2N6283 & 2N6284 NPN Darlington Power Silicon Transistor Rev. V3 Features * Available in JAN, JANTX, JANTXV per MIL-PRF-19500/504 * TO-3 (TO-204AA) Package Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 100 mAdc 2N6283 2N6284 V(BR)CEO Vdc 80 100 -- Collector - Emitter Cutoff Current VCE = 40 Vdc, 2N6283 VCE = 50 Vdc, 2N6284 ICEO mAdc -- 1.0 Collector - Emitter Cutoff Current VCE = 80 Vdc, VBE = -1.5 Vdc, 2N6283 VCE = 100 Vdc, VBE = -1.5 Vdc, 2N6284 ICEX mAdc -- 0.01 Collector - Base Cutoff Current VEB = 7 Vdc IEBO mAdc -- 2.5 Forward Current Transfer Ratio IC = 1 Adc, VCE = 3 Vdc IC = 10 Adc, VCE = 3 Vdc IC = 20 Adc, VCE = 3 Vdc HFE - 1500 1250 500 18000 Collector - Emitter Saturation Voltage IC = 20 Adc, IB = 200 mAdc IC = 10 Adc, IB = 40 mAdc VCE(SAT) Vdc -- 3.0 2.0 Base - Emitter Saturation Voltage IC = 20 Adc, IB = 200 mAdc VBE(SAT) Vdc -- 4.0 Base - Emitter Voltage IC = 10 Adc, IB = 3 Vdc VBE Vdc -- 2.8 IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz | HFE | - 8 80 Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz HFE - 700 -- Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1 MHz COBO pF -- 350 Turn-On Time VCC = 30 Vdc; IC = 10 Adc; IB1 = 40 mAdc TON s -- 2 Turn-Off Time VCC = 30 Vdc; IC = 10 Adc; IB1 = IB2 = 40 mAdc TOFF s -- 10 Off Characteristics On Characteristics 1 Dynamic Characteristics Magnitude of Common Small-Signal Short-Circuit Forward Current Transfer Ratio Switching Characteristics Safe Operating Area DC Tests: Test 1: Test 2: Test 3: 1 TC = +25 C, I Cycle, t = 1.0 s VCE = 8.75 Vdc, IC = 20 Adc VCE = 30 Vdc, IC = 5.8 Adc VCE = 80 Vdc, IC = 100 mAdc VCE = 100 Vdc, IC = 100 mAdc 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N6283 & 2N6284 NPN Darlington Power Silicon Transistor Rev. V3 Absolute Maximum Ratings Ratings Symbol 2N6283 2N6284 Units Collector - Emitter Voltage VCEO 80 100 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 7 Vdc Collector Current IC 20 Adc Base Current IB 0.5 Adc Total Power Dissipation @ TA = +25C2 @ TA = +100C PT 175 87.5 W Operating & Storage Temperature Range TOP, TSTG -65 to +200 C 2. Derate linearly @ 1 mW / C for TA >+25C. Thermal Characteristics Characteristics Symbol Max. Value Thermal Resistance, Junction to Case RJC 0.857C/W 2 VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N6283 & 2N6284 NPN Darlington Power Silicon Transistor Rev. V3 Outline Drawing 3 VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N6283 & 2N6284 NPN Darlington Power Silicon Transistor Rev. V3 VPT Components All rights reserved. Information in this document is provided in connection with VPT Components' products. 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