I GBT M ODULE MBB200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 80 4HOLES-5.6 F E AU T RES 19.5 + * low noise due to built-in free-wheeling + G1 E1 19.5 17.5 86 74 * High speed and low saturation voltage. 0.75 7HOLES-M4 G2 E2 G3 E3 G4 E4 G5E5 0.8 G6 E6 - 7 - diode - ultra soft fast recovery diode(USFD). 8 18.5 18.5 4.5 4.5 4.5 (10) (10) (10) 18.5 4.5 (10) 4.5 (10) 6.5 TERMINAL#110 18.5 + + G1 G3 G5 E1 E3 E5 G2 E2 - Weight: 460 (g) 4.5 24.5 12 37.5 * Isolated head sink (terminal to base). G4 E4 U G6 E6 V W - TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Symbol Unit MBB200GS6AW VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V 600 20 200 400 200 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14) 1.96(20) A A W C C VRMS N.m (kgf.cm) Notes:(1)RMS Current of Diode 60Arms max. (2)Recommended Value 1.18N.m(12kgf.cm) CHARACTERISTICS Item (1) (2) (3) (3)Recommended Value 1.67N.m(17kgf.cm) (Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=600V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 1.9 2.6 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 9,700 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.3 0.5 VCC=300V ms Turn On Time ton 0.4 0.6 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=12W (4) 0.6 0.9 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.2 3.1 IF=200A,VGE=0V Reverse Recovery Time trr 0.3 IF=200A,VGE=-10V, di/dt=200A/ms ms Junction to case Rth(j-c) C/W 0.21 Thermal Impedance IGBT 0.5 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. http://store.iiic.cc/ PDE-B200GS6AW-0 TYPICAL VGE=15V14V13V12V 400 Tc=125C 300 11V 200 Pc=600W 10V Collector Current, Ic (A) Tc=25C Collector Current, Ic (A) TYPICAL VGE=15V14V13V12V 400 11V 300 200 10V 100 100 9V 9V 0 0 0 2 4 6 8 0 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 2 4 6 8 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL TYPICAL 10 10 Tc=125C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) Tc=25C 8 6 4 Ic =400A 2 Ic =200A 8 6 4 Ic =400A Ic =200A 2 0 0 0 5 10 15 0 20 10 5 15 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL TYPICAL 400 20 VGE=0 Tc=25C Tc=125C Forward Current, IF (A) Vcc=300V Ic =200A Tc=25C Gate to Emitter Voltage, VGE (V) 10 15 10 300 200 100 5 0 0 0 200 400 600 800 10000 Gate Charge, QG (nc) Gate charge characteristics 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-B200GS6AW-0 http://store.iiic.cc/ TYPICAL TYPICAL 1.5 10 Switching Time, t (ms) Switching Time, t (ms) Vcc=300V VGE=15V RG=12W TC=25C Resistive Load 1 toff 0.5 VCC=300V VGE=15V IC =200A TC=25C Resistive Load 1 toff ton ton tr tf tr tf 0 0 50 100 150 200 0.1 250 1 10 Gate Resistance, RG (W) Switching time vs. Gate resistance Collector Current, IC (A) Switching time vs. Collector current TYPICAL Vcc=300V VGE=15V RG=12W TC=125C Inductive Load 15 Etoff Eton 10 5 TYPICAL 100 Switching Loss, Eton, Etoff (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 20 VCC=300V VGE=15V IC =200A TC=125C Inductive Load Etoff Eton 10 Err Err 0 1 0 50 100 150 200 250 Transient Thermal Impedance, Rth(j-c) (C/W) VGE=15V RG=12W TC125C 100 10 1 0.1 0 200 400 1 Diode IGBT 0.1 0.01 0.001 0.001 600 100 Gate Resistance, RG (W) Switching loss vs. Gate resistance TYPICAL 1000 10 1 Collector Current, IC (A) Switching loss vs. Collector current Collector Current, Ic (A) 100 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-B200GS6AW-0 http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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