© Semiconductor Components Industries, LLC, 1997
September, 2020 − Rev. 3
1Publication Order Number:
MMBFJ113/D
N-Channel Switch
J111, J112, J113,
MMBFJ111, MMBFJ112,
MMBFJ113
Features
•This Device is Designed for Low Level Analog Switching, Sample
and Hold Circuits and Chopper Stabilized Amplifiers
•Sourced from Process 51
•Source & Drain are Interchangeable
•These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
(Note 1, 2)
Symbol Parameter Value Unit
VDG Drain−Gate Voltage 35 V
VGS Gate−Source Voltage −35 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction
Temperature Range
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter
Max
Unit
J111 / J112 /
J113
(Note 3)
MMBFJ111 /
MMBFJ112 /
MMBFJ113
(Note 4)
PD Total Device Dissipation 625 350 mW
Derate Above 25_C5.0 2.8 mW/°C
RqJC Thermal Resistance,
Junction−to−Case
125 −°C/W
RqJA Thermal Resistance,
Junction−to−Ambient
200 357 °C/W
3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for
the collector lead minimum 6 cm2.
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MARKING DIAGRAM
See detailed ordering and shipping information on page 6 of
this data sheet.
ORDERING INFORMATION
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
TO−92 3 4.825x4.76
CASE 135AN
SOT−23 (TO−236)
CASE 318−08
1
XXM
XX, XXXX = Specific Device Code
Z = Assembly Plant Code
XYY = 3−Digit Date Code
M = Date Code
SOT−23
CASE 318BM
ZXYY
XXXX
GSD
GSD
G
S
D
G
S
D
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Max Unit
OFF CHARACTERISTICS
V(BR)GSS Gate−Source Breakdown Voltage IG = −1.0 mA, VDS = 0 −35 −V
IGSS Gate Reverse Current VGS = −15 V, VDS = 0 − −1.0 nA
VGS(off) Gate−Source Cut−Off Voltage VDS = 5 V, ID = 1.0 mA 111 −3.0 −10.0 V
112 −1.0 −5.0
113 −0.5 −3.0
ID(off) Drain Cutoff Leakage Current VDS = 5.0 V, VGS = −10 V −1.0 nA
ON CHARACTERISTICS
IDSS Zero−Gate Voltage Drain Current (Note 5) VDS = 15 V, VGS = 0 111 20 −mA
112 5.0 −
113 2.0 −
rDS(on) Drain−Source On Resistance VDS ≤ 0.1 V, VGS = 0 111 −30 W
112 −50
113 −100
SMALL SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Drain−Gate &Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz −28 pF
Cdg(off) Drain−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz −5.0 pF
Csg(off) Source−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz −5.0 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse test: pulse width ≤300 ms, duty cycle ≤2%.
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
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3
TYPICAL PERFORMANCE CHARACTERISTICS
gfs, TRANSCONDUCTANECE (mW)
0 0.4 0.8 1.2 1.6 2
0
2
4
6
8
10
VDS, DRAIN−SOURCE VOLTAGE (V)
− 0.4 V
− 1.0 V
− 0.8 V
− 0.2 V
− 0.6 V
VGS = 0 V
− 1.2 V
− 1.4 V
0.5 1 2 5 10
5
10
20
50
100
5
10
20
50
100
_
____
−3−2−1
0
0
10
20
30
40
VGS, GATE−SOURCE VOLTAGE (V)
25°C
125°C
− 55°C
25°C
− 55°C
125°C
−1.5−1−0.5
0
0
4
8
12
16
−3−2−10
0
10
20
30
25°C
125°C
− 55°C
25°C
125°C
− 55°C
−1.5−1−0.5
0
0
10
20
30
Figure 1. Common Drain−Source Figure 2. Parameter Interactions
Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics
Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics
VGS(OFF), GATE CUTOFF VOLTAGE (V)
VGS, GATE−SOURCE VOLTAGE (V)
VGS, GATE−SOURCE VOLTAGE (V) VGS, GATE−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (mA)
gfs, TRANSCONDUCTANECE (mW)
rDS, DRAIN “ON” RESISTANCE (mW)
ID, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (mA)gfs, TRANSCONDUCTANECE (mW)
VGS(off) = −2.0 V
VGS(off) = −3.0 V
IDSS, gfs @ VDS = 15 V,
VGS = 0 PULSED
rDS @ 1.0 mA, VGS = 0
VGS(off) @ VDS = 15 V,
ID = 1.0 nA
TA = 25°C
TYP VGS(off) = −2.0 V
IDSS
gfs
fDS
VGS(off) = −2.0 V
VGS(off) = −3.0 V
VDS = 15 V
VDS = 15 V
VDS = 15 V
VDS = 15 V
25°C
125°C
− 55°C
25°C
125°C
− 55°C
VGS(off) = −1.1 V
VGS(off) = −1.6 V
25°C
125°C
− 55°C
VGS(off) = −1.6 V
25°C
125°C
− 55°C
VGS(off) = −1.1 V
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
0 0.2 0.4 0.6 0.8 1
1
2
5
10
20
50
100
12 51020 50100
10
20
50
100
25°C
125°C
25°C
125°C
− 55°C
− 55°C
0.1 1 10
1
10
100
0.01 0.1 10
0.1
1
10
100
10 V
15 V
20 V
5.0 V
10 V
15 V
20 V
5.0 V
−20−16−12−8−40
1
10
100
0.01 1 10 100
1
5
10
50
100
gfs, TRANSCONDUCTANECE (mW)r
DS, DRAIN “ON” RESISTANCE (mW)
VGS/VGS(off), NORMALIZED GATE−SOURCE VOLTAGE (V)ID, DRAIN CURRENT (mA)
Figure 7. On Resistance vs. Drain Current Figure 8. Normalized Drain Resistance vs.
Bias Voltage
Figure 9. Transconductance vs. Drain Current Figure 10. Output Conductance vs. Drain Current
Figure 11. Capacitance vs. Voltage Figure 12. Noise Voltage vs. Frequency
gos, OUTPUT CONDUCTANECE (mW)
VGS(off)
TYP = −7.0 V
VGS(off) @ 5.0 V, 10 mA
rDS @ VGS(off) = 0
VGS(off)
TYP = −2.0 V
rDS +
rDS
1*
VGS
VGS(off)
rDS, NORMALIZED RESISTANCE (W)
ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA)
VGS, GATE−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (mA)
f, FREQUENCY (kHz)
Cis (Crs), CAPACITANCE (pF)
en, NOICE VOLTAGE (nV / √Hz)
10 V
15 V
20 V
TA = 25°C
VDG = 15 V
f = 1.0 kHz
VGS(off) = −1.4 V
VGS(off) = −3.0 V
VGS(off) = −5.0 V
VGS(off) = −0.85 V
VGS(off) = −2.0 V
VDG = 5.0 V
TA = 25°
f = 1.0 kHz
f = 0.1 − 1.0 MHz
Cis (VDS = 0)
Cis (VDS = 20)
Crs (VDS = 0)
VDG = 15 V
BW = 6.0 Hz @ f = 10 Hz,
100 Hz = 0.21 @ f ≥ 1.0 kHz
ID = 1.0 mA
ID = 10 mA
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
www.onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
0.01 0.1 1 10
1
10
100
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
f = 100 kHz
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TO−92
SOT−23
−10−8−6−4−2
0
0
5
10
15
20
25
td(ON)
2.5 mA
− 6.0 V
024 10
0
20
40
60
80
100
− 4.0V
− 7.5V
tr(ON)
VDG = 15 V
ID = 6.6 mA
VDG = 15 V
VDD = 3.0 V
tr APPROX. ID INDEPENDENT
VGS(off) = 3.0 V
TA = 25°C
TA = 25°C
VDD = 3.0 V
VGS = −12 V
td(off) DEVICE
VGS(off) INDEPENDENT
td(off)
t(off)
VGS(off) = −2.2 V
68
td(ON), td(ON), TURN ON TIME (ns) en, NOICE VOLTAGE (nV / √Hz)
TEMPERATURE (°C)ID, DRAIN CURRENT (mA)
td(OFF), tOFF
, TURN OFF TIME (ns) PD, POWER DISSIPATION (mW)
VGS, GATE−SOURCE CUTOFF VOLTAGE (V) ID, DRAIN CURRENT (mA)
Figure 13. Noise Voltage vs. Current Figure 14. Power Dissipation vs.
Ambient Temperature
Figure 15. Switching Turn−On Time vs.
Gate−Source Voltage
Figure 16. Switching Turn−Off Time vs.
Drain Current
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
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6
ORDERING INFORMATION
Part Number Top Mark Package Shipping
†
J111 J111 TO−92 3L
(Pb−Free)
10000 Units / Bulk
J111−D26Z J111 TO−92 3L
(Pb−Free)
2000 / Tape & Reel
J111−D74Z J111 TO−92 3L
(Pb−Free)
2000 / Ammo
J112 J112 TO−92 3L
(Pb−Free)
10000 Units / Bulk
J112−D26Z J112 TO−92 3L
(Pb−Free)
2000 / Tape & Reel
J112−D27Z J112 TO−92 3L
(Pb−Free)
2000 / Tape & Reel
J112−D74Z J112 TO−92 3L
(Pb−Free)
2000 / Ammo
J113 J113 TO−92 3L
(Pb−Free)
10000 Units / Bulk
J113−D74Z J113 TO−92 3L
(Pb−Free)
2000 / Ammo
MMBFJ111 6P SOT−23 3L
(Pb−Free)
3000 / Tape & Reel
MMBFJ112 6R SOT−23 3L
(Pb−Free)
3000 / Tape & Reel
MMBFJ113 6S SOT−23 3L
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13880G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−92 3 4.825X4.76
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13879G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−92 3 4.83X4.76 LEADFORMED
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42226B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT−23 (TO−236)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SOT−23
CASE 318BM
ISSUE O
DATE 31 AUG 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13784G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT−23
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
www.onsemi.com
1
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