Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR 2N4923
TO-126
General Purpose Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION VALUE UNIT
Collector -Base Voltage VCBO 80 V
Collector -Emitter Voltage VCEO 80 V
Emitter Base Voltage VEBO 5.0 V
Collector Current Continuous IC 3.0 A
Base Current IB 1.0 A
Power Dissipation @ Tc=25 deg C PD 30 W
Derate Above 25 deg C 0.24 W/deg C
Operating And Storage Junction Tj, Tstg -65 to +150 deg C
Temperature Range
Lead Temperature for Soldering 1/16" TL 260 deg C
from Body for 10 Seconds.
Thermal Resistance
Junction to Case Rth (j-c) 4.16 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Sustaining Voltage VCEO(sus) IC=100mA, IB=0 80 - - V
Collector Cut off Current ICEO VCE=40V, IB=0 - - 0.5 mA
ICBO VCB=80V, IE=0 - - 0.1 mA
ICEX VCB=80V,VEB(0ff)=1.5V - - 0.1 mA
Tc=125 deg C
VCB=80V,VEB(0ff)=1.5V - - 0.5 mA
Emitter Cut off Current IEBO VEB=5V, IC=0 - - 1.0 mA
DC Current Gain hFE * IC=50mA,VCE=1V 40 - - -
IC=500mA,VCE=1V 30 150
IC=1A,VCE=1V 10 - -
Collector Emitter Saturation Voltage VCE(sat)* IC=1A, IB=0.1A - 0.6 V
Base Emitter Saturation Voltage VBE(sat)* IC=1A, IB=0.1A - 1.3 V
Base Emitter on Voltage VBE(on) * IC=1A,VCE=1V - 1.3 V
DYNAMIC CHARACTERISTICS
Transistors frequency ft IC=250mA,VCE=10V,f=1MHz 3.0 - - MHz
Output Capacitance Cob VCB=10V, IE=0, f=100kHz - - 100 pF
Small Signal Current Gain hfe IC=250mA,VCE=10V,f=1kHz 25 - -
*Pulse Test PW=300us, Duty Cycle=2%
IS / IEC QC 700000
IS / IEC QC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 2