DHG 10 C 600PB
advanced
Sonic-FRD
Symbol Definition R a t i n g s
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
µA
V
40
I
FAV
A
V
F
2.20
R
thJC
3.15 K/W
V
R
=
123
min.
5
ms (50 Hz), sine
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
V
RRM
V600
10
T
VJ
V°C=
T
VJ
°C=mA
1
Package:
Part number
V
R
=
T
VJ
=°CI
F
=A
V
T
C
= 110 °C
P
tot
40 W
T
C
°C=
A
I
RM
2
/dt
I
F
=A;
V
R
=V
A
t
rr
E
A
S
tbd mJ
T
VJ
°C
=
I
A
S
=A;L = µH
I
A
R
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
150 °C
-55
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
V
I
t
RRM
FAV
rr
=
=
=
600
5
35
5
T
VJ
=45°C
5
-di
F
=100 A/µs
400
tbd 100
DHG 10 C 600PB
V
A
ns
600
V
600
25
25
25
t
p
=10
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
non-repetitive aval anc he energy
repetitive avalanche current
reverse recovery time
Conditions Unit
2.98
T
VJ
°C
=25
C
J
tbd pF
j
unction capacitance V
R
=V;
300 T
VJ
125
V
F0
V
1.31
T
VJ
= 150 °C
r
F
133 Ω
f = 1 MHz =°C
25
m
TO-220AB
V2.02T
VJ
=°CI
F
=A
V
5 125
2.85
I
F
=A10
I
F
=A10
ns35
ns
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
T
VJ
°C=25
T
VJ
°C= 125
T
VJ
°C=25
T
VJ
°C= 125
rectangular, d = 0.5
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0629
* Data according to IEC 60747and per diode unless otherwise specified
DHG 10 C 600PB
advanced
I
RMS
A
per pin* 35
R
thCH
K/W
0.50
M
D
Nm
0.6
mounting torque 0.4
T
st
°C
150
storage temperature -55
Weight g
2
C
B
F
A
H
G
L
K
J
D
N
M
E
R
Q
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance case to heatsink
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220AB
F
C
N
60
mounting force with clip 20
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0629
* Data according to IEC 60747and per diode unless otherwise specified