MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features * High Collector-Emitter Sustaining Voltage - * * * 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 20 WATTS VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc Plastic Thermopad Package Pb-Free Package is Available* MAXIMUM RATINGS IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII III IIII I II IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III Rating Symbol Value Unit VCEO 300 Vdc VEB 3.0 Vdc Collector Current - Continuous IC 500 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 W mW/_C TJ, Tstg -65 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 6.25 _C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Range TO-225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM THERMAL CHARACTERISTICS YWW JE350G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Y WW JE350 G ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII II III III IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII II III III IIIIIIIIIII IIII II III III IIIIIIIIIII IIII II III III IIIIIIIIIII IIII II III III IIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII II III III IIIIIIIIIII IIII II III III IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII II III III Characteristic Symbol Min Max Unit VCEO(sus) 300 - Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO - 100 mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 100 mAdc = Year = Work Week = Device Code = Pb-Free Package OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) hFE 30 240 - ORDERING INFORMATION Device MJE350 MJE350G Package Shipping TO-225 500 Units/Box TO-225 (Pb-Free) 500 Units/Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 January, 2007 - Rev. 14 1 Publication Order Number: MJE350/D MJE350 hFE , DC CURRENT GAIN 100 1.0 TJ = 150C TJ = 25C 0.8 25C 70 50 -55 C 30 20 20 30 10 20 IC/IB = 10 VCE(sat) 50 70 100 200 300 0 500 Figure 1. DC Current Gain Figure 2. "On" Voltages 100ms dc 1.0ms 500ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 30 50 70 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 7.0 10 IC/IB = 5.0 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) V, TEMPERATURE COEFFICIENTS (mV/C) IC, COLLECTOR CURRENT (mA) 20 0.4 0.2 200 30 VBE @ VCE = 10 V IC, COLLECTOR CURRENT (mA) 1000 700 500 100 70 50 0.6 VCE = 2.0 V VCC = 10 V 10 5.0 7.0 10 300 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) 200 200 300 500 +1.2 +0.8 *APPLIES FOR IC/IB < hFE/4 +0.4 0 *qVC for VCE(sat) -0.4 -0.8 +100 C to +150C +25 C to +100C -55 C to +25C +25 C to +150C -1.2 -1.6 qVB for VBE -2.0 -55 C to +25C -2.4 -2.8 5.0 7.0 Figure 3. Active-Region Safe Operating Area 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 4. Temperature Coefficients There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. PD, POWER DISSIPATION (WATTS) 20 16 12 8.0 4.0 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) Figure 5. Power Derating http://onsemi.com 2 140 160 MJE350 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A- 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G R S 0.25 (0.010) M A M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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