BYS12–90
Vishay Telefunken
www.vishay.de FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98 1 (4)
Document Number 86015
Schottky Barrier Rectifier
Features
D
High efficiency
D
Low power losses
D
Very low switching losses
D
Low reverse current
D
High surge capability
Applications
Polarity protection
Low voltage, high frequency rectifiers
15 811
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Reverse voltage
=Repetitive peak reverse voltage VR
=VRRM 90 V
Peak forward surge current tp=10ms, half sinewave IFSM 30 A
Average forward current IFAV 1.5 A
Junction and storage temperature range Tj=Tstg –55...+150
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction lead TL=constant RthJL 25 K/W
Junction ambient mounted on epoxy–glass hard tissue RthJA 150 K/W
mounted on epoxy–glass hard tissue, 50mm2 35
m
m Cu RthJA 125 K/W
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35
m
m Cu RthJA 100 K/W
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A VF900 mV
g
IF=15mA VF360 mV
Reverse current VR=VRRM IR200
m
A
VR=VRRM, Tj=100
°
C IR2 mA
BYS12–90
Vishay Telefunken
www.vishay.de FaxBack +1-408-970-5600 Rev. 2, 24-Jun-98
2 (4) Document Number 86015
Characteristics (Tj = 25
_
C unless otherwise specified)
0 40 80 120 160
0
1
2
3
4
7
200
95 9720
P – Maximum Reverse Power Dissipation ( W )
R
Tj – Junction Temperature ( °C )
5
6
RthJA=25K/W
RthJA=100K/W
VR=VRRM
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0 40 80 120 160
0.1
1
10
100
1000
200
95 9721
I – Reverse Current ( mA )
R
Tj – Junction Temperature ( °C )
VR=VRRM
Figure 2. Max. Reverse Current vs.
Junction Temperature
0
0
0.4
0.8
1.2
1.6
2.0
I – Average Forward Current ( A )
FAV
Tamb – Ambient Temperature ( °C )95 9722
40 80 120 160 200
VR=VRRM, Half Sinewave, RthJA=25K/W
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
0
0
0.4
0.8
1.2
1.6
2.0
I – Average Forward Current ( A )
FAV
Tamb – Ambient Temperature ( °C )95 9723
40 80 120 160 200
VR=0V, Half Sinewave
100K/W
125K/W
150K/W
RthJA=25K/W
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
0 0.6 1.2 1.8 2.4
0.01
0.1
1
10
100
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
3.0
95 9724
Tj=25°C
Tj=150°C
Figure 5. Max. Forward Current vs. Forward Voltage
BYS12–90
Vishay Telefunken
www.vishay.de FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98 3 (4)
Document Number 86015
Dimensions in mm
14275
BYS12–90
Vishay Telefunken
www.vishay.de FaxBack +1-408-970-5600 Rev. 2, 24-Jun-98
4 (4) Document Number 86015
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423