangular ⅓
bridge output current
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
155 A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
107
V
V
CE(sat)
total power dissipation 500 W
collector emitter leakage current 6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient collector gate voltage
T = 80°C
C
V
P
tot
gate emitter threshold voltage
RBSOA 300
±30
Brake IGBT
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C80
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.2
2.5
5.95.4 mA
0.1 mA
0.1
nA
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
295 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
8.5 mJ
11.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA 10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
tshort circuit current
I
SC
SC
R = Ω; non-repetitive
G
400 A
R
thJC
thermal resistance junction to case
0.1 K/W
V
RRM
V1200
max. repe titive rev erse volt a g e T = 25°C
VJ
T = 25°C
forward current A
62 A
C
40T = 80°C
C
I
F25
I
F80
T = 25°C
forward voltage V
2.71 V
VJ
1.94T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.25 mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.8 µC
23 A
150 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V = 600 V
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case 0.9 K/W
Temperature Sensor NTC
T = 25°C
resistance kΩ
5.25 K
VJ
3375
R
25
B
25/50
54.75
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
100
4
100
100
30
30
6.8
6.8
6.8
600
720
400
600
Brake Diode
I
CM
1.9
temperature coefficient
R
thCH
thermal resistance case to heatsink 0.25 K/W
0.3R
thCH
thermal resistance case to heatsink K/W
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
Ratings
Ordering Delivery Mode Quantity Code No.
Standard Ordering Number
VUB120-16NOXT 510461Box 6
XXXXXXXXXXXXX yywwx
Logo UL Part name Date code Prod. line
VUB120-16NOX V2-Pack
Similar Part Package
Marking on Product
VUB120-16NOXT
1600
Voltage class
Package V2-Pack
T
VJ
°C
M
D
Nm2.5
mounting torque 2
T
stg
°C125
storage temperature -40
Weight g76
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
I current 100 A
per terminal
RM
150-40
terminal to terminal
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
Marking
Outlines
NTC
S1
U1
/
W1
M1/O1
~A6
~E6
~K6
M10/O10 W
10 U
10 S/T
10
W5 W6
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
0 40 80 120 160
0
50
100
150
200
0255075100125150
011
1000
10000
0.001 0.01 0.1 1
0
200
400
600
800
1000
I
TAVM
[A]
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
t [ms]
I
TSM
[A]
t[s]
t [s]
0.0 0.5 1.0 1.5
0
20
40
60
80
100
120
I
T
[A]
V
T
[V]
0 40 80 120 160
0
100
200
300
400
500
600
700
P
tot
[W]
T
VJ
=25°C
T
VJ
=45°C
T
VJ
=150°C
80 % V
RRM
50 Hz
R
thKA
K/W =
3
1.5
0.7
0.4
0.01
V
R
=0V
T
VJ
=45°C
T
VJ
=150°C
I
2
t
[A
2
s]
T
A
[°C]I
RMS
[A] T
C
[°C]
Fig.1 Forward current versus
voltage drop per diode Fig.2 Surge overload current Fig.3 I
2
t versus time per diode
Fig.4 Power dissipation versus direct output current
and ambient temperature, sine 180° Fig. 5 Max. forward current vs.
case temperature
Fi
g
. 6 Transient thermal im
p
edance
j
unction to case
0.1
0.2
iR
iti
[K/W] [s]
1 0.015 0.002
20.195 0.04
3 0.56 0.43
4 0.23 0.2
T
VJ
=125°C
150°C
Z
thJC
[K/W]
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
0123
0
50
100
150
200
0 40 80 120 160 200
0
4
8
12
16
20
01234
0
50
100
150
200
VCE [V]
IC
[A]
QG[nC]
VGE
[V]
9V
11 V
5 6 7 8 9 10 11 12 13
0
40
80
120
160
200
0 100 200 300 400
0
5
10
15
20
TVJ = 125°C
13 V
4 8 12 16 20 24
6
8
10
12
14
16
E
[mJ]
Eoff
Fig. 1 Typ. output characteristics
VCE [V]
IC
[A]
VGE =15V
17 V
19 V
Fig. 2 Typ. output characteristics
IC
[A]
Fig. 3 Typ. transfer characteristics
VGE [V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
Eon
Fig. 6 Typ. switching energy
versus gate resistance
RG[Ω]
E
[mJ]
IC [A]
Eon
Eoff
VGE =15V
TVJ =25°C
TVJ = 125°C
TVJ =25°C
TVJ = 125°C
RG = 6.8Ω
VCE = 600 V
VGE =±15V
TVJ =125°C
IC =100A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
IC=100A
VCE =600V
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
t[s]
ZthJC
[K/W]
Fig. 7 Transient thermal impedance junction to case
Riti
10.05 0.002
2 0.035 0.03
30.12 0.03
4 0.045 0.08
0 25 50 75 100 125 150
100
1000
10000
T[°C]
R
[Ω]
Fig. 8 Typ. thermistor resistance
versus temperature
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
VUB120-16NOXT
200 600 10000400800
120
140
160
180
200
220
11.010.0100.0
0.0
0.2
0.6
0.8
1.0
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000 400 800
0
10
20
30
40
50
60
0001001
0
1
2
3
4
5
0123
0
10
20
30
40
50
60
70
80
K
f
T
VJ
[°C]
t[s]
V
FR
[V]
I
RM
[A]
Q
r
[µC]
I
F
[A]
V
F
[V] -di
F
/dt [A/µs]
t
rr
[ns]
Z
thJC
[K/W]
V
FR
t
rr
Fig. 1 Typ. forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
r
,I
RM
,versusT
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. transient thermal impedance junction to case
t
rr
[µs]
I
F
=60A
30 A
15 A
I
RM
Q
R
-di
F
/dt [A/µs]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
T
VJ
= 125°C
I
F
=30A
T
VJ
=125°C
V
R
= 800 V
T
VJ
=125°C
25°C
T
VJ
=125°C
V
R
= 800 V
I
F
= 60 A
30 A
15 A
I
F
=60 A
30 A
15 A
T
VJ
= 125°C
V
R
=800 V
iR
iti
[K/W] [s]
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20111102a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
