MIL-PRF-19500/435N
9 February 201 6
SUPERSEDING
MIL-PRF-19500/435M
5 September 2 014
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR,
ENCAPSULATED (AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND
UN-ENCAPSULATED (DIE), TYPES 1N4099 THRO U GH 1N4135, 1N4614 THROUGH 1N4627, C AND D
TOLERANCE SUFFIX DEVICES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specif ication is approved for use by all D epartments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specif ication sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This s pec i fication covers the performance requirements for 500 mil liwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four level s of product assurance
(JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated d ev i c e. Two levels of product assur ance
(JANHC and JANKC) ar e provided for each unencapsulated device (die) . For JANHC an d JANKC quality levels see
6.6.2.
* 1.2 Package outlines. The device package outlines are as follows: DO-35 in accordance with f i gure 1, DO-213AA
in accordance with figure 2, die in accorda nce with figure 3, UB, UBCA, UBD, and UBCC in accordance with figure 4,
UB2 and UB2R in accordance with fi gure 5.
1.3 Maximum ratings Unless otherwise s pecified TC = 25°C. Maximum ratings are as shown in ma x i m um test
ratings herein (see 3.8), and as follows:
a. PTL = 500 mW (DO-35) at TL = 50°C, L = .375 inch (9.53 mm); both ends of c as e or diode body to heat sink at
L = .375 inch (9. 53 mm). (Derate to 0 at +175°C).
b. PTEC = 500 mW (DO-213AA) at TEC = 125°C. (Derate to 0 at 175°C).
-65°C ≤ TJ ≤ +175°C; -65°C ≤ TSTG ≤ +175°C.
c. PTPCB = 400 mW, TA = +55°C. (Derate to 0 at +175°C).
d. PSP(IS) = 500 mW (UB) at TSP(IS) = 125°C. (Derate to 0 at 175°C).
-65°C ≤ TJ ≤ +175°C; -65°C ≤ TSTG ≤ +175°C.
Comments, suggestions, or questions on thi s document should be a ddressed to DLA Land and Mariti me, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since contact
information c an change, you may want to verify the currency of thi s address inform ation using the ASSIST O nl ine
database at https://assist.dla.mil.
AMSC N/A FSC 5961
INCH-POUND
The documentation and proc ess conversion
measures nec essary to comply with this revision
shall be completed by 9 May 2016.
MIL-PRF-19500/435N
2
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in prim ary test ratings herein
(see 3.8) and a s follows:
a. 1.8 V dc ≤ VZ ≤ 100 V dc.
b. RθJL = 250°C/W (m aximum) at L = .375 inch ( 9.53 mm) (DO-35).
c. Noise density see 4.5.5 and figure 6.
d. RθJEC = 100°C/W (maximum) junction t o end-caps (DO-213AA).
e. See figure 7 , 8, and 9 for derating curves . TA = +75°C for both axial and Met al E lectrical Leadless Face
(MELF) (US) on printe d c i rcuit board (PCB) , PCB = FR4 .0625 i nch (1.59 mm) 1-layer 1-Oz Cu, horizontal,
still air, pads (US) = .05 inch (1. 27 mm) x .087 inch (2.21 mm); pads (Axial) = .092 inch (2.34 mm) diameter,
strip = .030 inch (0.762 mm) x 1 i nc h (25.4 mm) long, axial lead length L ≤ .125 inch (≤ 3.18 mm); RθJA with
a defined ther m al r esistance condition included is measured at IO = 1 A.
f. RθJA = 300°C/W. Junct i on to ambient including PCB, see 1.4.e herein.
g. RθJSP(IS) = 90°C/W (maximum) junction to solder pad (IS) (UB).
h. RθJA(PCB) = 250°C/W (maximum) junction to ambient (PCB) (UB).
i. For thermal impedance curves, see figures 10, 11, 12, 13, and 14.
* 1.5 Part or Ident i fying Number (P IN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.
See 6.5 for PIN construction example and 6.6 for a list of available PINs .
* 1.5.1 JAN certification mark and quality level for encapsulated devices. The quality level designators for
encapsulated devices that are applicable for this specification sheet from t he l owest to the highes t level are as
follows: “JAN”, “JANTX”, “JANTXV” and "JANS".
* 1.5.2 JAN certification mark and quality level for unencapsu l ated devices (die). The quality level designat or s for
unencapsulated devices (die) that are applicable for this s pec i fication sheet from the lowest to the highest level are as
follows: "JANHC" and "JANKC".
* 1.5.3 Device t yp e. The designation system for the device types of diodes covered by this specific ation sheet are
as follows.
* 1.5.3.1 First number and first l etter symbols. The diodes of this specification sheet us e the first number and l etter
symbols "1N".
* 1.5.3.2 Second num ber symbols. The second number symbols for the diodes covered by this specification sheet
are as follows: "4099", "4100", “4101”, “4102”, “4103”, “4104”, “4105”, “4106”, “4107”, “4108”, “4109”, “4110”, “4111”,
“4112”, “411 3”, “4114”, “4115”, “4116”, "4117", “4118”, “4119”, “4120”, “41 21”, “4122”, “4123”, “4124”, “4125”, “4126”,
“4127”, “412 8”, “4129”, “4130”, “4131”, “4132”, “4133”, “413 4”, “4135”, “4614”, “4615”, “4616”, “4617”, “4618”, “4619”,
“4620”, “462 1”, “4622”, “4623”, “4624”, “4625”, “4626”, and “4627”.
* 1.5.3.3 First suffix symbols. Following the second number symbols, no suffix letter indica tes 5 percent volt age
tolerance. The suffix letter "C" is used on devices t hat have a 2 percent v oltage tolerance, the suffix lett er D is used
on devices that have a 1 percent voltage tolerance.
MIL-PRF-19500/435N
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* 1.5.3.4 Second suffi x symbo ls. The f oll owing suffix symb ols are incorporated in the PIN for t hi s specification
sheet:
-1 Indicates an axial through-hole mount (DO-35) pac kage with a metallurgical bond. (see f igure 1).
UR-1 Indicates a surface mount, round endcap (DO-213AA) package with a met allurgical bond. (see figure 2)
UB Indicates a 4 pad surface mount pac kage. The met al l id i s connected to pad 4 (one diode with cathode
connected to t wo l eads, see fi gure 4).
UBCA Indicates a 4 pad surface mount pac kage. The met al l id i s connected to pad 4, (two diodes with common
anode, see figure 4).
UBD Indicates a 4 pad surface mount pac kage. The met al l id i s connected to pad 4, (two diodes with one
anode and one c athode common, see fi gure 4).
UBCC Indicates a 4 pad surface mo unt package. T he m etal lid is connected to pad 4, (t wo dio des with common
cathode, see f igure 4).
UB2 Indicates a 4 pad surface mount pac kage. The met al l id i s connected to pad 4, (one diode, s ee f ig ure 5).
UB2R Indicates a 4 pad surface mount package. The metal lid is connected to pad 4, (one diode, reverse
polarity of UB 2, see figure 5).
* 1.5.4 Lead fini s h. The lead finish es applicable to this specification sheet are l isted on QPDSIS-19500.
* 1.5.5 Die identifiers for unencapsulated dev ices (manufacturers and criti cal interface i dentifiers). The
manufacturer die identifiers that are applicable for this spec ification sheet is "A" (see figure 3 and 6.6).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this sect ion are specified in sections 3 and 4 of t his specification. This
section does n ot include documents cited in other sections of this specification or recommended for additio nal
information or as examples. While every effor t has been made to e nsure the completeness of thi s l ist, document
users are cautioned that they must meet all speci fied requirem ents of documents cited in sections 3 and 4 of this
specificati on, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The foll owing specifications, standards, and handbooks form a
part of this document to the extent specifie d herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitatio n or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devic es, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Copies of these documents a re available online at http://quicksearch.dla.mil.)
2.3 Order of prec edence. Unless ot herwise noted her ein or in the contr act, in t he ev ent of a conflict between the
text of this document and the references cited herei n, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a s pecific exemption has been obtai ned.
MIL-PRF-19500/435N
4
Ltr
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
.056
.090
1.42
2.29
3
BL
.140
.200
3.56
5.08
3
LD
.018
.022
0.46
0.56
LL
1.000
1.500
25.40
38.10
LL1
.050
1.27
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for gen eral informati on only.
3. Package cont our optional within BD and length BL. Heat slugs, if any, shall be
included within this cylinder but shall not be subject to mi nimum limit of BD. The BL
dimension shall include the entire body incl uding slugs.
4. Within this z one lead, diamet er may vary to allow for lead finishes and irregular i ties
other than heat slugs.
5. In accordanc e with ASME Y14.5M, di ameters are equivalent to φx symbology.
FIGURE 1. Semiconductor device, diode, types 1N4099-1 through
1N4135-1 and 1N4614-1 through 1N4627-1 ( D O-35).
MIL-PRF-19500/435N
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Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
BD
.063
.067
1.60
1.70
ECT
.016
.022
0.41
0.56
BL
.130
.146
3.30
3.71
S
.001 min
0.03 min
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general informati on only.
3. In accordanc e with ASME Y14.5M, di ameters are equivalent to Φx symbology.
FIGURE 2. Physical dimensions 1N4099UR-1 through 1N4135UR-1 and
1N4614UR-1 t hrough 1N4627UR-1 (DO-213AA).
MIL-PRF-19500/435N
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JANHCA and JANKCA
JANHCB and JANKCB
Ltr
Inches
Millimeters
Ltr
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
A
.021
.025
0.53
0.63
A
.024
.028
0.61
0.71
B
.013
.017
0.33
0.43
B
.017
.021
0.43
0.53
JANHCC and JANKCC
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.019
.023
0.48
0.58
B
.013
.017
0.33
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are gi v en for general information only.
3. The JANHCA and J A N K CA die thickness is .010 (0.25 mm) ±.002 inches (±0.0 5 mm).
Anode metallization: Al, thickness = 25,000 Å minimum;
cathode metallization: Au, thickness = 4,000 Å minimum.
4. The JANHCB and J A N K CB die thickness is .010 (0.25 mm) ±.002 inches (±0.0 5 mm).
Anode metallization: Al, thickness = 40,000 Å minimum;
cathode metallization: Au, thickness = 5,000 Å minimum.
5. The JANHCC and J ANKCC die thickness is .010 (0.25 mm) ±.002 inches (±0.05 mm).
Anode metallization: Al, t hickness = 25,000 Å m i nimum;
cathode metallization: Au, thickness = 4,000 Å minimum.
6. Circuit layout data: For zener op er ation, cathode m ust be operated positive with res pect to
anode.
7. In accordance with ASME Y14.5M, diameters are equ i v alent to Φx symbology.
FIGURE 3. Physical dimensions JANHC and JANK C die.
MIL-PRF-19500/435N
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Symbol
Dimensions
Symbol
Dimensions
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS1
.035
.039
0.89
0.99
BL
.115
.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
.085
.108
2.16
2.74
LW
.016
.024
0.41
0.61
CL
.128
3.25
r
.008
0.20
CW
.108
2.74
r1
.012
0.31
LL1
.022
.038
0.56
0.97
r2
.022
0.56
LL2
.017
.035
0.43
0.89
NOTES:
1. Dimensions are in inches. Millimeters are giv en for general information only.
2. Ceramic pack age only.
3. Hatched areas on package denote metallized ar eas. Pad 4 = shieldi ng, connected t o the lid.
4. Dimensions are pre-solder dip.
5. In accordanc e with ASME Y14.5M, di ameters are equivalent to Φx symbology.
FIGURE 4. Physical dimensions, surface mount (UB version).
UBCA
UBD
UB
UBCC
MIL-PRF-19500/435N
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Symbol
Dimensions
Symbol
Dimensions
Inches Millimeters Inches Millimeters
Min Max Min Max Min Max Min Max
BH .046 .056 1.17 1.42 LS .071 .079 1.80 2.01
BL
.115
.128
2.92
3.25
LW
.016
.024
0.41
0.61
BW .085 .108 2.16 2.74 r .008 TYP 0.20 TYP
CL
.128
3.25
r1
.012 TYP
0.30 TYP
CW
.108
2.74
r2
.022 TYP
0.56 TYP
LL1 .022 .038 0.56 0.96 r3 .008 TYP 0.20 TYP
LL2
.017
.035
0.43
0.89
r4
.012 TYP
0.30 TYP
NOTES:
1. Dimensions are in inches. Millimeters are giv en for general information only.
2. Ceramic pack age only.
3. Hatched areas on package denote metallized ar eas. Pad 4 = shieldi ng, connected t o the lid.
4. Dimensions are pre-solder dip.
5. In accordanc e with ASME Y14.5M, di ameters are equivalent to Φx symbology.
FIGURE 5. Physical dimensions, surface mount (2 pin U B2 version).
UB2
UB2R
MIL-PRF-19500/435N
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3. REQUIREMENTS
3.1 General. The individual item requirements shall be as spec ified in MIL-PRF-19500 and as modifi ed herein.
3.2 Qualification. Devices furnished under this specifi c ation shall be pr oducts that are manufactured by a
manufacturer authorized by t he qualifying activity for list ing on the appli c able qualified manufacturer's l ist (QML)
before contrac t award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, s ymbols, and defin itions used herein shall be as
specified in MIL-PRF-19500 and as follows:
C 2 percent voltage tolerance.
D 1 percent volt age tolerance.
TEC Temperature of end-cap.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as spec i fied in
MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish s hal l be solderabl e as defined in MIL-PRF-19500, MIL-STD-750, an d herein. Where
a choice of lead finish is desir ed, it shall be speci fied in the acqu isition document ( see 6.2).
3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500.
3.4.3 Dash on e c onstruction. Das h one (-1) diodes shall be of metal lurgically bonded double plug construction or
straight through construct ion in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).
3.4.4 JANS construction. Construct i on s hall be dash one or straight through c onstruction, category I or II
metallurgical bond in accor dance with MIL-PRF-19500.
3.4.5 Package outline. This specification contains one stan dard package; DO-35. Any user of thi s specificatio n
that has a specific package ou tline requirement shall specify their prefer ence in the acquisition order . If package st yle
is not specifi ed, the manufactur er may supply either package. Surface mount devices are in a DO-213AA package.
3.5 Marking. Marking shal l be in accordance with MIL-PRF-19500 and as specifie d herein.
3.5.1 Polarity. The polarit y shall be indicated with a contrasting color band to denote the cat hode end. Alternately,
for surface mount (UR) devices, a minimum of three evenly s paced contrast i ng c olor dots aroun d the periphery of the
cathode end may be used. No color c oding will be permitted.
3.5.2 Marking of UR suffix version devices. For UR suffix (surface mount) devices only, all marking (except
polarity) may be omitted from the body of the device, but shall be ret ained on the initial container.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical perf ormance
characteristics are as speci fied in 1.3, 1.4, and table I herein.
3.6.1 Selecti on of tight tolerance devices. The C and D suffi x d evices shall be selected from JAN, JANTX,
JANTXV, or JANS devic es which have successfully comp l eted all applicable screening, table I, and groups B and C
testing as 5 percent toleranc e devices. All s ublots of C and D suffix devices shall pass table I, subgroup 2 at the
tightened tolerances. T he PTL or PTEC for C and D suffix devices shall b e maintained at 30°C ±2°C for VZ
correlation on tight tolerances.
MIL-PRF-19500/435N
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3.7 Electrical test requirements. The elect rical test requir ements shall be the subgroups spec ified in 4.4.2, 4.4.3,
table I, II, and III.
3.8 Maximum and primary electrical characteristics test requirements. Maximum test ratings for voltage regulator
diodes are specified in table III herein.
3.9 Workmanship. Semiconduc tor devices, diode, silicon, low-noise volt age regulator, shall be processed in such
a manner as to be uniform in quality and shall be free f rom other defects that will affect life, serviceability, or
appearance.
4. VERIFICATION
4.1 Classific ation of inspections. The inspection requirements specif i ed herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (s ee 4.3).
c. Conformance ins pection (see 4.4, tables I and II ) .
4.2 Qualification inspection. Qualification inspection s hall be in accordance with MIL-PRF-19500 and as specif ied
herein.
4.2.1 Group E qua li fication. Group E inspection shall be performed for qualific ation or re-qualifi cation only. I n
case qualification was awarded to a prior revision of the spe cification sheet that did not reques t the perfor m ance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be per formed on
the first inspec tion lot of t hi s revision to maintain qualificat ion.
4.2.2 JANHC and JANKC devices. JANHC and JAN KC devices shall be qualified in accordance with
MIL-PRF-19500.
4.2.3 Construction verification. Cross s ec tional photos from three device s shall be submitted in the qualific ation
report.
MIL-PRF-19500/435N
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* 4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with appendix E,
table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance
with table I herein. D ev i ces that excee d the limits of t able I herein shall not be acceptable.
Screen
table E-IV of
MIL-PRF-19500
Measurement
JANS level
JANTXV and JA N TX level
(1) 3c
Required (see 4.3.2)
Required (see 4.3.2)
4
Not applicable
Not applicable
9
Required on Nom VZ > 10 V, IR1 and VZ
Not applicable
10
Required on Nom VZ > 10 V
Not applicable
11
∆I
R1
≤ 100 percent of i nitial reading or
10 nA whichever is greater. ∆VZ ≤ 2
percent of initial reading.
IR1 and V
Z
12
See 4.3.3, t = 240 hours.
See 4.3.3, t = 48 hours
(2) 13
Subgroups 2 and 3 of table I herein; ∆I
R1
≤
100 percent of initial reading or 10 nA
whichever is greater; ∆VZ ≤ 2 percent of
initial reading.
Subgroup 2 of table I herein; ∆I
R1
≤ 100
percent of initial reading or 10 nA whichever
is greater; ∆VZ ≤ 2 percent of initial rea ding.
(1) Shall be performed anytime after temperature cycling, screen 3 a; TX and TXV levels do not need to be repeated
in screening r equirements.
(2) PDA = 5 percent for screen 13, applies to ∆IR1, ∆VZ, IR1 and VZ (JANS only).
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accor dance with appendix
G of MIL-PRF-19500.
4.3.1.1 JAN produc t. JAN product will have temper ature cycling and thermal impe dance testing performed in
accordance with MIL-PRF-19500, JANT X level screening r equirements.
* 4.3.2 Therm al i mpedance. The therm al impedance measurements shall be performe d i n accordance with method
3101 or 4081 as applicable of MIL-STD-750 using the guidelines in that method for determi ning IM, IH, tH, tMD (and
VC where appropriat e). See table II, subgroup 4 herein.
4.3.3 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.4 herein): IZ(min) =
IZ(PCB). TA = 75°C maximum. Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition
B. Adjust IZ or TA to achieve the required TJ. TJ = 125°C minimum. W ith approval of t he qualifying activity and
preparing act i v ity, alternat e burn-in criteria (hours, bias co nditions, TJ, mounting conditions) may be use d for JANTX
and JANTXV quality levels. A justification de m onstrating equiv alence is required. In addition, the manufacturi ng
site’s burn-in data and performance history will be essential c riteria for burn-in m odification approval.
MIL-PRF-19500/435N
12
4.4 Conformance i nspection. C onformance inspec tion shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in ac cordance with a ppendix E, table E-V of
MIL-PRF-19500. End-point electric al measurements shall be in accor dance with tabl e I, subgroup 2 herein.
* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditi ons specified for
subgroup testing in appendi x E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500
and herein.
4.4.2.1 Group B inspection, appendix E, tabl e E-VIA (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B3 2101 Decap analysis scribe and break only.
B4 1037 2,000 c ycles
B5 1027 IZM = column 10 of table III minimum for 1,000 hours; adjus t IZ or TA to achieve
TJ = +175°C minimum. Marking legibility requirements shall not apply.
B6 3101 or RθJEC = 100°C/W (max) at z ero lead length (DO-213AA), +25°C ≤ TR ≤ +35°C
4081 (see 4.5.4). RθJL = 250°C/W (max) at L = .37 5 inch (9.53 mm), ( D O-35). RθJL and
RθJEC only.
4.4.2.2 Group B inspection, appendix E, tabl e E-VIB (JAN, JANTX, JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
B2 1056 0°C to +100°C, 10 cycles.
B2 1051 -55°C to +175°C, 25 cycles.
B3 1027 IZM = column 10 of table III herein mini mum. Adjust IZ or TA to ensure a
TJ = +150°C (min).
B4 2101 Decap analysis scribe and break only.
B5 Not applicable.
B6 1032 TA = +175°C.
MIL-PRF-19500/435N
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* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditi ons specified for
subgroup testing in appendi x E, table E-VII of MIL-PRF-19500 and as f ollows.
Subgroup Method Condition
C2 1056 0°C to +100°C, 10 cycles.
* C2 2036 Tension: condition A; 10 pounds; t = 15 seconds (not appl i cable to "UR", “UB” and
“UB2” suffix devices). Lead fatigue: Condition E, (not applicable to "UR", “UB” and
“UB2” suffix devices
C2 1071 Test condition E.
C3 Not applicable.
C5 4081 See 4.3.2, RθJL and RθJEC only.
C6 1027 IZM = column 10 of table III minimum. Adjust IZ or TA to ensure a TJ = +150°C
(min).
C8 4071 IZ = 250 µA dc, TA = +25°C ± 5°C, T2 = +125°C, αVZ = column 8 of table II I,
sampling plan = 22 devices, c = 0.
4.4.4 Group E inspection. Group E inspection shall be conducted in ac cordance with the conditions s pecified for
subgroup testing in appendi x E, table E-IX of MIL-PRF-19500 and in table II herein. E l ec trical measurements (end-
points) requirements shal l be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appro priate tables and as follows:
4.5.1 Surge current (IZSM). The peak cur rents shown in column 5 of tabl e III shall be applied in the rever se
direction and these shall be s uperimposed on t he current (IZ = 250 µA dc) a tot al of five surges at 1 minute intervals.
Each individual surge shall be one-half square-wave-pulse of 1/ 120 second duratio n or an equivalent one-half
sinewave with the same effective rms current.
4.5.2 Regulator voltage meas urements. The test current shal l be applied unti l thermal equilibrium is attained (20
±2 seconds maximum) prior to reading the breakdown voltage. For this test, t he diode shall be suspended by its
leads with mou nting clips who s e i ns ide edge is located at .375 inch (9. 53 mm) from the body and the mounting clips
shall be maint ained at a temperature of +25°C +8°C, -2°C. This measurement m ay be performed aft er a shorter time
following application of the t est current than that which provi des thermal equilibrium if corr elation to stabilized
readings can be established t o the satisfaction of the qualifying activit y. The breakdown voltage on JANHC and
JANKC shall b e read with a pulse measurement of 10 m s (max).
4.5.3 Temper ature coefficient of regulator voltage (αVZ). The device s hall be temperature stabilized with current
applied prior to reading regulator voltage at the specified ambient temperature as specified in table I herein,
subgroup 7.
4.5.4 Free air burn-in and life tes ts. The use of a current limiting or bal last resistor is permitt ed pr ovided that each
DUT still sees the full Pt (mi nimum) and that the minimum applied voltage, wh ere applicabl e, is maintained through-
out the burn-in peri od. Use met hod 3100 of MIL-STD-750 to m easure TJ.
MIL-PRF-19500/435N
14
4.5.5 Noise density. Noise density shall be measured using a noise density test circuit as shown on figure 6.
Place a lo w-noi se resistor, equi v alent in value t o the dynamic impedance of the diod e under test, in the test clips and
adjust test c urrent (IZT) and measure output-noise voltage. Remove resis tor, insert diode under test in test clips,
readjust test current to 250 µA dc and measure output-noise voltage again. To obtain noise density (ND), subtract
rms resistor output-noise voltage from rms diode output-noise voltage and divide by product of overall system gain
and square root of bandwidth. A ll m easurements shall be made at +25°C.
4.5.6 Decap in ternal visual scribe and break. Scratch glass at cavity area with diamond scribe. Carefully sn ap
open. Using 30X magnification examine the area where die (or bonding material) are in contact with the plugs, verify
metallurgical bonding area. If the verificat i on of the metallurgical bondi ng area is in question with test method 3101 of
MIL-STD-750, and test c ondition and limits herein, (ZθJX) shall be used to determine suitability for use.
MIL-PRF-19500/435N
15
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits 2/
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and
mechanical
examination
2071
Subgroup 2
Forward volt age
4011
Condition A, I
F
= 200 mA dc
V
F
1.1
V dc
Reverse current
leakage
4016
DC method; VR = column 6
of table III
I
R1
Column 7
µA dc
Regulator vol tage
4022
I
Z
= 250 µA dc (see 4.5.2)
V
Z
Column 2
-VZ tol
Column 2
+VZ tol
V dc
Thermal impedance
3101
See 4.3.2
Z
θJX
°C/W
Subgroup 3
High-temperature
operation
TA = +150°C
Reverse current
4016
DC method; VR = column 6
of table III
I
R2
Column 3
µA dc
Subgroup 4
Small-signal reverse
breakdown
impedance
4051
I
Z
= 250 µA dc;
ISIG = 25 µA ac rms
Z
ZT
Column 4
Ohms
Noise density
I
Z
= 250 µA dc (see 4.5.5)
ND
Column 9
µV/√ Hz
Subgroup 5
Not applicable
Subgroup 6
Surge current
4066
See 4.5.1
Electrical
measurements
Table I, subgroup 2
Subgroup 7
JANS only
Temperature
coefficient of
regulator volt age
4071
I
Z
= 250 µA dc; T
1
= +25°C,
±5°C; T2 = T1 +100°C (see
4.5.3)
αV
Z
Column 8
%/°C
1/ For sampling plan, see MIL-PRF-19500.
2/ Column references are to t able III herein.
*
MIL-PRF-19500/435N
16
* TABLE II. Group E inspection (all quality levels) – for qualific ation and requalif i c ation onl y.
Inspection 1/
MIL-STD-750
Qualificati on conformance
inspection (sampling plan)
Method
Conditions
Subgroup 1
45 devices, c = 0
Temperature cycling
1051
500 cycles.
Electrical measurements
See table I, subgroup 2.
Subgroup 2
Intermittent life
1037
6,000 cycles. I
Z
= column 10 of t abl e III.
Electrical measurements
See table I, subgroup 2.
Subgroup 4
Thermal resistance
3101
or
4081
RθJSP(IS) can be calculated but shal l be
measured once in the same package with a
similar die size to confirm calculations (may
apply to multiple specificat ion sheets)
RθJSP(AM) need be calculated only
15 devices,
c = 0
Thermal impedance curves
See MIL-PRF-19500
N/A
Subgroups 5 a nd 6
Not applicable
Subgroup 9
n = 45
Resistance t o glass
cracking
1057
Condition B. C ool down after solder
immersion is permitted. Test until failure
occurs on all d ev i c es or to a maximum of 25
cycles, whichever comes first. Not
applicable for UB and UB2 devices.
1/ A separate sam ple may be pulled f or each test.
*
MIL-PRF-19500/435N
17
TABLE III. Test ratings, primary electrical characteristics. 1/
Col 1
Col 2
Col 3
Col 4
Col 5
Col 6
Col 7
Col 8
Col 9
Col 10
2/
VZ
nom
IR
at
+150°C
ZZT
max
IZSM
(surge)
IZSM
(surge)
UB
VR
IR
αVZ
T1 = +25°C
T2 = +125°C
ND
IZPCB
Volts
µA dc
ohms
mA
mA
Volts
µA dc
%/°C
___
µV/ √ Hz
mA
1N4614-1
1N4615-1
1N4616-1
1N4617-1
1N4618-1
1.8
2.0
2.2
2.4
2.7
10.0
8.0
6.0
4.0
2.0
1,200
1,250
1,300
1,400
1,500
1,600
1,500
1,350
1,250
1,100
500
469
422
390
343
1.0
1.0
1.0
1.0
1.0
3.5
2.5
2.0
1.0
0.5
-0.075
-0.075
-0.075
-0.075
-0.075
1
1
1
1
1
120
110
100
95
90
1N4619-1
1N4620-1
1N4621-1
1N4622-1
1N4623-1
3.0
3.3
3.6
3.9
4.3
1.0
7.0
10.0
5.0
4.0
1,600
1,650
1,700
1,650
1,600
1,025
950
875
825
800
320
297
273
258
250
1.0
1.5
2.0
2.0
2.0
0.4
3.5
3.5
2.5
2.0
-0.075
-0.075
-0.065
-0.060
-0.050
1
1
1
1
1
87
85
83
80
77
1N4624-1
1N4625-1
1N4626-1
1N4627-1
1N4099-1
4.7
5.1
5.6
6.2
6.8
10.0
10.0
10.0
10.0
5.0
1,550
1,500
1,400
1,200
200
750
725
700
650
650
234
227
219
203
203
3.0
3.0
4.0
5.0
5.2
5.0
5.0
5.0
5.0
1.0
+.020,-.050
+.030,-.045
+.040,-.020
+.050,-.010
+.060
1
2
4
5
40
75
70
65
61
56
1N4100-1
1N4101-1
1N4102-1
1N4103-1
1N4104-1
7.5
8.2
8.7
9.1
10.0
5.0
5.0
5.0
5.0
5.0
200
200
200
200
200
650
650
650
650
650
203
203
203
203
203
5.7
6.3
6.7
7.0
7.6
1.0
0.5
0.5
0.5
0.5
+.065
+.070
+.075
+.080
+.080
40
40
40
40
40
51
46
44
42
38
1N4105-1
1N4106-1
1N4107-1
1N4108-1
1N4109-1
11.0
12.0
13.0
14.0
15.0
5.0
5.0
5.0
5.0
5.0
200
200
200
200
100
590
540
500
464
433
184
169
156
145
135
8.5
9.2
9.9
10.7
11.4
0.05
0.05
0.05
0.05
0.05
+.080
+.080
+.080
+.085
+.085
40
40
40
40
40
35
32
29
27
25
See footnotes at end of table.
MIL-PRF-19500/435N
18
TABLE III. Test ratings, primary electrical characteristics - Continued. 1/
Col 1
Col 2
Col 3
Col 4
Col 5
Col 6
Col 7
Col 8
Col 9
Col 10
2/
VZ
nom
IR
at
+150°C
ZZT
max
IZSM
(surge)
IZSM
(surge)
UB
VR
IR
αVZ
T1 = +25°C
T
2
= +125°C
ND
IZPCB
Volts
µA dc
ohms
mA
mA
Volts
µA dc
%/°C
___
µV/ √ Hz
mA
1N4110-1
1N4111-1
1N4112-1
1N4113-1
1N4114-1
16.0
17.0
18.0
19.0
20.0
5.0
5.0
5.0
2.5
2.5
100
100
100
150
150
406
382
361
342
325
127
119
113
107
102
12.2
13.0
13.7
14.5
15.2
0.05
0.05
0.05
0.05
0.01
+.085
+.090
+.090
+.090
+.090
40
40
40
40
40
24
22
21
20
19
1N4115-1
1N4116-1
1N4117-1
1N4118-1
1N4119-1
22.0
24.0
25.0
27.0
28.0
2.5
2.5
2.5
2.5
2.5
150
150
150
150
200
295
271
260
240
232
92
85
81
75
73
16.8
18.3
19.0
20.5
21.3
0.01
0.01
0.01
0.01
0.01
+.090
+.090
+.090
+.090
+.095
40
40
40
40
40
17
16
15
14
14
1N4120-1
1N4121-1
1N4122-1
1N4123-1
1N4124-1
30.0
33.0
36.0
39.0
43.0
2.5
2.5
2.5
2.5
2.5
200
200
200
200
250
216
197
180
166
151
68
66
56
52
47
22.8
25.1
27.4
29.7
32.7
0.01
0.01
0.01
0.01
0.01
+.095
+.095
+.095
+.095
+.095
40
40
40
40
40
13
12
11
9.8
8.9
1N4125-1
1N4126-1
1N4127-1
1N4128-1
1N4129-1
47.0
51.0
56.0
60.0
62.0
4.0
5.0
5.0
5.0
5.0
250
300
300
400
500
138
127
116
108
105
43
40
36
34
33
35.8
38.8
42.6
45.6
47.1
0.01
0.01
0.01
0.01
0.01
+.095
+.100
+.100
+.100
+.100
40
40
40
40
40
8.1
7.5
6.7
6.4
6.1
1N4130-1
1N4131-1
1N4132-1
1N4133-1
1N4134-1
68.0
75.0
82.0
87.0
91.0
7.0
7.0
8.0
8.0
10.0
700
700
800
1,000
1,200
95
86
79
75
71
30
27
25
23
22
51.7
57.0
62.4
66.2
69.2
0.01
0.01
0.01
0.01
0.01
+.100
+.100
+.100
+.100
+.100
40
40
40
40
40
5.6
5.1
4.6
4.4
4.2
1N4135-1
100.0
10.0
1,600
65
20
76.0
0.01
+.100
40
3.8
1/ Unless otherwise specified TC = 25°C.
2/ Applies to all voltage tolerance devices. (Examples: 1N4099-1 is ±5 percent; 1N4099C-1 is ±2 percent; and
1N4099D-1 is ±1 percent tolerance).
MIL-PRF-19500/435N
19
NOTES:
1. Input voltage and lead resis tance should be high s o that zener can be driven from a constant current source.
2. Input impedanc e of band pass filter should be high c ompared with the dynamic impedance of the diode under
test.
3. Filter bandwi dth characteristics shall be as follows:
a. fo = 2,000 Hz.
b. Shape factor, -40 db to -3 dB, approx imately 2.
c. Passband at the -3 dB is 1,000 Hz ≤50 Hz to 3,000 Hz ≤150 Hz.
d. Passband a t the -40 dB is 500 Hz ≤50 Hz t o 6,000 Hz ≤600 Hz.
FIGURE 6. Circuit for determination of noise densit y.
MIL-PRF-19500/435N
20
NOTES:
1. All devices ar e capable of operating at ≤ TJ specified on this curve. Any par allel line to t his curve will int ersect
the appropriate power for the des i red maximum TJ allowed.
2. Derate design c ur ve constrained by the maximum ju nction temperature (TJ ≤ 175°C) and power rating specified.
(See 1.3 herein.)
3. Derate design c ur ve chosen at TJ ≤ 150°C, where the maxim um temperature of electrical test is performed.
4. Derate design c ur ves chosen at TJ ≤ 125°C, and 110°C to s how power rating where most user s want to limit TJ
in their applic ation.
FIGURE 7. Temperature-power derating curve (DO-35).
MIL-PRF-19500/435N
21
NOTES:
1. All devices ar e capable of operating at ≤ TJ specified on this curve. Any par allel line to t his curve will int ersect
the appropriate power for the des i red maximum TJ allowed.
2. Derate design c ur ve constrained by the maximum ju nction temperature (TJ ≤ 175°C) and power rating specified.
(See 1.3 herein.)
3. Derate design c ur ve chosen at TJ ≤ 150°C, where the maxim um temperature of electrical test is performed.
4. Derate design c ur ves chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ
in their applic ation.
FIGURE 8. Temperature-power derating curve (DO-213AA).
MIL-PRF-19500/435N
22
Thermal Resistance Junction to PCB = 300°C/W
NOTES:
1. All devices ar e capable of operating at ≤ TJ specified on this curve. Any par allel line to t his curve will int ersect
the appropriate power for the des i red maximum TJ allowed.
2. Derate design c ur ve constrained by the maximum ju nction temperature (TJ ≤ 175°C) and power rating specified.
(See 1.3 herein.)
3. Derate design c ur ve chosen at TJ ≤ 150°C, where the maxim um temperature of electrical test is performed.
4. Derate design c ur ves chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ
in their applic ation.
FIGURE 9. Temperature-power derating curve (PCB).
MIL-PRF-19500/435N
23
Thermal impedance DO-35 PCB mount, FR4, 1oz Cu, 2.0 x 3.4 inches (50 x 87 mm) pad (MELF) and 3.6 inches
(92 mm) diamet er (axial with .125 inch (3.18 mm) lead length) at TA = 25°C.
NOTE: Thermal resistance = 300°C/W. Maximum power rating = 400 mW at TA = 55°C.
FIGURE 10. Thermal impedance DO-35 PCB mount.
Thermal Impedance
1
10
100
1000
0.0001 0.001 0.01 0.1 110 100 1000
Time (s)
Theta (C/W)
MIL-PRF-19500/435N
24
Thermal impedance DO-35 axial, TL = 25°C at .375 i nch (9.525 mm) f rom body.
NOTE: Thermal resistance = 250°C/W. Maximum power rating = 500 mW at TJ = 50°C.
FIGURE 11. Thermal impedance DO-35 axial.
Thermal Impedance
1
10
100
1000
0.0001 0.001 0.01 0.1 110 100
Time (s)
Theta (C/W)
MIL-PRF-19500/435N
25
Thermal impedance DO-213A MELF, TEC = 25°C.
NOTE: Thermal resistance = 100°C/W. Maximum power rat i ng = 500 mW at TEC = 125°C.
FIGURE 12. Thermal impedance DO-213A MELF.
Thermal Impedance
1
10
100
1000
0.0001 0.001 0.01 0.1 110
Time (s)
Theta (C/W)
MIL-PRF-19500/435N
26
Thermal impedance UB, TSP(IS) = 25°C.
NOTE: Thermal resistance = 90°C/W. Maximum power rating = 500 mW at TSP(IS) = 125°C.
FIGURE 13. Thermal impedance UB.
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 110 100
Theta In oC/W
Time In Seconds
Slash Sheet / 435 UB package
RθJSP(IS)
MIL-PRF-19500/435N
27
Thermal impedance UB, TA(PCB) = 25°C.
NOTE: Thermal resistance = 250°C/W. Maximum power rating = 400 mW at TA(PCB) = 125°C.
FIGURE 14. Thermal impedance UB.
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 110 100 1000
Theta In oC/W
Time In Seconds
Slash Sheet /435 UB Package
RθJA(PCB)
MIL-PRF-19500/435N
28
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requi rements shall be as specified i n the contract or order
(see 6.2). W hen pac kaging of materiel is to be performed by DoD or in-house c ontractor personnel, these personnel
need to contac t the responsibl e pac kaging activ i ty to ascertain packaging requir ements. Packaging r equirements are
maintained by the Inventor y Cont rol Point's packaging activities within the Mil itary Service or Defense Agency, or
within the Military Service’s system comma nds. Packaging data retrieval is available fr om the managing Military
Department's or Defense Age ncy's automate d pac kaging files, CD-ROM products, or by contacting the responsible
packaging act ivity.
6. NOTES
(This section contains inform ation of a general or explanatory natur e that may be helpful, but is not mandatory. T he
notes specified in MIL-PRF-19500 are applicable to this specific ation.)
6.1 Intended u se. Semiconductor s conforming to t his specification are intend ed for origi nal equipment design
applications and logistic s upport of existing equipment.
6.2 Acquisiti on requirements . Acquisition d ocuments should specify the fo l lowing:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
* d. The complete PIN, see 1.5 and 6.6.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of awar d of contract, qual ified for inclus i on in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by t hat date. The att ention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to of fer to the Federal
Government tested for qualifi cation in order that they may b e eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATT N: /VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online
listing of products qualified to this specification may be found in the Qualified Products Database (QPD ) at
https://assist.dla.mil.
6.4 Substituti on information.
6.4.1 Substitutability of 2 percent and 1 percent tolerance d ev i c es. Devices of tighter tolerance are a direc t one
way substitute for the looser tolerance devices (example: JA N TX1N4614D-1 substitutes for JANTX1N4614-1).
MIL-PRF-19500/435N
29
6.4.2 Substitutabilit y of das h-one parts. Non-dash-one devices have been deleted from this specification. Dash-
one devices are a direct subst i tute for non das h-one devices and are preferred. The following table shows the direct
substitutability.
Superseded
part number
Superseding
part number
Superseded
part number
Superseding
part number
Superseded
part number
Superseding
part number
1N4614
1N4614-1
1N4102
1N4102-1
1N4119
1N4119-1
1N4615
1N4615-1
1N4103
1N4103-1
1N4120
1N4120-1
1N4616
1N4616-1
1N4104
1N4104-1
1N4121
1N4121-1
1N4617
1N4617-1
1N4105
1N4105-1
1N4122
1N4122-1
1N4618
1N4618-1
1N4106
1N4106-1
1N4123
1N4123-1
1N4619
1N4619-1
1N4107
1N4107-1
1N4124
1N4124-1
1N4620
1N4620-1
1N4108
1N4108-1
1N4125
1N4125-1
1N4621
1N4621-1
1N4109
1N4109-1
1N4126
1N4126-1
1N4622
1N4622-1
1N4110
1N4110-1
1N4127
1N4127-1
1N4623
1N4623-1
1N4111
1N4111-1
1N4128
1N4128-1
1N4624
1N4624-1
1N4112
1N4112-1
1N4129
1N4129-1
1N4625
1N4625-1
1N4113
1N4113-1
1N4130
1N4130-1
1N4626
1N4626-1
1N4114
1N4114-1
1N4131
1N4131-1
1N4627
1N4627-1
1N4115
1N4115-1
1N4132
1N4132-1
1N4099
1N4099-1
1N4116
1N4116-1
1N4133
1N4133-1
1N4100
1N4100-1
1N4117
1N4117-1
1N4134
1N4134-1
1N4101
1N4101-1
1N4118
1N4118-1
1N4135
1N4135-1
* 6.5 PIN construc tion example .
* 6.5.1 Encapsulated devices The PINs for encaps ul ated devices are constructed using the follo win g form.
JANTXV 1N 4099 C UBCC
JAN certific ation mark and qu al ity level (see 1.5.1)
First number and first letter symbols (see 1.5.3.1)
Second numbe r symbols (see 1.5.3.2)
First suffix symbol (see 1.5.3.3)
Second suffix symbol (see 1.5.3.4)
* 6.5.2 Unencaps ulated devices. The PINs for un-encapsulated devices are constr uc ted using the following form.
JANHC A 1N 4099 D
JAN certific ation mark and qu al ity level (see 1.5.2)
Die identifi er for unencapsulated devices (see 1.5.5)
First number and first letter symbols (see 1.5.3.1)
Second numbe r symbols (see 1.5.3.2)
First suffix symbol (see 1.5.3.3)
MIL-PRF-19500/435N
30
* 6.6 List of PINs.
* 6.6.1 List of PINs for encapsu l ated devices. The follo wing is a list of possi bl e P INs for encapsulated devices
available on this specificat ion sheet.
PINs for devices of the base
quality level PINs for devices of the "TX"
quality level PINs for devices of the
"TXV" quality level PINs for devices of the "S"
quality level
JAN1N4099#$
JAN1N4100#$
JAN1N4101#$
JAN1N4102#$
JAN1N4103#$
JANTX1N4099#$
JANTX1N4100#$
JANTX1N4101#$
JANTX1N4102#$
JANTX1N4103#$
JANTXV1N4099#$
JANTXV1N4100#$
JANTXV1N4101#$
JANTXV1N4102#$
JANTXV1N4103#$
JANS1N4099#$
JANS1N4100#$
JANS1N4101#$
JANS1N4102#$
JANS1N4103#$
JAN1N4104#$
JAN1N4105#$
JAN1N4106#$
JAN1N4107#$
JAN1N4108#$
JANTX1N4104#$
JANTX1N4105#$
JANTX1N4106#$
JANTX1N4107#$
JANTX1N4108#$
JANTXV1N4104#$
JANTXV1N4105#$
JANTXV1N4106#$
JANTXV1N4107#$
JANTXV1N4108#$
JANS1N4104#$
JANS1N4105#$
JANS1N4106#$
JANS1N4107#$
JANS1N4108#$
JAN1N4109#$
JAN1N4110#$
JAN1N4111#$
JAN1N4112#$
JAN1N4113#$
JANTX1N4109#$
JANTX1N4110#$
JANTX1N4111#$
JANTX1N4112#$
JANTX1N4113#$
JANTXV1N4109#$
JANTXV1N4110#$
JANTXV1N4111#$
JANTXV1N4112#$
JANTXV1N4113#$
JANS1N4109#$
JANS1N4110#$
JANS1N4111#$
JANS1N4112#$
JANS1N4113#$
JAN1N4114#$
JAN1N4115#$
JAN1N4116#$
JAN1N4117#$
JAN1N4118#$
JANTX1N4114#$
JANTX1N4115#$
JANTX1N4116#$
JANTX1N4117#$
JANTX1N4118#$
JANTXV1N4114#$
JANTXV1N4115#$
JANTXV1N4116#$
JANTXV1N4117#$
JANTXV1N4118#$
JANS1N4114#$
JANS1N4115#$
JANS1N4116#$
JANS1N4117#$
JANS1N4118#$
JAN1N4119#$
JAN1N4120#$
JAN1N4121#$
JAN1N4122#$
JAN1N4123#$
JANTX1N4119#$
JANTX1N4120#$
JANTX1N4121#$
JANTX1N4122#$
JANTX1N4123#$
JANTXV1N4119#$
JANTXV1N4120#$
JANTXV1N4121#$
JANTXV1N4122#$
JANTXV1N4123#$
JANS1N4119#$
JANS1N4120#$
JANS1N4121#$
JANS1N4122#$
JANS1N4123#$
JAN1N4124#$
JAN1N4125#$
JAN1N4126#$
JAN1N4127#$
JAN1N4128#$
JANTX1N4124#$
JANTX1N4125#$
JANTX1N4126#$
JANTX1N4127#$
JANTX1N4128#$
JANTXV1N4124#$
JANTXV1N4125#$
JANTXV1N4126#$
JANTXV1N4127#$
JANTXV1N4128#$
JANS1N4124#$
JANS1N4125#$
JANS1N4126#$
JANS1N4127#$
JANS1N4128#$
JAN1N4129#$
JAN1N4130#$
JAN1N4131#$
JAN1N4132#$
JAN1N4133#$
JANTX1N4129#$
JANTX1N4130#$
JANTX1N4131#$
JANTX1N4132#$
JANTX1N4133#$
JANTXV1N4129#$
JANTXV1N4130#$
JANTXV1N4131#$
JANTXV1N4132#$
JANTXV1N4133#$
JANS1N4129#$
JANS1N4130#$
JANS1N4131#$
JANS1N4132#$
JANS1N4133#$
See footnotes at end of table.
MIL-PRF-19500/435N
31
* 6.6.1 List of PINs for encapsu l ated devices. Continued.
PINs for devices of the base
quality level PINs for devices of the "TX"
quality level PINs for devices of the
"TXV" quality level PINs for devices of the "S"
quality level
JAN1N4134#$
JAN1N4135#$
JAN1N4614#$
JAN1N4615#$
JAN1N4616#$
JANTX1N4134#$
JANTX1N4135#$
JANTX1N4614#$
JANTX1N4615#$
JANTX1N4616#$
JANTXV1N4134#$
JANTXV1N4135#$
JANTXV1N4614#$
JANTXV1N4615#$
JANTXV1N4616#$
JANS1N4134#$
JANS1N4135#$
JANS1N4614#$
JANS1N4615#$
JANS1N4616#$
JAN1N4617#$
JAN1N4618#$
JAN1N4619#$
JAN1N4620#$
JAN1N4621#$
JANTX1N4617#$
JANTX1N4618#$
JANTX1N4619#$
JANTX1N4620#$
JANTX1N4621#$
JANTXV1N4617#$
JANTXV1N4618#$
JANTXV1N4619#$
JANTXV1N4620#$
JANTXV1N4621#$
JANS1N4617#$
JANS1N4618#$
JANS1N4619#$
JANS1N4620#$
JANS1N4621#$
JAN1N4622#$
JAN1N4623#$
JAN1N4624#$
JAN1N4625#$
JAN1N4626#$
JAN1N4627#$
JANTX1N4622#$
JANTX1N4623#$
JANTX1N4624#$
JANTX1N4625#$
JANTX1N4626#$
JANTX1N4627#$
JANTXV1N4622#$
JANTXV1N4623#$
JANTXV1N4624#$
JANTXV1N4625#$
JANTXV1N4626#$
JANTXV1N4627#$
JANS1N4622#$
JANS1N4623#$
JANS1N4624#$
JANS1N4625#$
JANS1N4626#$
JANS1N4627#$
(1) The pound sign (#) represents the first suffix symbol (see 1.5.3.3). The dollar si gn ($) represents the
second suffix symbol, see 1.5.3.2.
MIL-PRF-19500/435N
32
* 6.6.2 List of P INs for unencapsulated devices. The following is a list of poss ibl e P INs availabl e on this
specificati on sheet. The qualified die suppliers with the applicable letter version (e.g., JANHCA1N4614) will be
identified on the QML.
JANC ordering information
PIN (1)
Manufacturer CAGE
43611 (2)
12954 (2)
52GC4 (2)
1N4614-1
1N4615-1
1N4616-1
1N4617-1
1N4618-1
JANHCA1N4614
JANHCA1N4615
JANHCA1N4616
JANHCA1N4617
JANHCA1N4618
JANHCB1N4614
JANHCB1N4615
JANHCB1N4616
JANHCB1N4617
JANHCB1N4618
JANHCC1N4614
JANHCC1N4615
JANHCC1N4616
JANHCC1N4617
JANHCC1N4618
1N4619-1
1N4620-1
1N4621-1
1N4622-1
1N4623-1
JANHCA1N4619
JANHCA1N4620
JANHCA1N4621
JANHCA1N4622
JANHCA1N4623
JANHCB1N4619
JANHCB1N4620
JANHCB1N4621
JANHCB1N4622
JANHCB1N4623
JANHCC1N4619
JANHCC1N4620
JANHCC1N4621
JANHCC1N4622
JANHCC1N4623
1N4624-1
1N4625-1
1N4626-1
1N4627-1
1N4099-1
JANHCA1N4624
JANHCA1N4625
JANHCA1N4626
JANHCA1N4627
JANHCA1N4099
JANHCB1N4624
JANHCB1N4625
JANHCB1N4626
JANHCB1N4627
JANHCB1N4099
JANHCC1N4624
JANHCC1N4625
JANHCC1N4626
JANHCC1N4627
JANHCC1N4099
1N4100-1
1N4101-1
1N4102-1
1N4103-1
1N4104-1
JANHCA1N4100
JANHCA1N4101
JANHCA1N4102
JANHCA1N4103
JANHCA1N4104
JANHCB1N4100
JANHCB1N4101
JANHCB1N4102
JANHCB1N4103
JANHCB1N4104
JANHCC1N4100
JANHCC1N4101
JANHCC1N4102
JANHCC1N4103
JANHCC1N4104
1N4105-1
1N4106-1
1N4107-1
1N4108-1
1N4109-1
JANHCA1N4105
JANHCA1N4106
JANHCA1N4107
JANHCA1N4108
JANHCA1N4109
JANHCB1N4105
JANHCB1N4106
JANHCB1N4107
JANHCB1N4108
JANHCB1N4109
JANHCC1N4105
JANHCC1N4106
JANHCC1N4107
JANHCC1N4108
JANHCC1N4109
1N4110-1
1N4111-1
JANHCA1N4110
JANHCA1N4111
JANHCB1N4110
JANHCB1N4111
JANHCC1N4110
JANHCC1N4111
1N4112-1
1N4113-1
1N4114-1
1N4115-1
1N4116-1
JANHCA1N4112
JANHCA1N4113
JANHCA1N4114
JANHCA1N4115
JANHCA1N4116
JANHCB1N4112
JANHCB1N4113
JANHCB1N4114
JANHCB1N4115
JANHCB1N4116
JANHCC1N4112
JANHCC1N4113
JANHCC1N4114
JANHCC1N4115
JANHCC1N4116
1N4117-1
1N4118-1
1N4119-1
1N4120-1
1N4121-1
JANHCA1N4117
JANHCA1N4118
JANHCA1N4119
JANHCA1N4120
JANHCA1N4121
JANHCB1N4117
JANHCB1N4118
JANHCB1N4119
JANHCB1N4120
JANHCB1N4121
JANHCC1N4117
JANHCC1N4118
JANHCC1N4119
JANHCC1N4120
JANHCC1N4121
1N4122-1
1N4123-1
1N4124-1
1N4125-1
1N4126-1
JANHCA1N4122
JANHCA1N4123
JANHCA1N4124
JANHCA1N4125
JANHCA1N4126
JANHCB1N4122
JANHCB1N4123
JANHCB1N4124
JANHCB1N4125
JANHCB1N4126
JANHCC1N4122
JANHCC1N4123
JANHCC1N4124
JANHCC1N4125
JANHCC1N4126
1N4127-1
1N4128-1
1N4129-1
1N4130-1
1N4131-1
JANHCA1N4127
JANHCA1N4128
JANHCA1N4129
JANHCA1N4130
JANHCA1N4131
JANHCB1N4127
JANHCB1N4128
JANHCB1N4129
JANHCB1N4130
JANHCB1N4131
JANHCC1N4127
JANHCC1N4128
JANHCC1N4129
JANHCC1N4130
JANHCC1N4131
1N4132-1
1N4133-1
1N4134-1
1N4135-1
JANHCA1N4132
JANHCA1N4133
JANHCA1N4134
JANHCA1N4135
JANHCB1N4132
JANHCB1N4133
JANHCB1N4134
JANHCB1N4135
JANHCC1N4132
JANHCC1N4133
JANHCC1N4134
JANHCC1N4135
(1) C and D tolerance suffix are app li c able to JANC chips.
(2) For JANKC level, re place "JANHC" with "JANKC".
MIL-PRF-19500/435N
33
* 6.7 Request for new types and config urations. R eques ts for new device types or configurations for inclusions in
this specification sheet sh ould be submitted t o: DLA Land and Marit i me, ATTN: V AC, Post Office Box 3990,
Columbus, OH 43218–3990 or by electronic mail at Semiconductor@.dla.mil or by facsimile ( 614) 693-1642 or DSN
850-6939.
6.8 Changes fr om previous issue. The margins of this specificat i on are marked with asterisks to indicate where
changes from t he previous issue were made. This was done as a convenienc e only and the Government assumes
no liability whatsoever for any inaccuracies in these notati ons. Bidders and contractors are cautioned t o ev aluate the
requirements of this document based on the entir e c ontent irrespective of the mar ginal notations and relations hi p to
the previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2016-009)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 70, 99
NOTE: The activities listed above were interes ted in this docum ent as of the date of this document. Si nce
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Onli ne database at https://assist.dla.mil.
