© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
This new component series offers high static dv/dt and
low turn off time (tq) sensitive SCR with its small die
planar construction design. It is specifically designed for
GFCI (Ground Fault Circuit Interrupter) and Gas Ignition
applications. All SCRs junctions are glass-passivated to
ensure long term reliability and parametric stability.
Description
Features
Absolute Maximum Ratings
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave)
TO-92 TC = 55°C 0.8 A
SOT-89 TC = 60°C 0.8 A
SOT-223 TL = 60°C 0.8 A
IT(AV) Average on-state current
TO-92 TC = 55°C 0.51 A
SOT-89 TC = 60°C 0.51 A
SOT-223 TL = 60°C 0.51 A
ITSM
Non repetitive surge peak on-state current
(Single cycle, TJ initial = 25°C)
TO-92
SOT-89
SOT-223
F= 50Hz 8 A
F= 60Hz 10 A
I2t I2t Value for fusing tp = 10 ms F = 50 Hz 0.32 A2s
tp = 8.3 ms F = 60 Hz 0.41 A2s
di/dt Critical rate of rise of on-state current IG = 10mA TO-92
SOT-89
SOT-223 TJ = 125°C 50 A/µs
IGM Peak Gate Current tp = 10 μs TJ = 125°C 1.0 A
PG(AV) Average gate power dissipation — TJ = 125°C 0.1 W
Tstg Storage junction temperature range — — -40 to 150 °C
TJOperating junction temperature range — — -40 to 125 °C
Main Features
Symbol Value Unit
IT(RMS) 0.8 A
VDRM /V
RRM 400, 600, or 800 V
IGT 5 to 200 μA
A
K
G
Schematic Symbol
The SxX8xSx EV series is specifically designed for
GFCI (Ground Fault Circuit Interrupter) and gas ignition
applications.
Applications
• RoHS compliant and
Halogen-Free
• Thru-hole and surface
mount packages
• Surge current
capability > 10Amps
• Blocking voltage
( VDRM / VRRM )
capability - up to 800V
• High dv/dt noise immunity
• Improved turn-off time (tq)
< 25 μsec
• Sensitive gate for direct
microprocessor interface
SxX8xSx EV Series RoHS
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Description Test Conditions Limit Value Unit
SxX8yS1 SxX8yS2 SxX8yS
IGT DC Gate Trigger Current VD = 6V
RL = 100 Ω
MIN. 0.5 1 15 μA
MAX. 5 50 200 μA
VGT DC Gate Trigger Voltage VD = 6V
RL = 100 ΩMAX. 0.8 V
VGRM Peak Reverse Gate Voltage IRG = 10μA MIN. 5 V
IHHolding Current RGK = 1 KΩ
Initial Current = 20mA MAX. 5 mA
(dv/dt)s Critical Rate-of-Rise of
Off-State Voltage
TJ = 125°C
VD = VDRM /VRRM
Exp. Waveform
RGK =1 kΩ
MIN. 75 V/μs
VGD Gate Non-Trigger Voltage VD = VDRM
RGK =1 kΩ
TJ = 125°C MIN. 0.2 V
tqTurn-Off Time TJ = 25°C @ 600 V
RGK =1 kΩMAX. 30 25 25 μs
tgt Turn-On Time IG=10mA
PW = 15μsec
IT = 1.6A(pk) TYP. 2.0 2.0 2.0 μs
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Description Test Conditions Limit Value Unit
VTM Peak On-State Voltage ITM = 1.6A (pk) MAX. 1.70 V
IDRM Off-State Current, Peak Repetitive
TJ = 25°C @ VD = VDRM
RGK =1 kΩMAX. 3 μA
TJ = 125°C @ VD = VDRM
RGK =1 kΩMAX. 500 μA
Thermal Resistances
Symbol Description Test Conditions Value Unit
RƟJC Junction to case (AC) IT = 0.8A (RMS)1
TO-92 75 °C/W
SOT-223 30 °C/W
SOT-89 50 °C/W
RƟJC Junction to ambient IT = 0.8A (RMS)1
TO-92 150 °C/W
SOT-223 60 °C/W
SOT-89 90 °C/W
1 60Hz AC resistive load condition, 100% conduction.
Note: x = voltage/100, y = package
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
-40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110 +125
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Junction Temperature (TJ) - °C
Gate Trigger Voltage (VGT) - V
Figure 1: Normalized DC Gate Trigger Current For All
Quadrants vs. Junction Temperature
-40 -15 +25 +65 +105
0.0
0.5
1.0
1.5
2.0
Junction Temperature (TJ) - °C
Ratio of
+125
IGT
IGT (TJ = 25°C)
Figure 4: On-State Current vs. On-State
Voltage (Typical)
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
-55 -35 -15+5 +25 +45 +65 +85 +105
0.0
1.0
2.0
3.0
4.0
Junction Temperature (TJ) - °C
+125
IH (TJ = 25°C)
IH
Ratio of
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-state Current [IT(RMS)] - Amps
Average On-state Power Dissipation
[PD(AV)] - Watts
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
0
2
4
6
8
10
0.91.3 1.72.1 2.52.9 3.33.7
Instantaneous On-state Current (IT) –Amps
Instantaneous On-state Voltage (VT) –Volts
SxX8xS
SxX8xS1
SxX8xS2
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
50
60
70
80
90
100
110
120
130
RMS On-state Current [IT(RMS)] - Amps
Maximum Allowable Case Temperature
(TC) - oC
TO-92
SOT-223 & SOT-89
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 8-1: Typical DC Holding Current with RGK vs.
Junction Temperature for S6X8BS
Figure 7-1: Typical DC Gate Trigger Current with RGK vs.
Junction Temperature for S6X8BS
Figure 7-2: Typical DC Holding Current with RGK vs.
Junction Temperature for S8X8ESRP
Figure 7-2: Typical DC Gate Trigger Current with RGK vs.
Junction Temperature for S8X8ESRP
Figure 9-1: Typical DC Static dv/dt with RGK vs.
Junction Temperature for S6X8BS
Figure 9-2: Typical DC Static dv/dt with RGK vs.
Junction Temperature for S8X8ESRP
Trigger Current IGT (mA)
Trigger Current IGT (mA)
Holding Current IH (mA)
Holding Current IH (mA)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 11: Surge Peak On-State Current vs. Number of Cycles
Surge Current Duration - Full Cycle
123
45
678910 20 30 40 60 80 100 200 300 400 600 1000
1
2
3
4
5
6
7
8
9
10
20
Peak Surge (Non-repetitive) On-State
Current (ITSM) – Amps .
0.8 A Components
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [IT(RMS)]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
Figure 10-1: Typical DC turn off time with RGK vs.
Junction Temperature for S6X8BS
Figure 10-2: Typical DC turn off time with RGK vs.
Junction Temperature for S8X8ESRP
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Soldering Parameters
Reflow Condition Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))150°C
- Temperature Max (Ts(max))200°C
- Time (min to max) (ts)60 – 180 secs
Average ramp up rate (Liquidus Temp)
(TL) to peak 5°C/second max
TS(max) to TL - Ramp-up Rate 5°C/second max
Reflow - Temperature (TL) (Liquidus) 217°C
- Time (min to max) (ts)60 – 150 seconds
Peak Temperature (TP)260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)20 – 40 seconds
Ramp-down Rate 5°C/second max
Time 25°C to peak Temperature (TP)8 minutes Max.
Do not exceed 280°C
Time
Temperature
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
P
r
e
h
eat
Ramp-upRamp-up
Ramp-down
R
am
p
-
do
Additional Information
Datasheet Samples
Resources
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Physical Specifications
Terminal Finish 100% Matte Tin-plated.
Body Material UL Recognized compound meeting
flammability rating V-0
Lead Material Copper Alloy
Reliability/Environmental Tests
Test Specifications and Conditions
AC Blocking MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 110°C for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
High Temp Storage MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage 1008 hours; -40°C
Resistance to
Solder Heat MIL-STD-750 Method 2031
Solderability ANSI/J-STD-002, category 3, Test A
Lead Bend MIL-STD-750, M-2036 Cond E
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
Dimensions – TO-92
Dimension Inches Millimeters
Min Max Min Max
A 0.175 0.205 4.450 5.200
B 0.170 0.210 4.320 5.330
C 0.500 12.70
D 0.135 3.430
E 0.125 0.165 3.180 4.190
F 0.080 0.105 2.040 2.660
G 0.016 0.021 0.407 0.533
H 0.045 0.055 1.150 1.390
I 0.095 0.105 2.420 2.660
J 0.015 0.020 0.380 0.500
A
G
H
I
F
E
J
D
F
C
B
T MEASURING POINT
C
SEATING
PLANE
GATE
ANODE
CATHODE
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Dimensions – SOT-223
Dimensions in Millimeters (Inches)
Recommended Soldering Footprint
for SOT223
1.5
(0.059”)
1.5
(0.059”)
3.3
(0.130”)
6.4
(0.252”)
4.6
(0.181”)
1.2
(0.047”) 2.3
(0.091”)
(3x)
Anode
Gate
Anode
Cathode
.064
(1.63)
.154
(3.91)
.036
(0.91)
.044
(1.12)
.047
(1.19)
.087
(2.21)
.064
(1.63)
Pad Layout for SOT-89
Dimensions in Millimeters (Inches)
Dimensions – SOT-89
Anode
Gate
Anode
Cathode
Anode
Gate
Anode
Cathode
F
G
A
J
D
B
E
C
H
g
a
fd
b
c
e
Tc Measuring Point
Anode
Cathode
Anode
Gate
F
G
A
J
D
B
E
C
H
g
a
fd
b
c
e
Tc Measuring Point
Anode
Cathode
Anode
Gate
Dimension Inches Millimeters
Min Typ Max Min Typ Max
A 0.173 — 0.181 4.40 — 4.60
B 0.090 — 0.102 2.29 — 2.60
C 0.055 — 0.063 1.40 — 1.60
D 0.155 — 0.167 3.94 — 4.25
E 0.035 — 0.047 0.89 — 1.20
F 0.056 — 0.062 1.42 — 1.57
G 0.115 — 0.121 2.92 — 3.07
H 0.014 — 0.017 0.35 — 0.44
I 0.014 — 0.019 0.36 — 0.48
J 0.064 — 0.072 1.62 — 1.83
F
G
A
J
D
B
E
C
H
g
a
fd
b
c
e
Tc Measuring Point
Anode
Cathode
Anode
Gate
Dimensions Inches Millimeters
Min Typ Max Min Typ Max
A 0.248 0.256 0.264 6.30 6.50 6.70
B 0.130 0.138 0.146 3.30 3.50 3.70
C — — 0.071 — — 1.80
D 0.001 — 0.004 0.02 — 0.10
E 0.114 0.118 0.124 2.90 3.00 3.15
F 0.024 0.027 0.034 0.60 0.70 0.85
G — 0.090 — — 2.30 —
H — 0.181 — — 4.60 —
I 0.264 0.276 0.287 6.70 7. 0 0 7.30
J 0.009 0.010 0.014 0.24 0.26 0.35
K10° MAX
Anode
Gate
Anode
Cathode
F
G
A
J
D
B
E
C
H
g
a
fd
b
c
e
Tc Measuring Point
Anode
Cathode
Anode
Gate
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Packing Options
Part Number Marking Weight Packing Mode Base Quantity
SxX8ESy SxX8ESy 0.217g Bulk 2500
SxX8ESyAP SxX8ESy 0.217g Ammo Pack 2000
SxX8ESyRP SxX8ESy 0.217g Tape & Reel 2000
SxX8TSyRP SxX8TSy 0.120g Tape & Reel 1000
SxX8BSRP xX8 0.053g Tape & Reel 1000
SxX8BSRP1 xX8 0.053g Tape & Reel 1000
Note: x = voltage/100, y = gate sensitivity
Part Number Voltage Gate Sensitivity Package
400V 600V 800V
S4X8ES X — — 200 μA TO-92
S6X8ES — X — 200 μA TO-92
S8X8ES — — X 200 μA TO-92
S4X8TS X — — 200 μA SOT-223
S6X8TS — X — 200 μA SOT-223
S8X8TS — — X 200 μA SOT-223
S4X8BS X — — 200 μA SOT-89
S6X8BS — X — 200 μA SOT-89
S4X8ES1 X — — 5 μA TO-92
S6X8ES1 — X — 5 μA TO-92
S8X8ES1 — — X 5 μA TO-92
S4X8TS1 X — — 5 μA SOT-223
S6X8TS1 — X — 5 μA SOT-223
S8X8TS1 — — X 5 μA SOT-223
S4X8ES2 X — — 50 μA TO-92
S6X8ES2 — X — 50 μA TO-92
S8X8ES2 — — X 50 μA TO-92
S4X8TS2 X — — 50 μA SOT-223
S6X8TS2 — X — 50 μA SOT-223
S8X8TS2 — — X 50 μA SOT-223
Product Selector
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications
Meets all EIA-468-C Standards
0.708
(18.0)
1.6
(41.0)
0.5
(12.7) 0.1 (2.54)
0.2 (5.08)
0.236
(6.0)
0.02 (0.5)
Direction of Feed
Dimensions
are in inches
(and millimeters).
1.97
(50.0)
14.17(360.0)
Flat up
1.26
(32.0)
0.098 (2.5) MAX
Cathode Anode
Gate
0.354
(9.0)
0.157 DIA
(4.0)
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications
Meets all EIA-468-C Standards
Flat down
25 Components per fold
Cathode
Anode
Gate
Direction of Feed
Dimensions
are in inches
(and millimeters).
0.708
(18.0)
1.62
(41.2)
0.5
(12.7)
0.1 (2.54)
0.2 (5.08)
0.236
(6.0)
0.02 (0.5)
1.85
(47.0)
13.3
(338.0)
1.27
(32.2)
0.098 (2.5) MAX
12.2
(310.0)
1.85
(47.0)
0.354
(9.0)
0.157 DIA
(4.0)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
SOT-89 Reel Pack (RP1) Specifications
4mm 8mm
1.5mm
13 mm Abor
Hole Diameter
180 mm
13.4 mm
2mm
12mm
ANODE GATE
ANODE
1.75mm
5.5mm
DIRECTION OF FEED
CATHODE
Ф
SOT-89 Reel Pack (RP) Specifications
4 mm 8 mm
Ø1.5 mm
13 mm Abor
Hole Diameter
180 mm
13.4 mm
2 mm
12 mm
GATE CATHODE
ANODE
ANODE
1.75 mm
5.5 mm
DIRECTION OF FEED
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Part Numbering System
CURRENT
X8: 0.8A SENSITIVITY & TYPE
S1: 5
µA Sensitive SCR
S2: 50
µA Sensitive SCR
S: 200
µA Sensitive SCR
PACKAGE TYPE
E: TO-92
T: SOT-223
B: SOT-89
PACKING TYPE
SERIES
S: SCR Blank: Bulk Pack
RP: Reel Pack (TO-92)
Embossed Carrier Pack (SOT-223)
Embossed Carrier Pack (SOT-89)
RP1: Embossed Carrier Pack (SOT-89)
(alternate orientation)
AP: Ammo Pack (TO-92)
SxX8
VOLTAGE
4: 400V
6: 600V
8: 800V
xxx xx
Part Marking System
SOT-223 Reel Pack (RP) Specifications
4 mm 8 mm
∅1.5 mm
13 mm Abor
Hole Diameter
180 mm
13.4 mm
2 mm
12 mm
K GATE
A
A
5.5 mm
1.75 mm
Line1 = Littelfuse Part Number
Line2 = continuation…Littelfuse Part Number
Y = Last Digit of Calendar Year
M = Letter Month Code (A-L for Jan-Dec)
L = Location Code
DD = Calendar Date
TO-92
SOT89 SOT223
