V23990-P442-C data sheet
version 02/03
flow PIM® 0+E, 600V
Maximum Ratings / Höchstzulässige Werte
Parameter Condition Symbol Datasheet values Unit
max.
Input Rectifier Bridge
Gleichrichte
r
Repetitive peak reverse voltage VRRM 1600 V
Periodische Rückw. Spitzensperrspannung
Forward current per diode DC current Th=80°C; IFAV 30 A
Dauergrenzstrom Tc=80°C 40-limited by wires
Surge forward current tp=10ms Tj=25°C IFSM 200 A
Stoßstrom Grenzwert
I
2
t-value tp=10ms Tj=25°C I
2
t200
A
2
s
Grenzlastintegral
Power dissipation per Diode Tj=150°C Th=80°C Ptot 37 W
Verlustleistung pro Diode Tc=80°C 51,2
Transistor Inverter
Transistor Wechselrichte
r
Collector-emitter break down voltage VCE 600 V
Kollektor-Emitter-Sperrspannung
DC collector current Tj=150°C Th=80°C, IC9A
Kollektor-Dauergleichstrom Tc=80°C 12,1
Repetitive peak collector current tp=1ms Th=80°C Icpuls 18 A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT Tj=150°C Th=80°C Ptot 28 W
Verlustleistung pro IGBT Tc=80°C 43
Gate-emitter peak voltage VGE ±20 V
Gate-Emitter-Spitzenspannung
SC withstand time Tj≤150°C VGE=15V tSC 10 us
Kurzschlußverhalten VCE=VCEBR
Diode Inverte
r
Diode Wechselrichte
r
DC forward current Tj=150°C Th=80°C, IF14 A
Dauergleichstrom Tc=80°C 18,3
Repetitive peak forward current tp=1ms Th=80°C IFRM 27 A
Periodischer Spitzenstrom
Power dissipation per Diode Tj=150°C Th=80°C Ptot 21 W
Verlustleistung pro Diode Tc=80°C 32,3
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM® 0+E, 600V
Maximum Ratings / Höchstzulässige Werte
Parameter Condition Symbol Datasheet values Unit
max.
Thermal properties
Thermische Eigenschaften
max. Chip temperature T
j
max 150 °C
max. Chiptemperatur
Storage temperature Tst
g
-40…+125 °C
Lagertemperatur
Operation temperature To
-40…+125 °C
Betriebstemperatur
Insulation properties
Modulisolation
Insulation voltage t=1min Vis 4000 Vdc
Isolationsspannung
Creepage distance min 12,7 mm
Kriechstrecke
Clearance min 12,7 mm
Luftstrecke
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM® 0+E, 600V
Characteristic values
Description Symbol Conditions Datasheet values Unit
T(C°) Other conditions VGE(V)
VR(V)
VCE(V)
IC(A)
IF(A)
(Rgon-Rgoff) VGS(V) VDS(V) Id(A) Min Typ Max
Input Rectifier Bridge
Gleichrichte
r
Forward voltage VFTj=25°C 30 1,23 1,4 V
Durchlaßpannung Tj=125°C 1,22
Threshold voltage (for power loss calc. only) Vto Tj=25°C 30 0,92 V
Schleusenspannung Tj=125°C 0,81
Slope resistance (for power loss calc. only) rtTj=25°C 0,01 Ohm
Ersatzwiderstand Tj=125°C 30 0,014
Reverse current IrTj=25°C 1200 0,01 mA
Sperrstrom Tj=150°C 3
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip RthJH
Thermal grease
thickness≤50um 1,9 K/W
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip RthJC
Warmeleitpaste
Dicke≤50um
λ = 0,61 W/mK 1,3 K/W
Transistor Inverter
Transistor Wechselrichte
r
Gate emitter threshold voltage VGE(th) Tj=25°C VCE=VGE 0,0002 3 4 5 V
Gate-Schwellenspannung Tj=125°C
Collector-emitter saturation voltage VCE(sat) Tj=25°C 15 7 2,16 2,85 V
Kollektor-Emitter Sättigungsspannung Tj=125°C 2,55
Collector-emitter cut-off current incl. Diode ICES Tj=25°C 0 600 0,06 mA
Kollektor-Emitter Reststrom Tj=125°C 0,7
Gate-emitter leakage current IGES Tj=25°C 25 0 200 nA
Gate-Emitter Reststrom Tj=125°C
Integrated Gate resistor Rgint - Ohm
Integrirter Gate Widerstand
Turn-on delay time td(on) Tj=25°C Rgon=80Ohm 15 300 7 ns
Einschaltverzögerungszeit Tj=125°C Rgof=40Ohm 15
Rise time trTj=25°C Rgon=80Ohm 15 300 7 ns
Anstiegszeit Tj=125°C Rgof=40Ohm 18
Turn-off delay time td(off) Tj=25°C Rgon=80Ohm 15 300 7 ns
Abschaltverzögerungszeit Tj=125°C Rgof=40Ohm 200
Fall time tfTj=25°C Rgon=80Ohm 15 300 7 ns
Fallzeit Tj=125°C Rgof=40Ohm 25
Turn-on energy loss per pulse Eon Tj=25°C Rgon=80Ohm 15 300 7 mWs
Einschaltverlustenergie pro Puls Tj=125°C Rgof=40Ohm 0,159
Turn-off energy loss per pulse Eoff Tj=25°C Rgon=80Ohm 15 300 7 mWs
Abschaltverlustenergie pro Puls Tj=125°C Rgof=40Ohm 0,136
Input capacitance Cies Tj=25°C f=1MHz 0 25 0,35 0,42 nF
Eingangskapazität Tj=125°C
Output capacitance Coss Tj=25°C f=1MHz 0 25 0,038 0,046 nF
Ausgangskapazität Tj=125°C
Reverse transfer capacitance Crss Tj=25°C f=1MHz 0 25 0,023 0,028 nF
Rückwirkungskapazität Tj=125°C
Gate charge QGate Tj=25°C 15 480 6 32 42 nC
Gate Ladung Tj=125°C
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip RthJH
Thermal grease
thickness≤50um 2,5 K/W
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip RthJC
W
arme
l
e
it
pas
t
e
Dicke≤50um
λ = 0,61 W/mK 1,7 K/W
Coupled thermal resistance inverter
diode-transistor RthJH
Thermal grease
thickness≤50um 0,7 K/W
Gekoppelte Wärmewiderstand Wechselrichter
Diode-Transistor
Warmeleitpaste
Dicke≤50um
λ = 0,61 W/mK
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM® 0+E, 600V
Characteristic values
Description Symbol Conditions Datasheet values Unit
T(C°) Other conditions VGE(V)
VR(V)
VCE(V)
IC(A)
IF(A)
(Rgon-Rgoff) VGS(V) VDS(V) Id(A) Min Typ Max
Diode Inverter
Diode Wechselrichte
r
Diode forward voltage VFTj=25°C 7 1,53 2,2 V
Durchlaßspannung Tj=125°C 1,26
Peak reverse recovery current IRM Tj=25°C Rgon=80Ohm 15 300 7 Α
Rückstromspitze Tj=125°C 9,4
Reverse recovery time trr Tj=25°C Rgon=80Ohm 15 300 7 ns
Sperreverzögerungszeit Tj=125°C 65
Reverse recovered charge Qrr Tj=25°C Rgon=80Ohm 15 300 7 uC
Sperrverzögerungsladung Tj=125°C 0,034
Reverse recovered energy Erec Tj=25°C Rgon=80Ohm 15 300 7 mWs
Sperrverzögerungsenergie Tj=125°C 0,04
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip RthJH
Thermal grease
thickness≤50um 3,3 K/W
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip RthJC
Warmeleitpaste
Dicke≤50um
λ = 0,61 W/mK 2,2 K/W
Coupled thermal resistance inverter
transistor-diode RthJH
Thermal grease
thickness≤50um 0,6 K/W
Gekoppelte Wärmewiderstand Wechselrichter
Transistor-Diode
W
arme
l
e
it
pas
t
e
Dicke≤50um
λ = 0,61 W/mK
NTC-Thermistor
NTC-Widerstand
Rated resistance R25 Tj=25°C Tol. ±5% 20,9 22 23,1 kOhm
Nennwiderstand
Deviation of R100 DR/R Tc=100°C R100=1503Ohm 2,9 %/K
Abweichung von R100
Power dissipation given Epcos-Typ P Tj=25°C 210 mW
Verlustleistung Epcos-Typ angeben
B-value B(25/100) Tj=25°C Tol. ±3% 3980 K
B-Wert
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter
Figure 1. Typical output characteristics Figure 2. Typical output characteristics
Output inverter IGBT Output inverter IGBT
Ic= f(
V
CE) Ic= f(
V
CE)
p
arameter: tp = 250
µ
s Tj = 25 °C
p
arameter: tp = 250
µ
s Tj = 125 °C
VGE parameter: from: 6 V to 16 V VGE parameter: from: 6 V to 16 V
in 1 V steps in 1 V steps
Figure 3. Typical transfer characteristics Figure 4. Typical diode forward current as
Output inverter IGBT a function of forward voltage
Ic= f(
V
GE) Output inverter FRED
I
F=f(
V
F)
parameter: tp = 250 µsV
CE = 14 V parameter: tp = 250 µs
0
2
4
6
8
10
12
14
16
18
20
012345
VCE (V)
IC (A)
0
2
4
6
8
10
12
14
0246810
VGE (V)
IC (A)
125 oC
25
0
2
4
6
8
10
12
14
0 0,5 1 1,5 2 2,5 3
VF (V)
IF (A)
25oC
125 oC
0
2
4
6
8
10
12
14
16
18
20
012345
VCE (V)
IC (A)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter
Figure 5. Typical switching energy losses Figure 6. Typical switching energy losses
as a function of collector current as a function of gate resistor
Output inverter IGBT Output inverter IGBT
E = f (Ic) E = f (RG)
inductive load, Tj = 125 °C inductive load, Tj = 125 °C
VCE = 300 V VCE = 300 V
VGE=15V VGE=15V
RGon = 2*RGoff =80ΩIc
=
7A
Figure 7. Typical switching times as a Figure 8. Typical switching times as a
function of collector current function of gate resistor
Output inverter IGBT Output inverter IGBT
t = f (Ic) t = f (RG)
inductive load, Tj = 125 °C inductive load, Tj = 125 °C
VCE = 300 V VCE = 300 V
VGE=15V VGE=15V
RGon = 2*RGoff =80ΩIc
=
7A
tdoff
tf
tdon
tr
0,001
0,01
0,1
1
02468101214
IC (A)
t ( µs)
Eoff
Eon
Erec
0
0,05
0,1
0,15
0,2
0,25
0,3
0 2 4 6 8 10 12 14
IC (A)
E (mWs)
Eoff
Eon
Erec
0
0,05
0,1
0,15
0,2
0,25
0,3
0 100 200 300 400
RG (
Ω
)
E (mWs)
tdoff
tf
tdon
tr
0,001
0,01
0,1
1
0 50 100 150 200 250 300 350 400
RG (
Ω
)
t ( µs)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter
Figure 9. Typical reverse recovery time Figure 10. Typical reverse recovery current
as a function of gate resistor as a function of gate resistor
Output inverter FRED diode Output inverter FRED diode
t
rr = f (Rgon)
I
RRM = f (Rgon)
Tj = 125 °C Tj = 125 °C
VR = 300 V VR = 300 V
In= 7 A In= 7 A
Figure 11. Typical reverse recovery charge Figure 12. Typical diode peak rate of fall of
as a function of gate resistor forward and reverse recovery current
Output inverter FRED diode as a function of gate resistor
Qrr = f (Rgon) Output inverter FRED diode
di0/dt,dIrec/dt= f (Rgon)
Tj = 125 °C Tj = 125 °C
VR = 300 V VR = 300 V
In= 7 A In= 7 A
In
0,2*In
1,8*In
0
0,02
0,04
0,06
0,08
0,1
0,12
0,14
0 50 100 150 200 250 300 350 400
RG (
Ω
)
t rr(µs)
1,8*In
0,2*In
In
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250 300 350 400
RG (
Ω
)
IrrM (A)
1,8*In
0,2*In
In
0
0,1
0,2
0,3
0,4
0,5
0,6
0 50 100 150 200 250 300 350 400
RG (
Ω
)
Qrr ( µC)
dIrec/dt
dI0/dt
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400
RG (
Ω
)
direc / dt (A/ µs)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter
Figure 13. IGBT transient thermal impedance Figure 14. FRED transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
Parameter: D = tp / T RthJH
=
2,5 K/W Parameter: D = tp / T RthJH
=
3,3 K/W
IGBT thermal model values FRED thermal model values
R (C/W) Tau (s) R (C/W) Tau (s)
0,05 1,2E+02 0,06 9,3E+01
0,16 1,7E+00 0,20 1,3E+00
0,65 2,0E-01
tp (s)
ZthJH (K/W)
D
= 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
101
100
10-1
10-2
10-4 10-3 10-2 10-1 100101
10-5 tp (s)
ZthJH (K/W)
D
= 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
101
100
10-1
10-2
10-4 10-3 10-2 10-1 100101
10-5
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter
Figure 15. Power dissipation as a Figure 16. Collector current as a
function of heatsink temperature function of heatsink temperature
Output inverter IGBT Output inverter IGBT
Ptot = f (Th)
I
c= f (Th)
p
arameter: Tj = 150°C
p
arameter: Tj = 150°C
VGE=15V
Figure 17. Power dissipation as a Figure 18. Forward current as a
function of heatsink temperature function of heatsink temperature
Output inverter FRED Output inverter FRED
Ptot = f (Th)
I
F= f (Th)
p
arameter: Tj = 150°C
p
arameter: Tj = 150°C
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160
Th (oC)
Ptot (W)
0
5
10
15
20
25
0 20 40 60 80 100 120 140 160
Th (oC)
IC (A)
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140 160
Th (oC)
Ptot (W)
0
5
10
15
20
25
0 20 40 60 80 100 120 140 160
Th (oC)
IF (A)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Input rectifier bridge
Figure 37. Typical diode forward current as Figure 38. Diode transient thermal impedance
a function of forward voltage as a function of pulse width
Rectifier diode IF=f(VF)ZthJH = f(tp)
p
arameter: tp = 250
µ
s Parameter: D = tp / T RthJH
=
1,9 K/W
Figure 39. Power dissipation as a Figure 40. Forward current as a
function of heatsink temperature function of heatsink temperature
Rectifier diode Rectifier diode
Ptot = f (Th)
I
F= f (Th)
parameter: Tj = 150°C parameter: Tj = 150°C
0
10
20
30
40
50
60
0 0,5 1 1,5 2
VF (V)
IF (A)
25°C125°C
0
20
40
60
80
100
0 50 100 150 200
Th (oC)
Ptot (W)
0
5
10
15
20
25
30
35
40
45
0 20 40 60 80 100 120 140 160
Th (oC)
IF (A)
tp (s)
ZthJC (K/W)
D
= 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
101
100
10-1
10-2
10-4 10-3 10-2 10-1 100101
10-5
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Thermistor
Figure 41. Typical NTC characteristic
as afunction of temperature
NTC
RT / R25 = f (T)
NTC-typical temperature characteristic
0
5
10
15
20
25 45 65 85 105 125 145
T (°C)
RT/R25
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter application
General conditions: 3 phase SPWM, Vgeon= 15 V Vgeoff=0V Rgon= 80 ohms Rgoff
=
40 ohms
Figure 1. Typical avarage static loss Figure 2. Typical avarage static loss
as a function of output current as a function of output current
IGBT Ploss=f(Iout) FRED Ploss=f(Iout)
Conditions: Tj=125°C Conditions: Tj=125°C
Modulation index * cosfi Modulation index * cosfi
parameter Mi*cosfi from -1,00 to 1,00 parameter Mi*cosfi from -1,00 to 1,00
in 0,20 steps in 0,20 steps
Figure 3. Typical avarage switching loss Figure 4. Typical avarage switching loss
as a function of output current as a function of output current
IGBT Ploss=f(Iout) FRED Ploss=f(Iout)
Conditions: Tj=125C Conditions: Tj=125C
DC link= 320 V DC link= 320 V
Switching freq. fsw from 2 kHz t
o
16 kHz Switching freq. fsw from 2 kHz t
o
16 kHz
parameter in * 2 steps parameter in * 2 steps
Mi*cosfi=-1
Mi*cosfi=1
0
5
10
15
20
25
02468101214
Iout (A)
Ploss (W)
Mi*cosfi=-1
Mi*cosfi=1
0
1
2
3
4
5
6
7
8
9
10
02468101214
Iout (A)
Ploss (W)
fsw=2kHz
fsw=16kHz
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
02468101214
Iout (A)
Ploss (W)
fsw=2kHz
fsw=16kHz
0,0
0,1
0,2
0,3
0,4
0,5
0,6
02468101214
Iout (A)
Ploss (W)
Mi*cosfi=-1
Mi*cosfi=1
0
5
10
15
20
25
02468101214
Iout (A)
Ploss (W)
Mi*cosfi=-1
Mi*cosfi=1
0
1
2
3
4
5
6
7
8
9
10
02468101214
Iout (A)
Ploss (W)
fsw=2kHz
fsw=16kHz
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
02468101214
Iout (A)
Ploss (W)
fsw=2kHz
fsw=16kHz
0,0
0,1
0,2
0,3
0,4
0,5
0,6
02468101214
Iout (A)
Ploss (W)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter application
General conditions: 3 phase SPWM, Vgeon= 15 V Vgeoff=0V Rgon= 80 ohms Rgoff
=
40 ohms
Figure 5. Typical available 50Hz output current Figure 6. Typical available 50Hz output current
as a function of Mi*cosfi as a function of switching frequency
Phase Iout=f(Mi*cosfi) Phase Iout=f(fsw)
Conditions: Tj=125C Conditions: Tj=125C
DC link= 320 V DC link= 320 V
fsw= 16 kHz Mi*cosfi= 0,8
Heatsink temp. Th from 60 °C to 100 °C Heatsink temp. Th from 60 °C to 100 °C
parameter in 5 °C steps parameter in 5 °C steps
Figure 7. Typical available 50Hz output current Figure 8. Typical available 0Hz output current
as a function of Mi*cosfi and fsw as a function of switching frequency
Phase Iout=f(Mi*cosfi) Phase Ioutpeak=f(fsw)
Conditions: Tj=125C Conditions: Tj=125C
DC link= 320 V DC link= 320 V
Th= 80 °C Heatsink temp. Th from 60 °C to 100 °C
parameter in 5 °C steps
Th=60°C
Th=100°C
0
2
4
6
8
10
12
14
16
18
20
-1,0 -0,8 -0,6 -0,4 -0,2 0,0 0,2 0,4 0,6 0,8 1,0
Mi*cosfi
Iout (A)
Th=60°C
Th=100°C
0
2
4
6
8
10
12
14
16
18
20
1 10 100
f
sw (kHz)
Iout (A)
Th=60°C
Th=100°C
0
2
4
6
8
10
12
14
16
18
20
1 10 100
f
sw (kHz)
Iout (Apeak)
1248163264
-1,00
-0,80
-0,60
-0,40
-0,20
0,00
0,20
0,40
0,60
0,80
1,00
Iout (A)
18-20
16-18
14-16
12-14
10-12
8-10
6-8
Mi*cosfi
fsw (kHz)
Th=60°C
Th=100°C
0
2
4
6
8
10
12
14
16
18
20
-1,0 -0,8 -0,6 -0,4 -0,2 0,0 0,2 0,4 0,6 0,8 1,0
Mi*cosfi
Iout (A)
Th=60°C
Th=100°C
0
2
4
6
8
10
12
14
16
18
20
1 10 100
f
sw (kHz)
Iout (A)
Th=60°C
Th=100°C
0
2
4
6
8
10
12
14
16
18
20
1 10 100
f
sw (kHz)
Iout (Apeak)
1248163264
-1,00
-0,80
-0,60
-0,40
-0,20
0,00
0,20
0,40
0,60
0,80
1,00
Iout (A)
18-20
16-18
14-16
12-14
10-12
8-10
6-8
Mi*cosfi
fsw (kHz)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P442-C data sheet
version 02/03
flow PIM
®
0+E, 600V
Output inverter application
General conditions: 3 phase SPWM, Vgeon= 15 V Vgeoff=0V Rgon= 80 ohms Rgoff
=
40 ohms
Figure 9. Typical available electric Figure 10. Typical efficiency
peak output power as a as a function of output power
function of heatsink temperature
Inverter Pout=f(Th) Inverter efficiency=f(Pout)
Conditions: Tj=125C Conditions: Tj=125C
DC link= 320 V DC link= 320 V
Modulation index Mi= 1 Modulation index Mi= 1
cosfi= 0,80 cosfi= 0,80
Switching freq. fsw from 2 kHz t
o
16 kHz Switching freq. fsw from 2 kHz t
o
16 kHz
parameter in * 2 steps parameter in * 2 steps
Figure 11. Typical available overload factor
as a function of motor power
and switching frequency
Inverter Ppeak/Pnom=f(Pnom,fsw)
Conditions: Tj=125C
DC link= 320 V
Modulation index Mi= 1
cosfi= 0,8
Switching freq. fsw from 1 kHz t
o
16 kHz
parameter in * 2 steps
Heatsink temperature= 80 °C
Motor efficiency= 1
2kHz
16kHz
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
60 65 70 75 80 85 90 95 100
Th (oC)
Pout (kW)
2kHz
16kHz
94,5
95,0
95,5
96,0
96,5
97,0
97,5
98,0
98,5
01234
Pout (kW)
efficiency (%)
Switching frequency (kHz
)
100
150
200
250
300
350
400
450
500
Motor nominal power (HP)
Overload (%)
1718 478 359 239 179 120 0 0
2712 475 356 237 178 119 0 0
4700 467 350 233 175 117 0 0
8678 452 339 226 169 113 0 0
16 635 423 317 212 159 0 0 0
0,5 0,75 1 1,5 2 3 5 7,5
2kHz
16kHz
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
60 65 70 75 80 85 90 95 100
Th (oC)
Pout (kW)
2kHz
16kHz
94,5
95,0
95,5
96,0
96,5
97,0
97,5
98,0
98,5
01234
Pout (kW)
efficiency (%)
Switching frequency (kHz
)
100
150
200
250
300
350
400
450
500
Motor nominal power (HP)
Overload (%)
1717,696 478,464 358,848 239,232 179,424 119,616 0 0
2711,81 474,54 355,905 237,27 177,953 118,635 0 0
4700,193 466,795 350,096 233,398 175,048 116,699 0 0
8677,569 451,712 338,784 225,856 169,392 112,928 0 0
16 634,712 423,141 317,356 211,571 158,678 0 0 0
0,5 0,75 1 1,5 2 3 5 7,5
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com