NPN Darlington Power Silicon Transistor
Rev. V3
2N6283 & 2N6284
1
1
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1
Features
• Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/504
• TO-3 (TO-204AA) Package
Electrical Characteristics
Parameter Test Conditions Symbol Units Min. Max.
Off Characteristics
Collector - Emitter Breakdown Voltage
IC = 100 mAdc
2N6283
2N6284
V(BR)CEO Vdc
80
100
—
Collector - Emitter Cutoff Current VCE = 40 Vdc, 2N6283
VCE = 50 Vdc, 2N6284 ICEO mAdc — 1.0
Collector - Emitter Cutoff Current VCE = 80 Vdc, VBE = -1.5 Vdc, 2N6283
VCE = 100 Vdc, VBE = -1.5 Vdc, 2N6284 ICEX mAdc — 0.01
Collector - Base Cutoff Current VEB = 7 Vdc IEBO mAdc — 2.5
On Characteristics1
Forward Current Transfer Ratio
IC = 1 Adc, VCE = 3 Vdc
IC = 10 Adc, VCE = 3 Vdc
IC = 20 Adc, VCE = 3 Vdc
HFE -
1500
1250
500
18000
Collector - Emitter Saturation Voltage IC = 20 Adc, IB = 200 mAdc
IC = 10 Adc, IB = 40 mAdc VCE(SAT) Vdc — 3.0
2.0
Base - Emitter Saturation Voltage IC = 20 Adc, IB = 200 mAdc VBE(SAT) Vdc — 4.0
Base - Emitter Voltage IC = 10 Adc, IB = 3 Vdc VBE Vdc — 2.8
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz | HFE | - 8 80
Small-Signal Short-Circuit
Forward Current Transfer Ratio IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz HFE - 700 —
Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF — 350
Switching Characteristics
Turn-On Time VCC = 30 Vdc; IC = 10 Adc; IB1 = 40 mAdc TON µs — 2
Turn-Off Time VCC = 30 Vdc; IC = 10 Adc; IB1 = IB2 = 40 mAdc TOFF µs — 10
Safe Operating Area
DC Tests: TC = +25 °C, I Cycle, t = 1.0 s
Test 1: VCE = 8.75 Vdc, IC = 20 Adc
Test 2: VCE = 30 Vdc, IC = 5.8 Adc
Test 3: VCE = 80 Vdc, IC = 100 mAdc
VCE = 100 Vdc, IC = 100 mAdc
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
NPN Darlington Power Silicon Transistor
Rev. V3
2N6283 & 2N6284
2
2
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2
Absolute Maximum Ratings
2. Derate linearly @ 1 mW / °C for TA >+25°C.
Ratings Symbol 2N6283 2N6284 Units
Collector - Emitter Voltage VCEO 80 100 Vdc
Collector - Base Voltage VCBO 80 100 Vdc
Emitter - Base Voltage VEBO 7 Vdc
Collector Current IC 20 Adc
Base Current IB 0.5 Adc
Total Power Dissipation
@ TA = +25°C2
@ TA = +100°C
PT
175
87.5
W
Operating & Storage Temperature Range TOP, TSTG -65 to +200 °C
Thermal Characteristics
Characteristics Symbol Max. Value
Thermal Resistance, Junction to Case RθJC 0.857°C/W
NPN Darlington Power Silicon Transistor
Rev. V3
2N6283 & 2N6284
3
3
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
3
Outline Drawing
NPN Darlington Power Silicon Transistor
Rev. V3
2N6283 & 2N6284
4
4
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
4
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