F AST DMOS FET Switches
N-Channel Enhancement-Mode
SST211 / SST213 / SST215
FEATURES
••High Speed Switching. . . . . . . . . . . . . . . . . . . . td(ON) 1ns
••Lo w Ca paci tanc e. . . . . . . . . . . . . . . . . . . . . 2.4p F typical
••Low ON Resistance. . . . . . . . . . . . . . . . . . . . 50Ω typycal
••High G ai n
••Surf ace Mo u nt Packag e
APPLICATIONS
••Ult ra Hi gh Speed Analog Sw itch in g
••Sampl e an d Hold
••Multiplexers
••High Gai n Am pl i fie rs
DESCRIPTION
Designed for audio, video and high frequency applications,
the SST211 Series is a high speed, ultra low capacitance
SPST analog switch. Utilizing Calogic’s proprietary DMOS
processing the SST211 Series features an integrated zener
diode designe d to prote ct the gate from elec trical over stress .
ORDERING INFORMATION
Part Package Temperature Range
SST211 SOT-143 Surface Mount -55oC to +125oC
SST213 SOT-143 Surface Mount -55oC to +125oC
SST215 SOT-143 Surface Mount -55oC to +125oC
XSST211 Sorte d Chips in Carrier s -55oC to +125oC
XSST213 Sor te d Chips in Carrier s -55oC to +125oC
XSST215 Sor te d Chips in Carrier s -55oC to +125oC
CORPORATION
PIN CONFI G UR ATION SCHEMATIC DI AGRAM
3
2
4
1
GATE
(3)
DRAIN
(2)
BODY
(4)
SOURCE
(1)
CD1-1
PRO DUCT MARKING
SST211 211
SST213 213
SST215 215
SST211 / SST213 / SST215
CORPORATION
ABSOLUTE M AXIM UM R A T INGS (Tc = +25 oC unless otherwise noted )
Parameter
Break down Voltages SST211 SST213 SST215 Un it
VDS +30 +10 +20 V
VSD +10 +10 +20 V
VDB +30 +15 +25 V
VSB +15 +15 +25 V
VGS -15 -15 -25 V
+25 +25 +30 V
VGB -0.3 -0.3 -0.3 V
+25 +25 +30 V
VGD -30 -15 -25 V
+25 +25 +30 V
IDCont inous Drain Cur r ent . . . . . . . . . . . . . . . . . . . . . 50m A TjOperat ing Jun ction Tem p erat ure Rang e . . -55 to +125oC
PTPower Dissipation ( at or below Tc = +25oC) . . . . 360mW TSStorage Temperat ure Range . . . . . . . . . . . -55 to +150oC
Linear Derating Factor3.6 m W/ o
ELECTRICA L CHARACTERI STICS (Tc = +25oC un less other wise no ted)
SYMBOL CHARACTERISTICS SST211 SST213 SST215 UNIT TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
STATIC
BVDS Drain-Source
Breakdown Voltage 30 35
V
ID = 10µA, VGS = VBS = 0
10 25 10 25 20 25 ID = 10 nA, V GS = VBS = -5V
BVSD Source-Drain Breakdown Voltage 10 10 20 IS = 10 nA, VGD = VBD = -5V
BVDB Drain-Body
Breakdown Voltage 15 15 25 ID = 10 nA, VGB = 0 Source
OPEN
BVSB Source-Body
Breakdown Voltage 15 15 25 IS = 10µA, VGB = 0 Drain OPEN
ID(OFF) Drain-Source
OFF Current 0.2 10 0.2 10
nA
VDS = 10V VGS = VBS = -5V
0.2 10 VDS = 20V
IS(OFF) Source-Drain
OFF Current 0.6 10 0.6 10 VSD = 10V VGD = VBD = -5V
0.6 10 VSD = 20V
IGBS Gate-Body
Leakage Current 10 10 µAVGB = 25V VDB = VSB = 0
10 VGB = 30V
VGS(th) G ate Threshold Voltage 0.5 1.0 2.0 0.1 2.0 0.1 1.0 2.0 V VDS = V GS, ID = 1µA, VSB = 0
rds(on) Drain-Source 1
ON Resistance 50 70 50 70 50 70 ohms VGS = 5V ID = 1mA
VSB = 0
30 45 30 45 30 45 VGS = 10V
DYNAMIC
gfs Common-Source 1
Foward Transcond. 10 12 10 12 10 12 mS VDS = 10V, ID = 20mA
f = 1KHz, VSB = 0
C(gs + gd + gb) Gate Node Capacitance 2.4 3.5 2.4 3.5 2.4 3.5
pF VDS = 10V
VGS = VBS = -15V
f = 1MHz
C(gd + db) Drain Node Capacitance 1.3 1.5 1.3 1.5 1.3 1.5
C(gs + sb) Source Node Capacitance 3.5 4.0 3.5 4.0 3.5 4.0
C(dg) Reverse Transfer Capacitance 0.3 0.5 0.3 0.5 0.3 0.5
td(ON) Turn ON Delay Time 0.7 1.0 0.7 1.0 0.7 1.0 ns VDD = 5V, VG(ON) = 10V
RL = 680, RG = 51
trRise Ti me 0.8 1.0 0.8 1.0 0.8 1.0
t(OFF) Turn OFF Time 10 10 10
NOTE 1: Pulse Te st , 8 0 Se c, 1% Duty Cycle
Typ ical Perfo rma nce Cha racteristi cs: See SD211 -21 5 Serie s
