1. Product profile
1.1 General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 03 — 18 August 2009 Product data sheet
Table 1. Product overview
Type number Package
Name NXP
PESD5V0L6UAS TSSOP8 SOT505-1
PESD5V0L6US SO8 SOT96-1
nESD protection of up to six lines nUltra low leakage current: IRM = 8 nA
nLow diode capacitance nESD protection of up to 20 kV
nMax. peak pulse power: PPP = 35 W nIEC 61000-4-2, level 4 (ESD)
nLow clamping voltage: V(CL)R = 15 V nIEC 61000-4-5 (surge); IPP = 2.5 A
nComputers and peripherals nHigh speed data lines
nCommunication systems nParallel ports
nAudio and video equipment
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage - - 5 V
Cddiode capacitance VR = 0 V;
f=1MHz - 1619pF
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 2 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
2. Pinning information
3. Ordering information
4. Marking
Table 3. Discrete pinning
Pin Description Simplified outline Symbol
TSSOP8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 common anode
7 common anode
8 cathode 6
SO8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 common anode
7 common anode
8 cathode 6
14
85 8
7
6
5
1
2
3
4
sym004
4
5
1
88
7
6
5
1
2
3
4
sym004
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0L6UAS TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm SOT505-1
PESD5V0L6US SO8 plastic small outline package; 8 leads;
body width 3.9 mm SOT96-1
Table 5. Marking
Type number Marking code
PESD5V0L6UAS 5V06U
PESD5V0L6US 5V06US
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 3 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power 8/20 µs pulse [1][2] -35W
IPP peak pulse current 8/20 µs pulse [1][2] - 2.5 A
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
capability IEC 61000-4-2
(contact discharge) [1][2] -20kV
HBM MIL-STD883 - 10 kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2, level 4 (ESD); see Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 4 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa191
Ipp
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 to 1 ns
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 5 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
Table 9. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse stand-off voltage - - 5 V
IRM reverse leakage current VRWM = 5 V - 8 25 nA
V(CL)R clamping voltage IPP = 1 A [1][2] --10V
IPP = 2.5 A [1][2] --15V
V(BR) breakdown voltage IR = 1 mA 6.4 6.8 7.2 V
rdif differential resistance IR = 1 mA - - 100 Ω
Cddiode capacitance VR = 0 V; f = 1 MHz;
see Figure 5 - 1619pF
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 6 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential
pulse duration tp; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
Tamb = 25 °C; f = 1 MHz
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
001aaa192
tp (µs)
110
4
103
10 102
10
102
Ppp
(W)
1
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
VR (V)
054231
001aaa194
12
14
10
16
18
Cd
(pF)
8
001aaa195
1
10
10−1
Tj (°C)
−100 150100050−50
IRM
IRM(25˚C)
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 7 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Fig 7. ESD clamping test setup and waveforms
006aaa064
450 Ω
50 Ω
IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT: PESD5V0L6UAS
PESD5V0L6US
RG 223/U
50 Ω coax
RZ
CZ
ESD TESTER 4 GHz DIGITIZING
OSCILLOSCOPE
10×
ATTENUATOR
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 8 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
7. Application information
The PESD5V0L6UAS and the PESD5V0L6US are designed for protection of up to six
unidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and
surge pulses. The PESD5V0L6UAS and the PESD5V0L6US may be used on lines where
the signal polarity is above or below ground.
The PESD5V0L6UAS and the PESD5V0L6US provide a surge capability of 35 W per line
for a 8/20 µs waveform.
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The
following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
Fig 8. Typical application for ESD protection of data lines
n.c.
n.c.
006aaa065
PESD5V0L6UAS
PESD5V0L6US PESD5V0L6UAS
PESD5V0L6US
high speed
data lines
unidirectional protection of 6 lines bidirectional protection of 5 lines
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 9 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
8. Package outline
Fig 9. Package outline SOT505-1 (TSSOP8)
UNIT A1
A
max. A2A3bpLHELpwyv
ceD(1) E(2) Z(1) θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
0.05 0.95
0.80 0.45
0.25 0.28
0.15 3.1
2.9 3.1
2.9 0.65 5.1
4.7 0.70
0.35 6°
0°
0.1 0.10.10.94
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.7
0.4
SOT505-1 99-04-09
03-02-18
wM
bp
D
Z
e
0.25
14
85
θ
A
A2A1
Lp
(A3)
detail X
L
HE
E
c
vMA
X
A
y
2.5 5 mm0
scale
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1
1.1
pin 1 index
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 10 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Fig 10. Package outline SOT96-1 (SO8/MS-012)
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 5.0
4.8 4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.20
0.19 0.16
0.15 0.05 0.244
0.228 0.028
0.024 0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
99-12-27
03-02-18
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 11 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
1000 2500
PESD5V0L6UAS SOT505-1 8 mm pitch, 12 mm tape and reel - -118
PESD5V0L6US SOT96-1 8 mm pitch, 12 mm tape and reel -115 -118
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 12 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
10. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V06UAS_US_3 20090818 Product data sheet - PESD5V06UAS_US_2
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Table 3 “Discrete pinning”: amended
PESD5V06UAS_US_2 20041109 Product data sheet - PESD5V0L6US_1
PESD5V0L6US_1 20040315 Product specification - -
PESD5V0L6UAS_US_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 August 2009 13 of 14
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 August 2009
Document identifier: PESD5V0L6UAS_US_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Packing information. . . . . . . . . . . . . . . . . . . . . 11
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Contact information. . . . . . . . . . . . . . . . . . . . . 13
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
