©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC846/847/848/849/850
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC84 6
: BC847/850
: BC848/849
80
50
30
V
V
V
VCEO Collector-Emitter Voltage
: BC84 6
: BC847/850
: BC848/849
65
45
30
V
V
V
VEBO Emitter-Base Voltage : BC846/847
: BC848/849/850 6
5V
V
ICCollector Current (DC) 100 mA
PCCollector Power Dissipation 310 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ . Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 110 800
VCE (sat) Collector-Emitter Saturat ion Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 90
200 250
600 mV
mV
VBE (sat) Collector-Base Saturat ion Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 700
900 mV
mV
VBE (on) Base-Emit ter On Voltage VCE=5V, IC=2mA
VCE=5V, IC=10mA 580 660 700
720 mV
mV
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Cib Input Capacitance VEB=0.5V, IC=0, f=1 MHz 9 pF
NF Noise Figure : BC846/847/848
: BC849/850
: BC849
: BC850
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ, f=30~15000Hz
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
BC846/847/848/849/850
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC846/847/848/849/850
hFE Classification
Marking Code
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
Type 846 847 848 849 850
ABCABCABCABCABC
Mark 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC
©2002 Fairchild Semiconductor Corporation
BC846/847/848/849/850
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
048121620
0
20
40
60
80
100
IB = 50µA
IB = 100µA
IB = 150µA
IB = 200µA
IB = 250µA
IB = 300µA
IB = 350µA
IB = 400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
10
100
1000
10000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
0.1
1
10
100
f=1MHz
Cob[pF], CAPACITANC E
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE=5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Package Dimensions
BC846/847/848/849/850
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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As used herein:
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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