CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Fast switching for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 200 300 400 600 800 1000 V
V
RMS
35 70 140 210 280 420 560 700 V
V
DC
50 100 200 300 400 600 800 1000 V
I
F(AV)
A
Trr ns
Cj pF
R
θJA O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1405050 Version: I14
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
HS
1K
1.0 1.3 1.7
50
50
20 15
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Maximum reverse recovery time (Note 2) 75
Typical junction capacitance (Note 3)
Typical thermal resistance 70
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A V
F
V
Maximum reverse current @ rated VR T
J
=25
T
J
=100
T
J
=125
I
R
5
μA
150
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
30
HS
1M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
PARAMETER SYMBOL HS
1A
HS
1B
HS
1D
HS
1F
MECHANICAL DATA
Case: DO-214AC (SMA)
DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
HS
1G
HS
1J
HS1A thru HS1M
Taiwan Semiconductor
Hi
g
h Efficient Surface Mount Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
PART NO.
PART NO.
HS1M
HS1M
HS1M
(TA=25 unless otherwise noted)
Document Number: DS_D1405050 Version: I14
HS1MHR3 H R3 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
HS1M R3 R3
HS1M R3G R3 G Green compound
Note 1: "x" defines voltage from 50V (HS1A) to 1000V (HS1M)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
F4 Folded SMA 7,500 / 13" Plastic reel
N/A E3 Clip SMA 1,800 / 7" Plastic reel
E2 Clip SMA 7,500 / 13" Plastic reel
SMA 7,500 / 13" Plastic reel
F3 Folded SMA 1,800 / 7" Plastic reel
F2 Folded SMA 7,500 / 13" Paper reel
HS1x
(Note 1)
Prefix "H"
R3
Suffix "G"
SMA 1,800 / 7" Plastic reel
R2 SMA 7,500 / 13" Paper reel
M2
HS1A thru HS1M
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
0
0.2
0.4
0.6
0.8
1
1.2
80 90 100 110 120 130 140 150
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1- MAXIMUM AVERAGE FORWARD
CURRENT DERATING
5
10
15
20
25
30
35
40
1 10 100
PEAK FORWARD SURGE URRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
TJ=25
TJ=125
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
HS1A-HS1D
HS1G
HS1J-HS1M
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405050 Version: I14
MARKING DIAGRAM
D 2.41 0.095
E 5.45 0.215
B 1.52 0.060
C 3.93 0.155
SUGG ESTED PAD LAYO UT
Symbol Unit (mm) Unit (inch)
A 1.68 0.066
HS1A thru HS1M
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
0
10
20
30
40
50
60
70
0.1 1 10 100 1000
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
HS1A
-
HS1G
HS1J-HS1M
f=1.0MHz
Vsig=50mVp-p
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405050 Version: I14
HS1A thru HS1M
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,