MMBF4393LT1G - ON SEMICONDUCTOR - Datasheet.Directory

May, 2012 − Rev. 10

1Publication Order Number:

MMBF4391LT1/D

MMBF4391LT1G,

SMMBF4391LT1G,

MMBF4392LT1G,

MMBF4393LT1G

JFET Switching Transistors

N−Channel

Features

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage VDS 30 Vdc

Drain−Gate Voltage VDG 30 Vdc

Gate−Source Voltage VGS 30 Vdc

Forward Gate Current IG(f) 50 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−23

CASE 318

STYLE 10

See detailed ordering, marking and shipping information in the

package dimensions section on page 2 of this data sheet.

MARKING & ORDERING INFORMATION

http://onsemi.com

2 SOURCE

GATE

1 DRAIN

XXX = Specific Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MARKING DIAGRAM

XXX M G

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(IG = 1.0 mAdc, VDS = 0)

V(BR)GSS 30 −Vdc

Gate Reverse Current

(VGS = 15 Vdc, VDS = 0, TA = 25°C)

(VGS = 15 Vdc, VDS = 0, TA = 100°C)

IGSS

−

1.0

0.20

nAdc

mAdc

Gate−Source Cutoff Voltage

(VDS = 15 Vdc, ID = 10 nAdc)

MMBF4391LT1, SMMBF4391LT1

MMBF4392LT1

MMBF4393LT1

VGS(off)

−4.0

−2.0

−0.5

−10

−5.0

−3.0

Vdc

Off−State Drain Current

(VDS = 15 Vdc, VGS = −12 Vdc)

(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)

ID(off)

−

1.0

nAdc

mAdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current

(VDS = 15 Vdc, VGS = 0)

MMBF4391LT1, SMMBF4391LT1

MMBF4392LT1

MMBF4393LT1

IDSS

5.0

150

mAdc

Drain−Source On−Voltage

(ID = 12 mAdc, VGS = 0)

MMBF4391LT1, SMMBF4391LT1

(ID = 6.0 mAdc, VGS = 0)

MMBF4392LT1

(ID = 3.0 mAdc, VGS = 0)

MMBF4393LT1

VDS(on)

−

0.4

Vdc

Static Drain−Source On−Resistance

(ID = 1.0 mAdc, VGS = 0)

MMBF4391LT1, SMMBF4391LT1

MMBF4392LT1

MMBF4393LT1

rDS(on)

−

100

SMALL−SIGNAL CHARACTERISTICS

Input Capacitance

(VDS = 0 Vdc, VGS = −15 Vdc, f = 1.0 MHz)

Ciss

−14

Reverse Transfer Capacitance

(VDS = 0 Vdc, VGS = −12 Vdc, f = 1.0 MHz)

Crss

−3.5

ORDERING INFORMATION

Device Marking Package Shipping†

MMBF4391LT1G 6J SOT−23

(Pb−Free)

3,000 / Tape & Reel

SMMBF4391LT1G* 6J SOT−23

(Pb−Free)

MMBF4392LT1G 6K SOT−23

(Pb−Free)

MMBF4393LT1G M6G SOT−23

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G

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TYPICAL CHARACTERISTICS

TJ = 25°C

ID, DRAIN CURRENT (mA)

, TURN-ON DELAY TIME (ns)

d(on)

5.0

2.0

0.5 1.0 3.0 7.05.0

1.0

100

0.7 2.0 10 20

ID, DRAIN CURRENT (mA)

, RISE TIME (ns)

Figure 1. Turn−On Delay Time Figure 2. Rise Time

RK = RD'

RK = 0

RK = RD'

RK = 0

ID, DRAIN CURRENT (mA)

, TURN-OFF DELAY TIME (ns)

d(off)

Figure 3. Turn−Off Delay Time

RK = RD'

RK = 0

ID, DRAIN CURRENT (mA)

Figure 4. Fall Time

RK = RD'

RK = 0

, FALL TIME (ns)

MMBF4391

MMBF4392

MMBF4393

30 50

200

500

1000

0.5 1.0 3.0 7.05.00.7 2.0 10 20 30 50

5.0

2.0

1.0

100

200

500

1000

0.5 1.0 3.0 7.0

5.0

0.7 2.0 10 20 30 500.5 1.0 3.0 7.0

5.0

0.7 2.0 10 20 30 50

5.0

2.0

1.0

100

200

500

1000

5.0

2.0

1.0

100

200

500

1000

TJ = 25°C

MMBF4391

MMBF4392

MMBF4393

TJ = 25°C

MMBF4391

MMBF4392

MMBF4393

TJ = 25°C

MMBF4391

MMBF4392

MMBF4393

VGS(off) = 12 V

= 7.0 V

= 5.0 V

VGS(off) = 12 V

= 7.0 V

= 5.0 V

VGS(off) = 12 V

= 7.0 V

= 5.0 V

VGS(off) = 12 V

= 7.0 V

= 5.0 V

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G

http://onsemi.com

Figure 5. Switching Time Test Circuit

Figure 6. Typical Forward Transfer Admittance Figure 7. Typical Capacitance

ID, DRAIN CURRENT (mA)

2.0

5.0

3.0

7.0

0.5 1.0 3.0 7.05.0 5030

0.7 2.0 10 20

, FORWARD TRANSFER ADMITTANCE (mmhos)

2.0

3.0

5.0

7.0

0.5 1.0 3.0 305.00.30.1 100.050.03

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Tchannel = 25°C

VDS = 15 V Tchannel = 25°C

(Cds is negligible

Cgs

VDD

VGG

RGG

RGEN

50 W

VGEN

OUTPUT

INPUT

SET VDS(off) = 10 V

INPUT PULSE

tr ≤ 0.25 ns

tf ≤ 0.5 ns

PULSE WIDTH = 2.0 ms

DUTY CYCLE ≤ 2.0%

RGG > RK

RD' = RD(RT + 50)

RD + RT + 50

Figure 8. Effect of Gate−Source Voltage

on Drain−Source Resistance

120

160

200

1.0 3.0 170

5.0 20-10-40

2.0 80 140-70

VGS, GATE-SOURCE VOLTAGE (VOLTS)

4.00

100 mA 125 mA

75 mA50 mA

25 mA

IDSS

= 10

Tchannel = 25°C

Figure 9. Effect of Temperature on Drain−Source

On−State Resistance

1.8

1.0

2.0

1.2

1.4

1.6

0.8

0.6

0.4

ID = 1.0 mA

VGS = 0

, DRAIN-SOURCE ON-STATE

DS(on)

RESISTANCE (NORMALIZED)

Tchannel, CHANNEL TEMPERATURE (°C)

1.5

1.0

Cgd

110

6.0 7.0 8.0

r , DRAIN-SOURCE ON-STATE

DS(on) RESISTANCE (OHMS)

MMBF4393

MMBF4392 MMBF4391

NOTE 1

The switching characteristics shown above were measured using

a test circuit similar to Figure 5. At the beginning of the switching

interval, the gate voltage is at Gate Supply Voltage (−VGG). The

Drain−Source Voltage (VDS) is slightly lower than Drain Supply

Voltage (VDD) due to the voltage divider. Thus Reverse Transfer

Capacitance (Crss) of Gate−Drain Capacitance (Cgd) is charged to

VGG + VDS.

During the turn−on interval, Gate−Source Capacitance (Cgs)

discharges through the series combination of RGen and RK. Cgd must

discharge to VDS(on) through RG and RK in series with the parallel

combination of effective load impedance (R’D) and Drain−Source

Resistance (rDS). During the turn−off, this charge flow is reversed.

Predicting turn−on time is somewhat difficult as the channel

resistance rDS is a function of the gate−source voltage. While Cgs

discharges, VGS approaches zero and rDS decreases. Since Cgd

discharges through rDS, turn−on time is non−linear. During turn−off,

the situation is reversed with rDS increasing as Cgd charges.

The above switching curves show two impedance conditions; 1)

RK is equal to RD’ which simulates the switching behavior of

cascaded stages where the driving source impedance is normally the

load impedance of the previous stage, and 2) RK = 0 (low

impedance) the driving source impedance is that of the generator.

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G

http://onsemi.com

Figure 10. Effect of IDSS on Drain−Source

Resistance and Gate−Source Voltage

IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)

, DRAIN-SOURCE ON-STATE

DS(on)

30 40 50 60 70

RESISTANCE (OHMS)

1.0

2.0

3.0

4.0

5.0

, GATE-SOURCE VOLTAGE

(VOLTS)

Tchannel = 25°C

VGS(off)

rDS(on) @ VGS = 0

6.0

7.0

8.0

9.0

100

80 90 100 110 120 130 140 150

NOTE 2

The Zero−Gate−Voltage Drain Current (IDSS) is the

principle determinant of other J−FET characteristics.

Figure 10 shows the relationship of Gate−Source Off

Voltage (VGS(off)) and Drain−Source On Resistance

(rDS(on)) to IDSS. Most of the devices will be within

±10% of the values shown in Figure 10. This data will

be useful in predicting the characteristic variations for

a given part number.

For example:

Unknown

rDS(on) and VGS range for an MMBF4392

The electrical characteristics table indicates that an

MMBF4392 has an IDSS range of 25 to 75 mA. Figure

10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for

IDSS = 75 mA. The corresponding VGS values are 2.2 V

and 4.8 V.

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 10:

PIN 1. DRAIN

2. SOURCE

3. GATE

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Phone: 81−3−5817−1050

MMBF4391LT1/D

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