BYS10-25 thru BYS10-45 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES * Low profile package * Ideal for automated placement * Guardring for overvoltage protection * Low power losses, high efficiency * Very low switching losses * High surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified DO-214AC (SMA) * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 25 V to 45 V IFSM 40 A VF 0.50 V TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER Device marking code Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current IF(AV) Peak forward surge current single half sine-wave superimposed on rated load Junction and storage temperature range Revision: 26-Mar-12 BYS10-35 BYS10-45 BYS 025 BYS 035 BYS 045 25 35 45 1.5 UNIT V A 40 8.3 ms 10 ms BYS10-25 IFSM TJ, TSTG A 30 - 65 to + 150 C Document Number: 86013 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYS10-25 thru BYS10-45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward voltage (1) SYMBOL BYS10-35 VF 1.0 A Maximum DC reverse current (1) BYS10-25 TJ = 25 C VRRM UNIT 500 IR TJ = 100 C BYS10-45 mV 500 A 10 mA Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient BYS10-25 BYS10-35 RJL 25 RJA (1) 150 RJA (2) 125 RJA (3) 100 BYS10-45 UNIT C/W C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYS10-45-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYS10-45-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYS10-45HE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel BYS10-45HE3/TR3 (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES 7 1000 BYS10-45 6 Reverse Current (mA) PR - Max. Reverse Power Dissipation (W) (TA = 25 C unless otherwise noted) 5 BYS10-35 4 RthJA = 25 K/W 3 BYS10-25 2 100 10 VR = VRRM 1 1 RthJA = 100 K/W 0.1 0 0 40 80 120 160 200 0 40 80 120 160 200 Junction Temperature (C) Junction Temperature (C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Reverse Current vs. Junction Temperature Revision: 26-Mar-12 Document Number: 86013 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYS10-25 thru BYS10-45 www.vishay.com Vishay General Semiconductor 2.0 100 TJ = 150 C Forward Current (A) Average Forward Current (A) VR = VRRM, Half Sine-Wave, RthJA = 25 K/W 1.6 1.2 BYS10-25 0.8 BYS10-35 10 1 TJ = 25 C 0.1 0.4 BYS10-45 0.01 0 0 40 80 120 160 0 200 0.4 0.8 1.2 1.6 2.0 Ambient Temperature (C) Forward Voltage (V) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Max. Forward Current vs. Forward Voltage 100 Transient Thermal Impedance (C/W) Average Forward Current (A) 2.0 VR = 0 V, Half Sine-Wave 1.6 1.2 100 K/W RthJA = 25 K/W 125 K/W 0.8 150 K/W 0.4 0 0 40 80 120 1 0.1 0.01 200 160 10 0.1 Ambient Temperature (C) 1 10 100 t - Heating Time (s) Fig. 4 - Max. Average Forward Current vs. Ambient Temperature Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 26-Mar-12 Document Number: 86013 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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