4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
IRFR214, IRFU214
2.2A, 250V, 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high-
power bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Features
• 2.2A, 250V
•r
DS(ON) = 2.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRFR214 TO-252AA IRFR214
IRFU214 TO-251AA IRFU214
NOTE: When ordering, use the entire part number. G
D
S
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet July 1999 File Number
3274.2
4-384
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR214, IRFU214 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 250 V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID2.2
1.4 A
A
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 8.8 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD25 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas 61 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC TO 125oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 250 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS =0.8 x Rated BVDSS, VGS = 0V
TJ = 150oC- - 250 µA
On-State Drain Current ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 2.2 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 4) rDS(ON) ID = 1.3A, VGS = 10V (Figure 8) - 1.6 2.000 Ω
Forward Transconductance (Note 4) gfs VDS = ≥50V, IDS = 1.3A 1.1 - - S
Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS,I
D≈2.7A, RGS =24Ω,
RL = 4.5Ω,V
GS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 7.0 - ns
Rise Time tr- 7.6 - ns
Turn-Off Delay Time td(OFF) -16- ns
Fall Time tf- 7.0 - ns
Total Gate Charge Qg(TOT) VGS = 10V, ID≈5.6A, VDS = 0.8 x Rated BVDSS,
(Figure 11)
Gate Charge is Essentially Independent of Oper-
ating Temperature
- - 10 nC
Gate to Source Charge Qgs - - 1.8 nC
Gate to Drain “Miller” Charge Qgd - - 5.5 nC
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 9) - 140 - pF
Output Capacitance COSS -42- pF
Reverse Transfer Capacitance CRSS - 9.6 - pF
IRFR214, IRFU214
4-385
Internal Drain Inductance LDMeasured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 4.5 - nH
Internal Source Inductance LSMeasured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC - - 5.0 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 110 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
- - 2.2 A
Pulse Source to Drain Current
(Note 2) ISDM - - 8.8 A
Source to Drain Diode Voltage (Note 4) VSD TJ = 25oC, ISD = 2.2A, VGS = 0V(Figure 10) - - 2.0 V
Reverse Recovery Time trr TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs 97 - 390 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs 0.32 - 1.3 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. VDD = 50V, starting TJ= 25oC, L = 21mH, RG = 25Ω, peak IAS = 2.2A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LS
LD
G
D
S
G
D
S
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
025 50 75 100 125
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
150
0.8
1.2
1.6
2.0
2.4
0.4
IRFR214, IRFU214
4-386
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS (TC = 25oC)
FIGURE 6. OUTPUT CHARACTERISTICS (TC = 150oC) FIGURE 7. TRANSFER CHARACTERISTICS
Typical Performance Curves
Unless Otherwise Specified (Continued)
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 10-2 0.1 1
0.01
10
0.1
1
10-4 10
ZθJC, TRANSIENT
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
THERMAL IMPEDANCE
100µs
1ms
10ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
100
10
1.0
0.1110
100 1000
TC = 25oC
OPERATION IN THIS
AREA LIMITED
BY rDS(ON)
TJ = MAX RATED
SINGLE PULSE
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10-1 100101
100
10-1
PULSE DURATION = 80µs
TC = 25oC
VGS = 15V
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5.5V
VGS = 5V
VGS = 4.5V
TOP
BOTTOM
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10-1 100101
100
10-1
VGS = 15V
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5.5V
VGS = 5V
VGS = 4.5V
TOP
BOTTOM
PULSE DURATION = 80µs
TC = 150oC
DUTY CYCLE = 0.5% MAX
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
10
1
0.1
10-2
456 10789
10-3
TJ = 150oC
TJ = 25oC
PULSE DURATION = 80µs
VDS = ≥50V
DUTY CYCLE = 0.5% MAX
IRFR214, IRFU214
4-387
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
2.5
2.0
1.5
1.0
0.5
0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
VGS = 10V, ID = 5.6A
DUTY CYCLE = 0.5% MAX
CRSS
COSS
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGS
500
400
300
200
100
010 101102
VDS, DRAIN TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 150oC
TJ = 25oC
10-1
0.6 0.8 1.0 1.2 1.4
VSD, SOURCE TO DRAIN VOLTAGE (V)
ISD, SOURCE TO DRAIN CURRENT (A)
100
101PULSE DURATION = 80µs
VGS = 10V
DUTY CYCLE = 0.5% MAX VDS = 200V
VDS = 125V
VDS = 50V
ID = 2.7A
20
16
12
8
4
002 46 810
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
IRFR214, IRFU214
4-388
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see w eb site http://www.intersil.com
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FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRFR214, IRFU214
