2PB709ARW - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation 2002 Jun 26

DISCRETE SEMICONDUCTORS

2PB709AW

PNP general purpose transistor

ook, halfpage

M3D114

2002 Jun 26 2

Philips Semiconductors Product speciﬁcation

PNP general purpose transistor 2PB709AW

FEATURES

•High collector current (max. 100 mA)

•Low collector-emitter saturation voltage (max. 500 mV).

APPLICATIONS

•General purpose switching and amplification.

DESCRIPTION

PNP transistor in an SC-70 (SOT323) plastic package.

NPN complement: 2PD601AW

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

2PB709AQW N5*

2PB709ARW N7*

2PB709ASW N9*

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM048

Top view

Fig.1 Simplified outline SC-70 (SOT323)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. For mounting conditions, see

“Thermal considerations and footprint design for SOT323 in the General Part of Data

Handbook SC18”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−45 V

VCEO collector-emitter voltage open base −−45 V

VEBO emitter-base voltage open collector −−6V

Ccollector current (DC) −−100 mA

ICM peak collector current −−200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2002 Jun 26 3

Philips Semiconductors Product speciﬁcation

PNP general purpose transistor 2PB709AW

THERMAL CHARACTERISTICS

Note

1. For mounting conditions, see

“Thermal considerations and footprint design for SOT323 in the General Part of Data

Handbook SC18”.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current IE= 0; VCB =−45 V −−10 nA

IE= 0; VCB =−45 V; Tj= 150 °C−−5µA

EBO emitter-base cut-off current IC= 0; VEB =−5V −−10 nA

hFE DC current gain IC=−2 mA; VCE =−10 V

2PB709AQW 160 260

2PB709ARW 210 340

2PB709ASW 290 460

VCEsat collector-emitter saturation voltage IC=−100 mA; IB=−10 mA;

note 1 −−500 mV

Cccollector capacitance IE=i

e= 0; VCB =−10 V;

f = 1 MHz −5pF

Ttransition frequency IC=−1 mA; VCE =−10 V;

f = 100 MHz

2PB709AQW 60 −MHz

2PB709ARW 70 −MHz

2PB709ASW 80 −MHz

2002 Jun 26 4

Philips Semiconductors Product speciﬁcation

PNP general purpose transistor 2PB709AW

PACKAGE OUTLINE

UNIT A1

max bpcD Ee

pQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT323

97-02-28

2002 Jun 26 5

Philips Semiconductors Product speciﬁcation

PNP general purpose transistor 2PB709AW

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2002 Jun 26 6

Philips Semiconductors Product speciﬁcation

PNP general purpose transistor 2PB709AW

NOTES

2002 Jun 26 7

Philips Semiconductors Product speciﬁcation

PNP general purpose transistor 2PB709AW

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Contact information

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Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jun 26 Document order number: 9397 750 09758