AP9452AGG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Capable of 2.5V Gate Drive Single Drive Requirement BVDSS 20V RDS(ON) 50m ID G RoHS Compliant & Halogen-Free 4A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SOT-89 D S G Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 20 V +12 V 3 4 A 3 2.5 A 12 A 1.25 W Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 100 /W 1 200910191 AP9452AGG-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=4A - - 38 m VGS=4.5V, ID=4A - - 50 m VGS=2.5V, ID=3A - - 80 m 0.4 - 1.2 V VDS=5V, ID=3A - 12.6 - S VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS= +12V, VDS=0V - - +100 nA ID=4A - 7 11.2 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 - nC VDS=10V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 9.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 13 - ns tf Fall Time RD=10 - 5 - ns Ciss Input Capacitance VGS=0V - 260 415 pF Coss Output Capacitance VDS=20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 1.6 - Min. Typ. IS=1A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=2A, VGS=0V, - 18.5 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mount on FR4 board, t < 10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9452AGG-HF 20 20 o 5.0V 4.5V 3.5V 2.5V V GS =2.0V ID , Drain Current (A) 16 5.0V 4.5V 3.5V 2.5V o T A =150 C 16 ID , Drain Current (A) T A =25 C 12 8 4 V GS = 2.0 V 12 8 4 0 0 0 1 2 3 4 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 37 1.8 ID=3A T A =25 o C I D =4A 1.6 Normalized RDS(ON) RDS(ON) (m) 35 33 31 V GS =4.5V 1.4 1.2 29 1.0 27 0.8 25 0.6 1 2 3 4 5 6 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 4 IS (A) 3 T j =150 o C T j =25 o C 2 1 1.2 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source -to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9452AGG-HF 8 f=1.0MHz 400 6 300 V DS = 10 V V DS =12V V DS =1 6 V C (pF) VGS , Gate to Source Voltage (V) ID=4A 4 C iss 200 C oss C rss 100 2 0 0 0 2 4 6 8 10 1 12 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) 100us 1 1ms 10ms 100ms 1s DC 0.1 o T A =25 C Single Pulse Normalized Thermal Response (Rthjc) 1 10 ID (A) 9 V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Rthja=100/W Single Pulse 0.01 0.01 0.01 0.1 1 10 100 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q