FACON 4SE D MM 3456203 0000006 9 MBFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T- 23 -O { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophass mouls 0,8 Amp a 1,5 Amp VRRM VRMS Ig Max Fwd ldsm/ IR per diode recom- on re- Voitage lktsm @VR mended sistive {a) Ta = 25C Types max load Case sur charge Ve lo 25 C | 125 C rsistive (Vv) (V) (A) (Vv) (A) (A) (uA) | (mA) FB SERIE 0,8 AMP FBD 08 400 150 08 10 08 26 10 1 FBH 08 800 380 0.8 10 08 25 10 1 CB-198 R FB SERIE 1 AMP FBD 10 400 150 1 10 10 45 10 1 FBH 10 800 380 1 10 10 45 10 1 CB-198 R FB SERIE 1,5 AMP FBD 15 400 150 1.5 10 15 50 10 1 FBH 15 800 380 15 10 15 50 10 1 CB-198 R Oo = 0.8 4 C) YA es) 5,08 5,1) 13 | +$__+____ (+ 716) All dimensions in millimeters Toutes dimensions en millimtresFACON 4SE D MM 3456203 0000007 O MBFCN 7-23-01 FACON SEMICONDUCTEURS/SEMICONDUCTORS single phase moulded bridges 3 to 6 Amp ponts monophass mouls 3 a 6 Amp VrRam | VRMS \g la Max Fwd_|ldsm/| !R per diode R c recom- on re- on ca- Voltage sm @ VR min. | max. mended | sistive pacitive j|(a) Ta = 25C Types max load load Case sur charge| sur charge | VE lo 25 C (125C rsistive | capacitive (Vv) (Vv) (A) (A) (Vv) (A) | (A) | A) | (mA) |) 0) (uF) 3A/T = 70C Tamb * Tamb * / Tamb a5 BC BY 204 115 / B 20C 3 200/2 200 50 25 4 33 12 20 150 10 1 0.25 20000 BA 204 115 / B 40C 3200/2 200 100 50 4 33 12 20 150 10 i 0.6 40000 BB 204 115 / B 80C 3200/2 200 200 80 4 33 12 20 150 10 1 08 7000 BD 204 115 / B 125 C 3200/2 200 400 150 4 33 12 20 150 10 1 15 5000 BF 204 115 / B 250 C 3 200/2 200 600 250 4 33 12 20 150 10 1 2.5 2000 BH 204 115 / 800 CB-199 B 380 C 3 200/2 200 900 380 4 33 12 20 150 10 1 35 1000 6A/T = 25C Tamb* Tamb = / Tamb 25/85 C 2/45 C BY 38115 / 20000 B 20C 5000/3 300 50 26 6s 5/4 11 3 250 10 1 0.25 | 20000 BA 38 115 / B 405000/3 300; 100 50 6/5 5/4 V1 3 250 10 1 0.5 10000 BB 38 115 / B 80C 5000/3 300; 200 80 6/5 5/4 14 3 250 10 1 0.8 7000 BD 38 115 / B 125C 5000/3 300} 400 150 6/5 5/4 11 3 250 10 1 15 5000 BF 38115 / B 250 C 5000/3 300 | 600 250 6/5 5/4 11 3 250 10 1 2.5 2000 BH 38 115 / 800 B 380 C5. 000/3300| 900 380 6/5 5/4 11 3 250 10 1 3.5 1000 CB-199 CB-199 + Bride de fixation sur chassis rf 12367 | ++ | chelle 1 cotes en mm ! r: 0,5 maxi | { ry 24 mox 22 | o 36 i | | | be 48 J a 45 is / 42 ~ r:30 | 20 Pea ere aaneeensentn Dimensions in millimetersFACON 45E D MM 3456203 0000008 2 mmFCN T=23-0, FACON SEMICONDUCTEURS/SEMICONDUCTORS moulded single phase bridges 10 A to 35 A ponts monophass mouls 10 A a35A Vrarm | YRus Ig Max Fwd lasm/ | |R per diode recom- on re- Voltage lism @Vr mended sistive (a) Ta = 25C Use Types max load o Case sur charge VE lo 25 C | 125 C Fonction rsistive {v) (Vv) (A) (Vv) (A) (A) (uA) | (mA) 10 A Tcase = 80C BY 36933 50 25 10 12 5 200 100 1 BA 36933 100 50 10 12 5 200 100 1 fu BB 36933 200 80 10 12 5 200 100 1 BD 36933 400 150 10 12 5 200 | 100 1 wk BL BF 36933 600 250 10 12 5 200 | 100 1 * BH 36933 800 380 10 12 5 200 100 1 BJ 36933 1000 410 10 12 5 200 100 1 '~ BL 36933 1200 440 10 12 5 200 100 1 1I5A Tease = 75C BY 38933 50 25 15 11 75 240 100 1 BA 38933 100 50 15 11 75 240 100 1 o BB 38933 200 80 15 11 75 240 100 1 BD 38933 400 150 15 14 75 240 100 1 wt BL BF 38933 600 250 15 11 75 240 100 1 7 ; BH 38933 800 380 15 11 75 240 100 j BJ 38933 1000 410 15 11 75 240 100 1 1 BL 38933 1200 440 15 11 75 240 100 1 25 A Tcase = 60C BY 37933 50 25 25 105 125 300 100 1 BA 37933 100 50 25 105 125 300 100 1 if BB 37933 200 80 25 105 12.5 300 100 1 BD 37933 400 150 25 105 | 125 | 300 | 100 1 wt BL BF 37933 600 250 25 105 125 300 100 1 7 x BH 37933 800 380 25 105 125 300 100 1 T BJ 37933 1000 410 2 1.05 125 300 100 1 ~ BL 37933 4200 440 25 105 125 300 100 1 35 A Tcase = 55C BY 39933 50 25 35 1.05 175 400 100 1 BA 39933 100 50 35 105 175 400 100 1 it BB 39933 200 80 35 1.05 175 400 100 1 BD 39933 400 150 35 105 175 400 100 1 ve BL BF 39933 600 250 35 1.05 75 400 100 1 * x BH 39933 800 380 35 105 175 400 100 1 t BJ 39933 1000 410 35 105 17.5 400 100 1 ~ BL 39933 1200 440 35 105 175 400 100 1 22 14 FASTON 7 | | { { ~ on @ 5.1 max. TT : Recommended stud torque -4mN _ 2 | L t _ Couple de serrage recommand I " _ L 3! . | = Marking _ type number 1q o! \ \ Marquage n du type al ", a to Weight, | a | Masse 209 \ ; : \ aR tonneFACON H5E D FACON SEMICONDUCTEURS/SEMICONDUCTORS single phase moulded bridges 10 A to 50 Amp ponts monophass mouls 10 A a 50 Amp MB 3456203 0000009 4 mFCN T-23-01/ Vrarm | VRMS lg Max Fwd ldsm/ | 'R per diode recom- on re- Voltage ltsm @ VR mended sistive (a) Ta = 25C Use Types max load Case vp sur charge VF lo 25 C | 125 C Fonction rsistive (Vv) (v) (A) (Vv) {A) (A) (nA) | (mA) 10A Tease = 80C BY 36931 50 25 10 12 6 200 100 1 BA 36931 100 50 10 12 5 200 100 1 i BB 36931 200 80 10 12 5 200 100 1 BD 36931 400 150 10 12 5 200 100 1 i a, a BF 36931 600 250 10 12 5 200 100 1 k BH 36931 B00 380 10 12 5 200 100 1 BJ 36931 1000 410 10 12 5 200 100 1 I BL 36931 1200 440 10 12 5 200 100 1 B-200 15 A Tease = 80 C BY 38931 50 25 15 75 240 100 1 BA 38931 100 50 15 75 240 100 1 BB 38931 200 80 15 75 240 100 1 BD 38931 400 150 15 75 240 100 1 vk BL BF 38931 600 250 15 75 240 100 1 ; 4 BH 38931 800 380 15 75 240 100 1 BJ 38931 1000 410 15 75 240 100 1 - BL 38931 1200 440 15 75 240 100 1 CB-200 25 A Tease = 60C BY 37931E 50 25 5 105 | 125 300 100 1 BA 37 931 100 50 25 105 | 125 300 100 1 + BB 37931E 200 80 5 105 | 125 300 100 1 8D 37 931E 400 150 25 108 | 125 300 100 1 ~e BL BF 37931 600 250 25 105 | 125 300 100 1 x BH 37931E 800 380 25 105 | 125 300 100 1 BJ 37931E 1000 410 5 105 | 125 | 300 100 1 tr BL 37931 1200 440 vis 105 | 125 300 100 1 cB-200 35 A Tcase = 55C BY 39931 50 5 36 1 175 400 100 1 BA 39931 100 50 35 1 175 400 100 1 + BB 39931 200 80 35 1 175 400 100 1 BD 39931 400 150 36 1 175 400 100 1 wt x BF 39931 600 250 36 1 175 400 100 1 x BH 39931 800 380 35 1 17.5 400 100 1 BJ 39931 1000 410 36 1 175 400 100 1 1 BL 39931 1200 440 36 1 175 400 100 1 CB-200 40 A Tease = 60C BY 41931 50 5 40 1 20 400 100 1 BA 41931 100 50 40 1 20 400 100 1 + BB 41931 200 80 40 1 20 400 100 1 BD 41931 400 150 40 1 20 400 100 1 wet BF. BF 41931 600 250 40 1 20 400 100 1 x BH 41934 800 380 40 1 20 400 100 1 BJ 41931 1000 410 40 1 20 400 400 1 I BL 41931 1200 440 40 1 20 400 100 1 CB-200 50A Tease = 60C BY 40931 50 25 50 11 25 500 100 1 BA 40931 100 50 50 11 25 500 100 1 + BB 40931 200 80 50 11 25 500 100 1 BD 40931 400 150 50 1 5 500 100 1 ak BL BF 40931 600 250 50 11 25 500 100 1 7 j BH 40931 800 380 50 11 25 500 100 1 BJ 40931 1000 410 50 11 25 500 400 1 T- BL 40931 1200 440 50 11 25 500 100 1FACON USE D MM 3456203 OO00010 0 MEFCN T-235-o1 FACON SEMICONDUCTEURS/ SEMICONDUCTORS moulded three phase bridges 25 A to 50 A ponts triphass mouls 25 A a50A Verm | VRus ld Max Fwd ldsm/ | IR per diode recom- on re- Voltage ism @ VR mended sistive (a) Ta = 25C Use Types max load Case sur charge Ve lo 25 C | 125 C Fonction rsistive (Vv) (Vv) (A) (Vv) (A) (A) (uA) | (mA) 25 A Tcase = 60C GY 37931 50 25 25 1 8 400 100 1 GA 37931 100 50 25 1 8 400 100 1 + GB 37931 200 80 25 1 8 400 100 1 4s k & GD 37931 400 150 25 1 8 400 100 1 L~ fr -~ GF 37931 600 250 25 1 8 400 100 1 i k ] GH 37931 800 380 25 1 8 400 100 1 _ GJ 37931 1000 410 25 1 8 400 100 1 GL 37931 1200 440 26 1 8 400 100 1 35 A Tease = 55C GY 39931 50 25 35 1 12 400 100 1 GA 39931 100 50 35 1 12 400 100 1 + GB 39931 200 80 35 1 12 400 100 1 i t & GD 39931 400 150 35 1 12 400 100 1 Pw fw bow GF 39931 600 250 35 1 12 400 100 1 6k i GH 39831 800 380 35 1 12 400 100 1 _ GJ 39931 1000 410 35 1 12 400 100 1 GL 39931 1200 440 35 1 12 400 100 1 50A Tease = 60C GY 40931 50 25 50 1 7 400 100 1 GA 40931 100 50 50 1 7 400 100 1 + GB 40931 200 80 50 1 7 400 100 1 k & & GD 40931 400 150 50 1 7 400 100 1 Pw b~ b~ GF 40931 600 250 50 1 7 400 100 1 z x 7 GH 40931 800 380 50 i i 400 100 1 _ GJ 40931 1000 410 50 1 7 400 100 1 GL 40931 1200 440 50 1 7 400 | 100 1 6-237 CB-200 645 CB-237 t ' ! 8 36931 B 38991 oo rata C B 37931 B 39931 | a G 37931 D 74193) us D 7413793) Dimensions in millimeters