ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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A Product Line of
Diodes Incorporated
ZX5T951G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > -60V
IC = -5.5A High Continuous Collector Current
ICM = -15A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -70mV @ -1A
RSAT = 39mΩ for a Low Equivalent On-Resistance
hFE Specified Up to -10A for a High Gain Hold Up
Complementary NPN Type: ZX5T851G
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZX5T951GTA
X5T951
7
12
1,000
ZX5T951GTC
X5T951
13
12
4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT223
Top View
Device Symbol
Top View
Pin-Out
C
E
B
Green
X5T 951 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
YWW
X5T
951
591A
SOT223
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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ZX5T951G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-5.5
A
Peak Pulse Current
ICM
-15
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
3.0
24
W
mW/°C
(Note 6)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
42
°C/W
(Note 6)
RJA
78
Thermal Resistance Junction to Lead
(Note 7)
RJL
10.48
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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ZX5T951G
Thermal Characteristics and Derating Information
100m 110 100
10m
100m
1
10
Single Pulse. Tamb=25°C
52mmX52mm FR4
2oz Cu
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25mmX25mm FR4
1oz Cu
52mmX52mm FR4
2oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40 52mmX52mm FR4
2oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse. Tamb=25°C
52mmX52mm FR4
2oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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ZX5T951G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-100
-120
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage
BVCER
-100
-120
-
V
IC = -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-60
-80
-
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.1
-
V
IE = -100µA
Collector-Base Cutoff Current
ICBO
-
<1
-
-20
-0.5
nA
µA
VCB = -80V
VCB = -80V, TA = +100°C
Collector-Emitter Cutoff Current
ICER
R ≤ 1kΩ
-
<1
-
-20
-0.5
nA
µA
VCB = -80V
VCB = -80V, TA = +100°C
Emitter Cutoff Current
IEBO
-
<1
-10
nA
VEB = -6V
Static Forward Current Transfer Ratio (Note 9)
hFE
100
250
-
-
IC = -10mA, VCE = -1V
100
200
300
IC = -2A, VCE = -1V
45
90
-
IC = -5A, VCE = -1V
10
25
-
IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-
-15
-25
mV
IC = -100mA, IB = -10mA
-
-55
-70
IC = -1A, IB = -100mA
-
-90
-120
IC = -2A, IB = -200mA
-
-195
-250
IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
-1,030
-1,150
mV
IC = -5A, IB = -500mV
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-
-920
-1,020
mV
IC = -5A, VCE = -1V
Output Capacitance (Note 9)
Cobo
-
48
-
pF
VCB = -10V. f = 1MHz
Transition Frequency
fT
-
120
-
MHz
VCE = -10V, IC = -100mA
f = 50MHz
Switching Time
ton
-
39
-
ns
VCC = -10V, IC = -1A
IB1 = -IB2 = -100mA
toff
-
370
-
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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ZX5T951G
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 110
10m
100m
1
1m 10m 100m 110
0.0
0.1
0.2
0.3
0.4
0.5
1m 10m 100m 110
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 110
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 110
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
300
VCE(SAT) v IC
Tamb=25°C
IC/IB=50
IC/IB=20
IC/IB=10
- VCE(SAT) (V)
- IC Collector Current (A)
VBE(SAT) v IC
IC/IB=10
100°C
25°C
-55°C
- VCE(SAT) (V)
- IC Collector Current (A)
hFE v IC
VCE=1V
-55°C
25°C
100°C
Normalised Gain
- IC Collector Current (A)
25°C
VCE(SAT) v IC
IC/IB=10
100°C
-55°C
- VBE(SAT) (V)
- IC Collector Current (A)
VBE(ON) v IC
VCE=1V
100°C
25°C
-55°C
- VBE(ON) (V)
- IC Collector Current (A)
Typical Gain (hFE)
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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© Diodes Incorporated
A Product Line of
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ZX5T951G
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Y
XC
C1 Y2
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b1
2.90
3.10
3.00
b2
0.60
0.80
0.70
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
7 of 7
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March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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