NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO 90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCER 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage (Open Collector), VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, IC1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Base Current, IB100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA 125K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Tab, RthJTAB 10K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 60V, IE = 0 – – 100 nA
VCB = 60V, IE = 0, TJ = +150°C– – 50 µA
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 80 – – V
V(BR)CES IC = 10µA, VBE = 0 90 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V
Collector–Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 2 – – 250 mV
IC = 500mA, IB = 50mA, Note 2 – – 500 mV
Base–Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA, Note 2 – – 1.0 V
IC = 500mA, IB = 50mA, Note 2 – – 1.2 V
Note 2. Measured under pulsed conditions.
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Current Gain hFE VCE = 5V, IC = 100µA, Note 2 30 – –
VCE = 5V, IC = 100mA, Note 2 100 –300
VCE = 5V, IC = 500mA, Note 2 50 – –
Transition Frequency fTVCE = 10V, IC = 50mA, f = 35MHz 100 – – MHz
Collector Capacitance
NTE2428 CcVCB = 10V, IE = Ie = 0, f = 1MHz – – 12 pF
NTE2429 – – 20 pF
Emitter Capacitance
NTE2428 CeVEB = 500mV, IC = Ic = 0, f = 1MHz – – 90 pF
NTE2429 – – 120 pF
Turn–On Time
NTE2428 ton ICon = 100mA, IBon = –IBoff = 5mA – – 250 ns
NTE2429 – – 500 ns
Turn–Off Time
NTE2428 toff – – 1000 ns
NTE2429 – – 650 ns
Note 2. Measured under pulsed conditions.
.067 (1.7)
.174 (4.42)
.118 (3.0)
.059 (1.5)
.059 (1.5)
.020 (.508)
.015 (0.32)
.041
(1.05)
Min
.096
(2.46)
.161
(4.1)
ECB
Bottom View
