RB451F Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Features * available in UMD3 (UMD, SC-70, SOT-323) package * part marking, 3C Applications * low power rectifying Dimensions (Units : mm) 20402 lec ods Hl | al bo 0.3+0.1 0.9+0.1 0.6 4 0.15+0.05 (each lead has the same dimensions) a~0.1 0.1 Min J} 0.8 Min. . : ; 3.9 Min. |- --4-+- 1.6 1 ey! a bs 1. Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Peak reverse voltage Vam 20 Vv DC reverse voltage Vr 10 Vv Mean rectifying current lo 0.1 A Peak forward surge current lesm 1 A |At 60 Hz for 1 cycle Junction temperature Tj 125 C Storage temperature Tstg 40 ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min |Typical} Max Unit Conditions Vey 0.45 0.55 Vsfip = 100 mA Forward voltage Veo 0.28 0.34 Vs fip=10mA Reverse current IR 1.0 30 mA |VR=l0V Capacitance between _ _ terminals Cr 6.0 pF |V_=10V, f= 1 MHz Diodes Roum 167RB451F Schottky barrier diodes Electrical characteristic curves 1 10m Typ. yp. pulse measurement measurement < 100m - Im ~ <t a ~ v = 5 10m - 100 4s iw Zz a Ww 5 & 2 3 5 lm Oo 104 a Ww < a = load x wy 1 e x 2 100% a 10 Oly oO a1 0 0 04 05 06 FORWARD VOLTAGE : Vr (V} REVERSE VOLTAGE : Va (V} Figure 1 Figure 2 0 Q REVERSE VOLTAGE : Va (V) Figure 3 CAPACITANCE BETWEEN TERMINALS : Cr (pF) 168 RONM Diodes