17/7/08
OPTION G
7.62
0.26
0.5
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
0.26
7.62
6.62
0.5
APPROVALS
zUL recognised, File No. E91231
Package System " GG "
'X' SPECIFICATION APPROVALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
zCertified to EN60950 by
Nemko - Certificate No. P01102464
DESCRIPTION
The H11AV series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
zHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
zHigh BVCEO (70V min)
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zDC motor controllers
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
34
6
25
10.46
9.86
0.6
0.1 1.25
0.75
DB92055
H11AV1X, H11AV2X, H11AV3X
H11AV1, H11AV2, H11AV3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse V oltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO 70V
Collector-base V oltage BVCBO 70V
Emitter-collector V oltage BVECO 6V
Collector Current 50mA
Power Dissipation 160mW
POWER DISSIPATION
T otal Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park V iew Road West,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
DB92055m-AAS/A3
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Current (IR)10μAV
R = 6V
Output Collector-emitter Breakdown (BVCEO)70 V I
C = 1mA
( note 2 )
Collector-base Breakdown (BVCBO)70 V I
C = 100μA
Emitter-collector Breakdown (BVECO) 6 V I
E = 100μA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR)
H11AV1 100 300 % 10mA IF , 10V VCE
H11AV2 50 % 10mA IF , 10V VCE
H11AV3 20 % 10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0. 4 V 20mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Rise Time, tr 2 μsV
CC = 5V , fig 1
Fall Time, tf 2 μsI
F= 10mA, RL = 75Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
17/7/08
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
Output
RL = 75Ω
Input
10%
90% 90%
10%
ton
tr
FIG 1
VCC
toff
tf
DB92055m-AAS/A3
17/7/08
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
70
80
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
IF = 5mA
10
15
20
30
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
-30 0 25 50 75 100
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 20mA
IC = 2mA
Ambient temperature TA ( °C )
