PDE-B200GS6AW-0
IIIGGGBBBTTT MMMOOODDDUUULLLEEE
MBB200GS6AW
Silicon N-channel IGBT OUTLINE DRAWING
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RRR SSS
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item Symbol Unit MBB200GS6AW
Collector Emitter Voltage VCES V 600
Gate Emitter Voltage VGES V ±20
Collector Current DC IC 200
1ms ICp A 400
Forward Current DC IF 200 (1)
1ms IFM A 400
Collector Power Dissipation Pc W 600
Junction Temperature Tj °C -40 ~ +150
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage VISO VRMS 2,500(AC 1 minute)
Screw Torque Terminals - 1.37(14) (2)
Mounting -N.m
(kgf.cm) 1.96(20) (3)
Notes:(1)RMS Current of Diode 60Arms max.
(2)Recommended Value 1.18N.m(12kgf.cm) (3)Recommended Value 1.67N.m(17kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item Symbol Unit Min. Typ. Max. Test Conditions
Collector Emitter Cut-Off Current I CES mA - - 1.0 VCE=600V,VGE=0V
Gate Emitter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage VCE(sat) V - 1.9 2.6 IC=200A,VGE=15V
Gate Emitter Threshold Voltage VGE(TO) V - - 10 VCE=5V, IC =200mA
Input Capacitance Cies pF - 9,700 - VCE=10V,VGE=0V,f=1MHz
Rise Time t
r - 0.3 0.5 VCC=300V
Turn On Time ton - 0.4 0.6 RL=1.5W
Fall Time t
f - 0.25 0.35 RG=12W (4)
Switching Times
Turn Off Time toff
ms
- 0.6 0.9 VGE=±15V
Peak Forward Voltage Drop VFM V - 2.2 3.1 IF=200A,VGE=0V
Reverse Recovery Time trr ms - - 0.3 IF=200A,VGE=-10V, di/dt=200A/ms
IGBT Rth(j-c) - - 0.21
Thermal Impedance FWD Rth(j-c) °C/W - - 0.5 Junction to case
Notes:(4) RG value is the tes t condition’s value for decision of the switching times, not recommended value.
Determine the suitable R
G value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
94
80
8
4HOLES-φ5.6
7HOLES-M4
0.75
19.5
86
74
18.5 18.518.518.5
7
φ0.8
4.5 4.5
4.5 4.5 4.5 4.5
(10)
(10)
(10)
(10)
(10)
24.5 12
37.5
TERMINAL#110
17.5
19.5
6.5
+ +
--
G1 E1 G2 E2 G3 E3 G4 E4 G5E5 G6 E6
Unit in mm
Weight: 460 (g) TERMINALS
G1
G2
E1
E2
U
G3
G4
E3
E4
V
G5
G6
E5
E6
W
+ +
- -
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VGE=15V14V13V12V
300
400
0 2 4 6 8 10
200
100
0
400
200
300
100
0
11V
TYPICAL
10V
9V
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic =200A
Ic =400A
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Ic =400A
Ic =200A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
00 200 400 600 800 10000
TYPICAL TYPICAL
Vcc=300V
Ic =200A
Tc=25°C
Gate to Emitter Voltage, V
GE
(V)
Gate Charge, QG (nc)
Gate charge characteristics
300
400
200
100
00 1 2 3 4 5
Forward Current, I
F
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
0 2 4 6 8 10
11V
TYPICAL
10V
9V
Tc=125°C
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-B200GS6AW-0
Tc=25°C
VGE=15V14V13V12V
VGE=0
Tc=25°C
Tc=125°C
Tc=125°C
Tc=25°C
Pc=600W
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1.5
1
0.5
00 50 150100 200 250
TYPICAL
TYPICAL
TYPICAL
TYPICAL
Switching Time, t (ms)
Collector Current, IC (A)
Switching time vs. Collector current
10
15
20
5
0 0 50 150100 200 250
Switching Loss, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current, IC (A)
Switching loss vs. Collector current
10
1
0.1 1 10 100
Switching Time, t (ms)
Gate Resistance, RG (W)
Switching time vs. Gate resistance
tr
tf
ton
toff
VCC=300V
VGE=±15V
IC =200A
TC=25°C
Resistive Load
TYPICAL
100
10
1
1 10 100
Switching Loss, Et
on
, Et
off
(mJ/pulse)
Gate Resistance, RG (W)
Switching loss vs. Gate resistance
VCC=300V
VGE=±15V
IC =200A
TC=125°C
Inductive Load
Err
Err
Etoff
Vcc=300V
VGE=±15V
RG=12W
TC=125°C
Inductive Load
1000
100
10
1
0.1 0 200 400 600
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.001 0.01 0.1 1 10
Trans ie nt Th er m al I mpe da nc e, R
th(j-c)
(°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE=±15V
RG=12W
TC£125°C
PDE-B200GS6AW-0
tf
tr
ton
toff
Eton
Vcc=300V
VGE=±15V
RG=12W
TC=25°C
Resistive Load
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change without prior notice to improve product characteristics. Before ordering,
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