©2010 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
October 2010
Motion-SPMTM
FNA41060/B2
Smart Power Module
Features
• 600V-10A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Easy PCB layout due to built-in bootstrap diode and VS out-
put
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Built-in thermistor for over-temperature monitoring
• Isolation rating of 2000Vrms/min.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and refrig-
erator
General Description
It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and refrigerator. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out protection,
short-circuit protection, and temperature monitoring. The high
speed built-in HVIC provides opto-coupler-less single-supply
IGBT gate driving capability that further reduce the overall size
of the inverter system design. Each phase current of inverter
can be monitored separately due to the divided negative dc ter-
minals.
Additional Information
For further infomation, please see AN-9070 and FEB305-001 in
http://www.fairchildsemi.com
Figure 1.
2www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Integrated Power Functions
• 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS compatible, Schmitt trigger input
Pin Configuration
Figure 2.
Top View
VTH(1)
RTH(2)
P(3)
U(4)
V(5)
W(6)
NU(7)
NV(8)
NW(9)
VB(U)(26)
VS(U)(25)
VB(V)(24)
VS(V)(23)
VB(W)(22)
VS(W)(21)
IN(UH)(20)
IN(VH)(19)
IN(WH)(18)
VCC(H)(17)
COM(15)
IN(UL)(14)
IN(VL)(13)
IN(WL)(12)
VFO(11)
CSC(10)
VCC(L)(16)
Case Temperature (TC)
Detecting Point
VTH(1)
RTH(2)
P(3)
U(4)
V(5)
W(6)
NU(7)
NV(8)
NW(9)
VB(U)(26)
VS(U)(25)
VB(V)(24)
VS(V)(23)
VB(W)(22)
VS(W)(21)
IN(UH)(20)
IN(VH)(19)
IN(WH)(18)
VCC(H)(17)
COM(15)
IN(UL)(14)
IN(VL)(13)
IN(WL)(12)
VFO(11)
CSC(10)
VCC(L)(16)
Case Temperature (TC)
Detecting Point
3www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Pin Descriptions
Pin Number Pin Name Pin Description
1 VTH Thermistor Bias Voltage
2 RTH Series Resistor for the Use of Thermistor (Temperature Detection)
3 P Positive DC–Link Input
4 U Output for U Phase
5 V Output for V Phase
6 W Output for W Phase
7 NUNegative DC–Link Input for U Phase
8 NVNegative DC–Link Input for V Phase
9 NWNegative DC–Link Input for W Phase
10 CSC Capacitor (Low-pass Filter) for Short-Current Detection Input
11 VFO Fault Output
12 IN(WL) Signal Input for Low-side W Phase
13 IN(VL) Signal Input for Low-side V Phase
14 IN(UL) Signal Input for Low-side U Phase
15 COM Common Supply Ground
16 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
17 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
18 IN(WH) Signal Input for High-side W Phase
19 IN(VH) Signal Input for High-side V Phase
20 IN(UH) Signal Input for High-side U Phase
21 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving
22 VB(W) High-side Bias Voltage for W Phase IGBT Driving
23 VS(V) High-side Bias Voltage Ground for V Phase IGBT Driving
24 VB(V) High-side Bias Voltage for V Phase IGBT Driving
25 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving
26 VB(U) High-side Bias Voltage for U Phase IGBT Driving
4www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
Note:
1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT.
2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions.
3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
Figure 3.
COM
VCC
IN(WL)
IN(VL)
IN(UL)
VFO
C(SC) OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W(6)
V (5)
U(4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(12) IN(WL)
(13) IN(VL)
(14) IN(UL)
(15) COM
UVB
OUT(UH)
UVS
IN(UH)
WVS
WVS
OUT(WH)
IN(WH)
COM
VCC
WVB
OUT(VH)
VVS
IN(VH)
VTH (1)
(19) IN(VH)
(20) IN(UH)
(21) VS(W)
(22) VB(W)
(17) VCC(H)
(18) IN(WH)
RTH (2)
Thermister
UVS
VVS
VVB
(16) VCC(L)
5www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Units
VPN Supply Voltage Applied between P- NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P- NU, NV, NW500 V
VCES Collector-emitter Voltage 600 V
± ICEach IGBT Collector Current TC = 25°C, TJ ＜150°C 10 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜150°C, Under 1ms Pulse
Width
20 A
PCCollector Dissipation TC = 25°C per One Chip 34 W
TJOperating Junction Temperature (Note 1) -40 ~ 150 °C
Symbol Parameter Conditions Rating Units
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High-side Control Bias
Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3~VCC+0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V
IFO Fault Output Current Sink Current at VFO Pin 1 mA
VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V
Symbol Parameter Conditions Rating Units
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Units
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2ms
400 V
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
2000 Vrms
Symbol Parameter Conditions Min. Typ. Max. Units
Rth(j-c)Q Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module) - - 3.6 °C/W
Rth(j-c)F Inverter FWD part (per 1/6 module) - - 4.8 °C/W
6www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Units
VCE(SAT) Collector-Emitter Saturation
Voltage
VCC = VBS = 15V
VIN = 5V
IC = 10A, TJ = 25°C - 1.7 2.2 V
VFFWD Forward Voltage VIN = 0V IF = 10A, TJ = 25°C - 1.8 2.3 V
HS tON Switching Times VPN = 300V, VCC = VBS = 15V, IC = 10A
TJ = 25°C
VIN = 0V « 5V, Inductive Load
(Note 3)
0.40 0.70 1.20 ms
tC(ON) - 0.20 0.45 ms
tOFF - 0.75 1.25 ms
tC(OFF) - 0.25 0.50 ms
trr - 0.15 - ms
LS tON VPN = 300V, VCC = VBS = 15V, IC = 10A
TJ = 25°C
VIN = 0V « 5V, Inductive Load
(Note 3)
0.40 0.70 1.20 ms
tC(ON) - 0.20 0.45 ms
tOFF - 0.75 1.25 ms
tC(OFF) - 0.25 0.50 ms
trr - 0.15 - ms
ICES Collector-Emitter
Leakage Current
VCE = VCES - - 1 mA
VCE IC
VIN
tON
tC(ON)
VIN(O N)
10% IC
10% VC E
90% IC
100% IC
trr
100% IC
VCE
IC
VIN
tOFF
tC(OFF)
VIN (O FF) 10% VC E 10% IC
(a) turn-on (b) turn-off
7www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Switching Loss (Typical)
Figure 5. Switching Loss Characteristics
Control Part
Note:
4. Short-circuit current protection is functioning only at the low-sides.
5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application.
Symbol Parameter Conditions Min. Typ. Max. Units
IQCCH Quiescent VCC Supply
Current
VCC(H) = 15V, IN(UH,VH,WH) = 0V VCC(H) - COM - - 0.10 mA
IQCCL VCC(L) = 15V, IN(UL,VL, WL) = 0V VCC(L) - COM - - 2.65 mA
IPCCH Operating VCC Supply
Current
VCC(H) = 15V, fPWM = 20kHz,
duty=50%, applied to one PWM
signal input for High-side
VCC(H) - COM - - 0.15 mA
IPCCL VCC(L) = 15V, fPWM = 20kHz,
duty=50%, applied to one PWM
signal input for Low-side
VCC(L) - COM - - 3.65 mA
IQBS Quiescent VBS Supply
Current
VBS = 15V, IN(UH, VH, WH) = 0V VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 0.30 mA
IPBS Operating VBS Supply
Current
VCC = VBS = 15V, fPWM = 20kHz,
duty=50%, applied to one PWM
signal input for High-side
VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 2.00 mA
VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kW to 5V Pull-up 4.5 - - V
VFOL VSC = 1V, VFO Circuit: 4.7kW to 5V Pull-up - - 0.5 V
VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V
UVCCD
Supply Circuit
Under-Voltage
Protection
Detection Level 10.5 - 13.0 V
UVCCR Reset Level 11.0 - 13.5 V
UVBSD Detection Level 10.0 - 12.5 V
UVBSR Reset Level 10.5 - 13.0 V
tFOD Fault-out Pulse Width 30 - - ms
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),
IN(WL) - COM
- - 2.6 V
VIN(OFF) OFF Threshold Voltage 0.8 - - V
RTH Resistance of
Thermister
@TTH=25°C, (Note 5) - 47 - kW
@TTH=100°C - 2.9 - kW
01234567891011
0
100
200
300
400
500
600
700
Inductive Load, VPN=300V, VCC=15V, TJ=25℃
IGBT Turn-ON, Eon
IGBT Turn-OFF, Eoff
FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
01234567891011
0
100
200
300
400
500
600
700
Inductive Load, VPN=300V, VCC=15V, TJ=150℃
IGBT Turn-ON, Eon
IGBT Turn-OFF, Eoff
FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
8www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Figure. 6. R-T Curve of The Built-in Thermistor
Bootstrap Diode Part
Note:
6. Built in bootstrap diode includes around 15 Ωresistance characteristic.
Figure 7. Built in Bootstrap Diode Characteristic
Symbol Parameter Conditions Min. Typ. Max. Units
VFForward Voltage IF = 0.1A, TC = 25°C - 2.5 - V
trr Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns
-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120
0
50
100
150
200
250
300
350
400
450
500
550
600 R-T Curve
Resistance[kW]
Temperature TTH[ ]℃
50 60 70 80 90 100 110 120
0
4
8
12
16
20
Resistance[kW]
Temperature [ ]℃
R-T Curve in 50 ~ 125℃ ℃
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built in Bootstrap Diode VF-IF Characteristic
TC=25℃
IF [A]
VF [V]
9www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Recommended Operating Conditions
Note:
7. SPM might not make response if input pulse width is less than the recommanded value.
Note:
8. The allowable output current value may be different from the actual application.
Figure 8. Allowable Maximum Output Current
Package Marking and Ordering Information
Symbol Parameter Conditions Value Units
Min. Typ. Max.
VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L)-COM 13.5 15 16.5 V
VBS High-side Bias Voltage Applied between VB(U)-VS(U), VB(V)-VS(V),VB(W)-VS(W) 13.0 15 18.5 V
dVCC/dt,
dVBS/dt
Control supply variation -1 - 1 V/ms
tdead Blanking Time for
Preventing Arm-short
For Each Input Signal 1.5 - - ms
fPWM PWM Input Signal -40°C ＜ TJ ＜ 150°C - - 20 kHz
VSEN Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including surge voltage)
-4 4 V
PWIN(ON) Minimun Input Pulse
Width
(Note 7) 0.5 - - ms
PWIN(OFF) 0.5 - -
Device Marking Device Package Reel Size Tape Width Quantity
FNA41060 FNA41060 SPM26-AAA - - 12
FNA41060B2 FNA41060B2 SPM26-AAC - - 12
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
0
1
2
3
4
5
6
7
8
9
10
Allowable Maximum Output Current
VDC=300V, VCC=VBS=15V
TJ ＜ 150℃ , TC ≤ 125℃
M.I.=0.9, P.F.=0.8
Sinusoidal PWM
fSW=15kHz
fSW=5kHz
IOrms [Arms]
Case Temperature, TC [℃]
10 www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Mechanical Characteristics and Ratings
Figure 9. Flatness Measurement Position
Note:
9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
10. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged.
The Pre-Screwing torque is set to 20~30% of maximum torque rating.
Figure 10. Mounting Screws Torque Order
Parameter Conditions Limits Units
Min. Typ. Max.
Device Flatness Note Figure 9 0 - +120 mm
Mounting Torque Mounting Screw: - M3
Note Figure 10
Recommended 0.7N•m 0.6 0.7 0.8 N•m
Recommended 7.1kg•cm 6.2 7.1 8.1 kg•cm
Weight - 11 - g
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
11 www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Time Charts of SPMs Protective Function
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
Figure 12. Under-Voltage Protection (High-side)
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1
a3
a2
a4
a6
a5
a7
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1
b3
b2 b4
b6
b5
High-level (no fault output)
12 www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Input “L” : IGBT OFF state.
c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7 : IGBT OFF state
Figure 13. Short-Circuit Current Protection (Low-side Operation only)
Input/Output Interface Circuit
Note:
1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the sig-
nal voltage drop at input terminal.
2) The logic input is compatible with standard CMOS outputs.
Figure 14. Recommended CPU I/O Interface Circuit
Lower arms
control input
Output Current
Sensing Voltage
of the shunt
resistance
Fault Output Signal
SC Reference Voltage
CR circuit time
constant delay
SC
Protection
Circuit state SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
Internal IGBT
Gate-Emitter Voltage
MCU
COM
5V-Line (MCU or Control power)
, ,
IN(UL) IN(VL) IN(WL)
, ,
IN(UH) IN(VH) IN(WH)
VFO
RPF=10kΩSPM
13 www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)
2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.
3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. Please refer
to Figure14.
4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.
5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention
of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. (Recommended RS=100 Ω, CPS=1nF)
6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2ms.
8) Each capacitor should be mounted as close to the pins of the SPM as possible.
9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1~0.22mF between the P&GND pins is recommended.
10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W)
12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
13) For the detailed information, please refer to the AN-9070 and FEB305-001.
Figure 15. Typical Application Circuit
Fault
15V line
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
RPF
CBPF
RS
M
VDC
CDCS
Gating UH
Gating VH
Gating WH
Gating UL
Gating VL
Gating WL
CPF
M
C
U
RSW
RSV
RSU
U-Phase Current
V-Phase Current
W-Phase Current
RF
COM
VCC
IN(WL)
IN(VL)
IN(UL)
VFO
CSC
OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W (6)
V (5)
U (4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V )
(24) VB(V )
(10) CSC
(11) VFO
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
(20) IN(UH)
(19) IN(VH)
(21) VS(W)
(22) VB(W)
(17) VCC(H)
(18) IN(WH)
Input Signal for
Short-Circuit Protection
CSC
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS
CPS CPS
IN(WH)
IN(VH)
IN(UH)
COM
VCC
VS(W)
VS(V)
VS(U)
VS(V)
VS(U)
VS(W)
VB(U)
VB(V)
VB(W)
(15) COM
OUT(WH)
OUT(VH)
OUT(UH)
LVIC
HVIC
(1) VTH
(2) RTH
RTH THERMISTOR
Temp. Monitoring
(16) VCC(L)
5V line
CSPC05 CSP05
14 www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Detailed Package Outline Drawings(FNA41060)
15 www.fairchildsemi.com
FNA41060/B2 Rev. C
FNA41060/B2 Smart Power Module
Detailed Package Outline Drawings(FNA41060B2, Long Terminal Type)
Rev. I38
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
mSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
