SOT-363 Plastic-Encapsulated Diode
BAW56DW SWITCHING DIODE
FEATURES
Power dissipation
P
D: 200 mW (Tamb=25℃)
Collector current
I
F: 150 mA
Collector-base voltage
V
R: 75 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) R I
R= 2.5µA 75 V
Reverse voltage leakage current IR VR=75V
VR=20V 2.5
0.025 µA
Forward voltage VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Junction capacitance Cj V
R=0V, f=1MHz 2 pF
Reveres recovery time trr
IF=IR=10mA
Irr=0.1×IR
RL=100Ω
4 nS
SOT -363
MAKING: KJC
Transys
Electronics
LI
M
ITE
D
Typical Characteristics BAW56DW
