2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 A to 100 mA. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 2001 Fairchild Semiconductor Corporation Max Units 2N4125 625 5.0 83.3 mW mW/C C/W 200 C/W 2N4125, Rev A (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 30 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 A, IE = 0 30 V 4.0 Collector-Cutoff Current IE = 10 A, I C = 0 VCB = 20 V, IE = 0 ICBO IEBO Emitter-Cutoff Current VEB = 3.0 V, I C = 0 V 50 nA 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VCE = 1.0 V, I C = 2.0 mA VCE = 1.0 V, I C = 50 mA IC = 50 mA, IB = 5.0 mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V 50 25 150 SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF Cib Input Capacitance VBE = 0.5 V, f = 100 kHz 10 pF hfe Small-Signal Current Gain I C = 2.0 mA, VCE = 10 V, f = 1.0 kHz I C = 10 mA, VCE = 20 V, f = 100 MHz VCE = 5.0 V, I C = 100 A, RS = 1.0 k, f = 10Hz to 15.7 kHz, NF Noise Figure *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 50 200 2.0 5.0 dB 2N4125 PNP General Purpose Amplifier (continued) 250 V CE = 1 .0V 125 C 200 150 25 C 100 50 0.1 - 40 C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 Base-Emitter Saturation Voltage vs Collector Current = 10 1 - 40 C 0.8 25 C 125 C 0.6 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 = 10 0.25 0.2 0.15 25 C 0.1 125C 0.05 0 - 40 C 1 1 0.8 - 40 C 125 C 0.4 = 25V 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 10 C obo CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) V CE = 1V 0.2 Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 1 0.1 0.01 25 25 C 0.6 100 CB 200 Base Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 10 100 I C - COLLECTOR CURRENT (mA) 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 8 6 4 C ibo 2 0 0.1 1 REVERSE BIAS VOLTAGE (V) 10 2N4125 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 6 12 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 3 I C = 100 A, R S = 200 2 I C = 1.0 mA, R S = 200 1 I C = 100 A, R S = 2.0 k 0 0.1 1 10 f - FREQUENCY (kHz) V CE = 5.0V f = 1.0 kHz 10 I C = 1.0 mA 8 6 4 I C = 100 A 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( k ) Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 Ic t off I = I = B1 B2 10 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 1 100 1 I 10 - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 100 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 100 2N4125 PNP General Purpose Amplifier (continued) Typical Characteristics Input Impedance Voltage Feedback Ratio ) 10 100 h ie - INPUT IMPEDANCE (k ) _ 4 h re - VOLTAGE FEEDBACK RATIO (x10 (continued) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 1 0.1 0.1 10 1 I C - COLLECTOR CURRENT (mA) 10 Current Gain 1000 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( mhos) Output Admittance 1000 VCE = 10 V f = 1.0 kHz 100 V CE = 10 V f = 1.0 kHz 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 2N4125 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G