DHG 10 C 600PB advanced V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 1 Part number 2 600 V 5A 35 ns 3 DHG 10 C 600PB Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) TO-220AB Industry standard outline Epoxy meets UL 94V-0 RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. max. Unit TVJ = 25 C 600 V VR = 600 V TVJ = 25 C 10 A VR = 600 V TVJ = 125 C 1 mA 5A IF = I F = 10 A TVJ = 25 C 2.20 V 2.98 V IF = 5A I F = 10 A TVJ = 125 C 2.02 2.85 V V rectangular, d = 0.5 T C = 110 C 5 A T VJ = 150 C 1.31 133 V m 3.15 K/W for power loss calculation only R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr reverse recovery time CJ junction capacitance EAS non-repetitive avalanche energy I AR repetitive avalanche current VA = 1.5*VR typ.; f = 10 kHz (c) 2006 IXYS all rights reserved 150 C = 25 C -55 40 W t p = 10 ms (50 Hz), sine TVJ = 45 C 40 A IF = TVJ = 25 C TVJ = 125 C 2 A A VR = 400 V TVJ = 25 C TVJ = 125 C 35 ns ns VR = 300 V; f = 1 MHz TVJ = 25 C tbd pF I AS = tbd A; L = 100 H TVJ = 25 C TC 5 A; -diF /dt = 100 A/s * Data according to IEC 60747and per diode unless otherwise specified tbd mJ tbd A 0629 IXYS reserves the right to change limits, conditions and dimensions. typ. DHG 10 C 600PB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 35 A 0.50 K/W 0.4 0.6 Nm 20 60 N -55 150 C Weight 2 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB M C D B E F N A H G J K L (c) 2006 IXYS all rights reserved R Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 * Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensions. Q Dim.