© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 2 Publication Order Number:
BAT54M3/D
BAT54M3T5G
Schottky Barrier Diode
This Schottky barrier diode is designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
The BAT54M3T5G device is a spin−off of our popular SOT−23
three−leaded device and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
•Extremely Fast Switching Speed
•Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
•Reduces Board Space
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF200
2.0 mW
mW/°C
Forward Current (DC) IF200 Max mA
Non−Repetitive Peak Forward Current
tp < 10 msec IFSM 600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
IFRM 300 mA
Junction Temperature TJ−55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
30 V
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODE
3
CATHODE 1
ANODE
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Device Package Shipping†
ORDERING INFORMATION
BAT54M3T5G SOT−723
(Pb−Free) 8000/Tape & Ree
l
SOT−723
CASE 631AA
STYLE 2
MARKING
DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
AP = Specific Device Code
M = Date Code
AP M
1
3
2
1
NSVBAT54M3T5G SOT−723
(Pb−Free) 8000/Tape & Ree
l
BAT54M3T5G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT− 7.6 10 pF
Reverse Leakage (VR = 25 V) IR− 0.5 2.0 mA
Forward Voltage (IF = 0.1 mA
)
(IF = 1.0 mA
)
(IF = 10 mA
)
(IF = 30 mA
)
(IF = 100 mA
)
VF− 0.22 0.24 V
− 0.29 0.32
− 0.35 0.40
− 0.41 0.5
− 0.52 0.8
Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1) trr − − 5.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAT54M3T5G
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3
CT, TOATAL CAPACITANCE (pF)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820
Ω
0.1 μF
DUT
VR
100 μH0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpT
10%
90%
IF
IR
trr T
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measure
d
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 51015 20 25
14
0VR, REVERSE VOLTAGE (VOLTS)
12
4
2
051015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.6
−55°C
150°C
125°C100
1000
3
0
2520
6
8
10
IR, REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
BAT54M3T5G
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4
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
LE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 Y
2X
E
12
3
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BAT54M3/D
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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