FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR eee FAIRCHILD Cn emunue A Schiumberger Company 84 DEB uea674 ob27Sbe ay OR 84D 27562 OD 2N3946/FTSO3946 73> // NPN Small Signal General Purpose Amplifier & Switch Vceo ... 40 V (Min) PACKAGE 2N3946 TOI ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO3946 TO236AA Temperatures 2N FTSO Storage Temperature -65C to 200C -5G to 150C Operating Junction Temperature 176C 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N FTSO 25C Ambient Temperature 0.36 mW 0.350 W* 25 C Case Temperature 1.2W Voltages & Currents Vceo Collector to Emitter Voltage 40V 40V (Note 4) - Vcso Collector to Base Voltage 60 V 60 V Veo Emitter to Base Voltage 6.0 V 6.0 V lc Collector Current 200 mA 200 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown Voltage 40 Vv Io = 10 mA, Ip = 0 (Note 4) BVcso Collector to Base Breakdown Voltage 60 Vv Ic = 10 pA, le = 0 BVeso Emitter to Base Breakdown Voltage 6.0 v le = 10 pA, Ic = 9 loex Collector Cutoff Current 10 nA Vce = 40 V, Vea = 3.0 V 15 pA Voce = 40 V, Ven =3.0V, Ta= 150C lat Base Cutoff Current 25 nA Voce = 40 V, Ves = 3.0 V hre DC Current Gain (Note 5) 30 lo = 0.1 MA, Vee = 1.0 V 45 Io = 1.0 MA, Voe = 1.0 V 50 150 Ig = 10 MA, Vee = 1.0 V 20 Ic = 50 MA, Vee = 1.0 V Veeisat) Collector to Emitter Saturation 0.2 Vv ic = 10 mA, le = 1.0 MA Voltage (Note 5) 0.3 v Ic = 50 mA, Is = 5.0 MA Vectsat) Base to Emitter Saturation 0.6 0.9 Vv Ilo = 10 mA, Ip = 1.0 MA : Voltage (Note 5) 4.0 Vv lc = 50 MA, lp = 5.0 MA NOTES: 1. These ratings are limiting values above which the serviceabllity of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW?? C); junotion-to-ambient thermal! resistance of 200 C/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 957 C/W (derating tactor of 2.8 mW/C). Pulse conditions: length = 300 4s; duty cycle = 2%. For product family characteristic curves, refer to Curve Set 7144, Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. "OAS Rating refers to a high current point where collector to emitter voltage is lowest. eS 3-282 haFAIRCHILD SEMICONDUCTOR ences 3469674 FAIRCHILD SEMICONDUCTOR 2N3946/FTSO3946 84D 27563 D T- 35-11 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC } MIN | MAX {| UNITS TEST CONDITIONS Cob Output Capacitance 4.0 pF Ves = 10 V, le = 0, f = 100 kHz Ci Input Capacitance 8.0 pF Ves = 1.0 V, Ic =O, f = 100 kHz Nite Current Gain Bandwidth Product 2.5 Io = 10 mA, Vee = 20 V, f = 100 MHz hie Input impedance 0.6 | 6.0 kX fig = 1.0 mA, Vee = 10 V, f = 1.0 kHz Noe Output Admittance 1.0 30 pmhos | lc = 1.0 mA, Vee = 10 V, f = 1.0 KHz Ne Voltage Feedback Ratio 10 x10-* | Ic = 1.0 MA, Vce = 10 V, f = 1.0 kHz ta Delay Time (test circuit no. 526) 35 ns le = 10 MA, Veco = 3.0 V, ley = 1.0 MA, Veciorr = 0.5V tr Rise Time (test circuit no. 526) 300 ns le = 10 MA, Veo = 3.0 V, ler = 1.0 MA, Veeorn = 0.5V ts Storage Time (test circuit no. 527) 300 ns lo = 10 MA, Veco = 3.0 V, les = le2 =1.0mA tt Fall Time (test circuit no. 527) 76 ns le = 10 MA, Vec = 3.0 V, lay = lea = 1.0 mA fp'Ce Collector to Base Time Constant 200 ps lc = 10 MA, Vee = 20V, f =31.8 MHz NF Noise Figure 5.0 dB lc = 100 HA, Vee = 5.0 V, Re = 1.0 kQ, f = 10 Hz to 15.7 kHz 3-283 84 DE) 3465L74 0027543 0 lyFAIRCHILD SEMICONDUCTOR 8&4 DE 3469674 OOe?7Sb4 1 m _-3489674 FAIRCHILD SEMICONDUCTOR e4p 27564 D 2N3962/PN3962 727-23 FTSO3962 PNP Low Level Low Noise De FAIRCHILD Pe A Schlumberger Company Amplifiers Vceo... -60V (Min) PACKAGE Excellent Beta Linearity from 1.0 vA to 50 mA 2N3962 TO-18 PN3962 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1} FTSO3962 TO-236AA/AB Temperatures PN/FTSO 2N Storage Temperature -55C to 150 C -65 C to 200C ' Operating Junction Temperature 150C 175C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N PN FTSO 25C Ambient Temperature 0.36 W 0,625 W 0.350 W* 25C Case Temperature 12W 1.0W Voltages & Currents Vceo Collector to Emitter Voltage -60V (Note 4) Vcao Collector to Base Voltage -60 V Vero Emitter to Base Voltage 6.0 V . lo Collector Current 200 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN |MAX j UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage | -60 Vv Ic = 10 pA, le = 0 BVeso Emitter to Base Breakdown Voltage -6.0 Vv le = 10 pA, le =O BVces Collector to Emitter Breakdown Voltage, 60 Vv Io = 10 pA, lp =O leeo Emitter Cutoff Current 10 nA | Vea=-~4.0V, lc =0 Ices Collector Reverse Current 10 nA Voce = 50 V, Ven = 0 10 pA Vor = 50 V, Ves = 0, Ta = 150C fre DC Current Gain 60 Io = 1.0 pA, Vee = 5.0 V 100 | 300 lo = 10 pA, Vce = ~5.0 V 100 Io = 100 pA, Vor = 5.0 V 100 | 450 I = 1.0 MA, Voce = -5.0 V 40 le = 10 pA, Voe=5.0 V, Ta = 55C 600 Io =1.0 MA, Vee =5.0V, Ta = 100C NOTES: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/? C); juaction-te-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (erating factor of 2.8 mW/C), Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 ys; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T219, Package mounted on 99.5% alumina 8 mm x 8mm x 0.6 mm. De a a 3-284FAIRCHILD SEMICONDUCTOR cane Wee ay DE Baued74 ooe7sks 4 IRCHILD SEMICONDUCTOR 2N3962/PN3962/FTSO3962 84D 27565 D T- 24-23 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN |MAX | UNITS TEST CONDITIONS hee DC Pulse Current Gain (Note 5) 100 le =10 mA, Vce = -5.0 V 90 lo = 50 mA, Vee =-5.0V 45 Ic =50 MA, Vce=5.0 V, Ta=55C Veetsat) Collector to Emitter Saturation Voltage 0.25 Vv le = 10 mA, lp = 0.5 MA Veetsat Collector to Emitter Saturation Voltage 0.4 Vv lc = 50 mA, la = 5.0mMA (Note 5) Veztsatt Base to Emitter Saturation Voltage -0.9 Vv lc = 10 MA, la = 0.5 MA Vecisan Base to Emitter Saturation Voltage 0.95 Vv Ic = 50 mA, fs = 5.0 MA (Note 5) Veeotus) | Collector to Emitter Sustaining Voltage -60 Vv lo = 5.0 mA, lp =0 (Notes 4 & 5) Cop Open Circuit Output Capacitance 6.0 pF Ves = ~5.0 V, le = 0, f = 1.0 MHz Cv Open Circuit Input Capacitance 15 pF Ves = 5.0 V, lo = 0, f = 1.0 MHz hte High Frequency Current Gain 2.0 8.0 lo =0.5 mA, Voce =5.0 V, f = 20MHz Nite Small Signal Current Gain 100 | 500 lo= 1.0 mA, Voce =5.0 V, f = 1.0 kHz hie Input Resistance 2.5 17 kX | Ile =1.0 MA, Vee = 5.0 V, f = 1.0 kHz hoe Output Conductance 5.0 40 pumhos ! Ic = 1.0mA, Vee =5.0 V, f = 1.0 KHz Ne Voltage Feedback Ratio 10 x10-4 | Io = 1.0 mA, Voce =5.0 V, f = 1.0 KHz NF Wide Band Noise Figure 3.0 dB Ic = 20 pA, Vee =5.0 V, Rs =10k0, BW = 15.7 Hz, f = 10 Hz to 10 kHz 3-285 myFAIRCHILD SEMICONDUCTOR ay pe ff syequ74 coazsen 5 ff 3469674 FAIRCHILD SEMICONDUCTOR 84D 27566 D NRCHILD 2N4030/2N4031 7-2 7-/7 | ie 2N4032/2N4033 A Schlumberger Company ; PNP Small Signal General Purpose Amplifiers Vceo ... 60 V (Min) (2N4030/2), 80 V (Min) 2N4031/3) PACKAGES here ... 100-300 @ 10 mA (2N4032/3), 40 (Min) 2N4032), 2N4030 TO-39 25 (Min) (2N4033) @ 1.0 A 2N4031 TO-39 e Complements ... 2N3107, 2N3108, 2N3109, 2N3020 - 2N4032 TO-39 | 2N4033 TO-39 \ ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 C to 200 C Operating Junction Temperature 200 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 0.8 W 25C Case Temperature 4.0W Voltages & Currents 4030/2 4031/3 Vceo Collector to Emitter Voltage 60 V -80V (Note 4) Veao Collector to Base Voltage -60 V -80V Veso Emitter to Base Voltage -5.0V 5.0V lc Collector Current 1.0A 10A ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) ' 4030 4031 SYMBOL } CHARACTERISTIC MIN MAX| MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Base Breakdown| -60 80 Vv lo = 10 pA, le =O Voltage BVeeo Emitter to Base Breakdown -5.0 6.0 Vv le = 10 pA, le =O : Voitage t lego Emitter Cutoff Current 10 10 pA | Ves =5.0V, le =0 Ico Collector Cutoff Current 50 nA | Vca =50V, le = 0 50 nA Ves = -60 Vv, le = 0 50 nA | Vea = 50 V, le = 0, Ta = 150C 50 pA Ves = -60 Vv, le = 0, Ta = 150C Nre DC Current Gain 30 30 Ie = 100 pA, Vee = 5.0 V NOTES: 14, These ratings are timiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 C and junction-to-case thermal resistance of 43,7 CW (derating factor of 22.8 mW/ C); junction-to-ambient thermal resistance of 219 C/W (derating factor of 4.56 mW/C). 4, Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: fength = 300 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set 7224. saree venient 3-286i Bearers FAIRCHILD SEMICONDUCTOR 84 De Bsye9e74 onazse? 2 3469674 FAIRCHILD SEMICONDUCTOR 2N4030/2N4031 2N4032/2N4033 84D 27567 pb Th 294-17 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 4030 4031 SYMBOL | CHARACTERISTIC MIN MAX} MIN MAX} UNITS TEST CONDITIONS hee DC Pulse Current Gain (Note 5); 40 | 120 | 40 120 lc = 100 mA, Vce = 5.0 V 25 25 Ic = 500 mA, Veg = -5.0 V 15 10 Ic = 1.0 A, Vee = -5.0 V 15 15 Io = 100 mA, Voce = 5.0 V, Ta = 55C VcEo Collector to Emitter Sustaining | 60 ~-80 Vv Ic = 10 mA (pulsed), Ip = 0 Voltage (Note 5) Vceisat! Collector to Emitter Saturation 0.15 0.15 Vv lc = 150 mA, Ip = 15 mA Voltage (Note 5) 0.5 -0.5 Vv lc = 500 mA, Is = 50 mA |1.0 Vv lc = 1.0 A, ls = 100 MA Veeion: Base to Emitter On Voltage 11 1 Vv Ic = 500 MA, Vee = 0.5 V (Note 5) -1.2 Vv lo = 1.0 A, Vee = -1.0V Veetean Base to Emitter Saturation -0.9 0.9 v lc = 150 mA, ls = 15 mA Voltage (Note 5) Con Collector to Base Capacitance 20 20 pF Vee = -10V, le =0, f= 1.0 MHz Civ Input Capacitance 110 410 pF Vee = 0.5 V, lo =0, =1.0 MHz | Htel Magnitude of Common Emitter! 1.0 | 40 | 1.0] 4.0 lc = 50 MA, Vce = -10 V, Smail Signal Current Gain = 100 MHz ts Storage Time 350 350 ns Ic = 500 MA, lai ~ls2 50MA (test circuit no. 341) tt Fall Time (test circuit no. 341) 50 50 ns Ic +500 mA, Ini ~la2*50MA ton Turn On Time 100 100 ns Io = 500 mA, Iai = 50 MA (test circuit no. 341) 4032 4033 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX! UNITS TEST CONDITIONS BVceo Collector to Base Breakdown | ~60 -80 v le = 10 pA, le =0 Voltage BVeso Emitter to Base Breakdown -5.0 5.0 Vv le = 10 pA, Ic = 0 Voltage leso Emitter Cutoff Current 10 10 pA Ves = ~-5.0V, lo =0 Iceo Collector Cutoff Current 50 nA | Vee = 50 V, le = 0 50 nA Ves = -60 v, le =0 50 pA Vos =-50V, le=0, Ta=150C 50 pA | Von =6OV, le =0, Ta=150 C re DC Current Gain 75 75 lc = 100 vA, Vee = -5.0 V hre DC Pulse Current Gain (Note 5); 100 | 300 | 100] 300 Ic = 100 MA, Vce = 5.0 V 70 70 le = 500 mA, Voce = 5.0 V 40 25 Io = 1.0 A, Vee = 5.0 V 40 40 le = 100 mA, Vee = -5.0 V, Ta = 68C Vceo Collector to Emitter Sustaining | 60 80 Vv le = 10 mA (pulsed), is = 0 Voltage (Note 5)MN FAT RCHILD SEMICONDUCTOR S4 DE MP 3469674 o0275ba 4 i 2469674 FAIRCHILD SEMICONDUCTOR 84D 27566 Tr 2N4030/2N4031 2N4032/2N4033.T_ A A7 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 4032 4033 SYMBOL| CHARACTERISTIC MIN MAX} MIN MAX | UNITS TEST CONDITIONS \ Vcetsan Collector to Emitter Saturation 0.15 0.15 Vv Ic = 150 mA, la = 15 MA Voltage (Note 5) 0.5 -0.5 Vv Ic = 500 mA, Is = 50 mA 1.0 Vv Io = 1.0A, ls = 100 mA \ Vegiont Base to Emitter On 11 -1.1 Vv Ic = 500 MA, Vce = 0.5 V Voltage (Note 5) \1.2 Vv lo = 1.0 A, Vee =-1.0V Veeisat) Base to Emitter Saturation -0.9 -0.9 Vv Ic = 150 mA, Ip = 15 MA Voltage (Note 5) Cob Collector to Base Capacitance 20 20 pF Vee = 10V, le =0, f=1.0MHz Ch Input Capacitance 110 410 pF | Vse=0.5 V, Ile =0, f =1.0 MHz | hral Magnitude of Common Emitter] 1.5 | 5.0 | 1.5 | 5.0 lc = 50 MA, Vce = 10 V, Smail Signal Current Gain = 100 MHz ts Storage Time 350 350 ns Ig =~ 500 mA, lai = Ip2 = 50MA (test circuit no. 341) tt Fall Time (test circuit no. 341) 50 50 ns lo = 500 MA, Iai ~ Ip2 =~ 50MA ton Turn On Time 100 100 ns lo 500 mA, Iai ~ 50 MA (see test circuit no. 341) a a oe 3-288FAIRCHILD SEMICONDUCTOR 1 i eee &4 3469674 FAIRCHILD SEMICONDUCTOR 2N4036/2N4037 7-27-23 PNP General Purpose Transistor -- FAIRCHILD A Schlumberger Company DE 3464674 OO27564 84D 27569 Dp - ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature ~65C to 200C Operating Junction Temperature -65C to 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 4036 25C Ambient Temperature 5.0 W Voltages & Currents (Note 4) 4036 Vceo Collector to Emitter Voltage ~65 V Vcso Collector to Base Voltage 90 V Veso Emitter to Base Voltage -7.0V le Collector Current (Continuous) 1.0A le Base Current (Continuous) 05A 4037 1.0 W 4037 40 V ~60 V -7.0V 1.0A 0.5A PACKAGE 2N4036 TO-39 2N4037 TO-39 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 2N4036 2N4037 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Sustaining | 65 40 Vv Ic = 100 mA, ls =0 Voltage BVcso Collector to Base Breakdown -60 Vv lc =0.1 mA Voltage lego Emitter Cutoff Current 10 BA | Ves =-7.0 V 1.0 pA Ves = -5.0 V Ico Collector Cutoff Current 100 pA | Ves = -90 V, le =0 0.25 BA Vos =~-60 V, le =0 Icex Collector Cutoff Current 100 mA | Vce = 85 V, Vez = -1.5 V 0.1 pA Vce = 30 V, Ver =-1.5V Te = 150C re DC Current Gain (Note 5) 20 200 lo = 150 MA, Vee = 2.0 V 20 lo = 100 pA, Vee = 10 V 15 Ico = 1.0 MA, Vce = 10 V 40 | 140 50 | 250 Io = 160 mA, Vee = 10 V 20 Ic = 500 mA, Voce = 10 V Veetean Collector to Emitter Saturation 0.65 -1.4 Vv lc = 150 mA, Ip = 15 MA Voltage Vectcat Base to Emitter Saturation -1.4 V Ic = 150 mA, la = 15 MA Voltage (Note 5) . Veeiow Base to Emitter On Voltage 1.4 Vv lo = 150 mA, Vce = 10 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 C and (2N4036) junction-to-case thermal resistance of 35G/W (derating factor of 28.6 mW/ G); (2N4037) junction-to-case thermal resistance of 175 C/W (derating factor of 5.71 mW/ C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys, duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T224. eee reer eee ee ce cece cece eee eeecee eee ence ne enen a eee eee a 3-289 antFAIRCHILD SEMICONDUCTOR a meer Une ay DE fp 3465b74 ooe7570 7 3469674 FAIRCHILD SEMICONDUCTOR 2N4036/2N4037 84D 27570 D? Ty aa, 23 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 2N4036 2N4037 SYMBOL] CHARACTERISTIC MIN MAX| MIN MAX} UNITS TEST CONDITIONS [hid High Frequency Current Gain | 3.0 Ic = 50 mA, Vce = 10 V, 3.0 10 f = 20 MHz Cob Collector to Base Capacitance 30 pF Ves = 10 V, f = 1.0 MHz t Rise Time 70 ns Ic = 150 mA, la: = 15 MA ts Storage Time 600 ns Ic = 150 mA, !31 =Ip2=15MA tr Fall Time 100 ns | lo= 150 mA, les =is2= 15 MA ton Turn On Time 110 ns lc = 150 mA, lar = 15 MA tort Turn Off Time 700 ns Ic = 150 mA, Ia: =!52= 15 MA 3-290