tm
©2009 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
April 2009
Absolute Maximum Ratings
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC120 A
Collector Current @ TC = 100oC60 A
ICM (1) Pulsed Collector Current @ TC = 25oC 180 A
PDMaximum Power Dissipation @ TC = 25oC378 W
Maximum Power Dissipation @ TC = 100oC151 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.33 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 1.1 oC/W
RθJA Thermal Resistance, Junction to Ambient - 40 oC/W
G
E
C
ECG
COLLECTOR
(FLANGE)
FGH60N60SFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
2www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Packaging
Type Qty per Tube
Max Qty
per Box
FGH60N60SFD FGH60N60SFDTU TO-247 Tube 30ea -
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250µA-0.4-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60A, VGE = 15V -2.32.9V
IC = 60A, VGE = 15V,
TC = 125oC-2.5- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
- 2820 - pF
Coes Output Capacitance - 350 - pF
Cres Reverse Transfer Capacitance - 140 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 60A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25oC
-22-ns
trRise Time - 42 - ns
td(off) Turn-Off Delay Time - 134 - ns
tfFall Time - 31 62 ns
Eon Turn-On Switching Loss - 1.79 - mJ
Eoff Turn-Off Switching Loss - 0.67 - mJ
Ets Total Switching Loss - 2.46 - mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 60A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125oC
-22-ns
trRise Time - 44 - ns
td(off) Turn-Off Delay Time - 144 - ns
tfFall Time - 43 - ns
Eon Turn-On Switching Loss - 1.88 - mJ
Eoff Turn-Off Switching Loss - 1.0 - mJ
Ets Total Switching Loss - 2.88 - mJ
QgTotal Gate Charge VCE = 400V, IC = 60A,
VGE = 15V
- 198 - nC
Qge Gate to Emitter Charge - 22 - nC
Qgc Gate to Collector Charge - 106 - nC
3www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 30A TC = 25oC- 2.0 2.6V
TC = 125oC- 1.8 -
trr Diode Reverse Recovery Time
IES = 30A, dIES/dt = 200A/µs
TC = 25oC- 47 - ns
TC = 125oC - 179 -
Qrr Diode Reverse Recovery Charge TC = 25oC- 83 - nC
TC = 125oC - 567 -
4www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
02468
0
30
60
90
120
150
180
20V
TC = 25oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 02468
0
30
60
90
120
150
180
20V
TC = 125oC
15V
12V 10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
150
180
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 012345
0
30
60
90
120
150
180 Common Em itter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
120A
60A
IC = 30A
Comm on E m itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-EmitterCase Temp erature, TC [oC] 0 4 8 121620
0
4
8
12
16
20
IC = 30A
60A
120A
Common Em itter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter Vo ltag e , VGE [V]
5www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics
0 4 8 121620
0
4
8
12
16
20
IC = 30A
60A
120A
Common Em itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter Vo ltag e , VGE [V] 0 4 8 121620
0
4
8
12
16
20
120A
IC = 30A
60A
Comm on E m itter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
110
1000
2000
3000
4000
5000
6000 Comm on E mitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacit anc e [ pF]
Collector-Emitter Voltage, VCE [V] 30 0 50 100 150 200
0
3
6
9
12
15 Comm on Emitter
TC = 25oC
300V
200V
VCC = 100V
Gate-Emitter Voltage, VGE [V]
Ga te Charg e , Qg [nC]
1 10 100 1000
1
10
100
300
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Cu rrent, IC [A]
Collector-Emitter Voltage, VCE [V]
1 10 100 1000
0.01
0.1
1
10
100
500
Single Nonre pe titive
Pulse TC = 25oC
Curves must be derated
linearly with incre as e
in temperature
1ms
10 ms
DC
10µs
100µs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
6www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 17. Switchin g Lo ss vs Gate Res ista nce Figur e 1 8. Swit ching Los s vs Colle ctor Cur rent
0 1020304050
10
100
300
Common Emitter
VCC = 40 0V , V GE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
0 1020304050
10
100
1000
Common Emitter
VCC = 4 00V , VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
6000
0 20406080100120
10
100
500 Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC tr
td(on)
Switching Time [ns]
Collector Current, IC [A] 0 20406080100120
10
100
1000 Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Co llec t or C urrent, IC [A]
0 1020304050
1
20
0.5
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
10
0 20406080100120
0.1
1
10
30 Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
7www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23. Transient Thermal Impedance of IGBT
01234
1
10
100
TJ = 75oC
TJ = 25oC
200
TC = 25oC
TC = 125oC
TJ = 125oC
Forward Voltage, VF [V ]
Forward Current, IF [A]
0 200 400 600
0.01
0.1
1
10
100
500
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Current , IR [µA]
Reverse Voltage, VR [V]
5204060
30
40
50
60
200A/µs
di/dt = 100A/µs
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
5204060
40
60
80
100
200A/µs
di/dt = 100A/µs
Stored Recovery Charge, Qrr [nC]
Forward Current, IF [A]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
0.2
0.5
0.1
0.05
0.01
0.02
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
t1
PDM
t2
8www.fairchildsemi.com
FGH60N60SFD Rev. A1
FGH60N60SFD 600V, 60A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSW ITCH™*
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionM ax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™ ®*
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHI LD SEM ICONDUCTOR RESERVES THE RIG HT TO MAKE CHANGES WITHOUT F URTHER NOTICE TO ANY PRODUCTS HEREI N TO IMPRO VE
RELIABI LITY , FUNCTION, O R DESIGN. FAI RCHILD DOES NOT ASSUME ANY L IABIL ITY ARI SING OUT OF THE APPL ICATION O R USE OF ANY PRODUCT OR
CIRCUI T DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LI CENSE UNDER ITS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE
SPECIFI CATIONS DO NO T EXPAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CO NDITIONS, SPECIFI CALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHI LD’S PRODUCTS ARE NOT AUTHORIZED F OR USE AS CRITI CAL COM PONENTS IN LI FE SUPPORT DEVICES OR SY STEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAI RCHI LD SEM ICONDUCTOR CORPORATIO N.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical im plant i nto the body or (b) support or sustai n life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www .fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all w arranties and will appropriately address any warranty issues th at may arise. Fair child will n ot provide
any w arranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buy ing direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only. Rev. I40
