SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N E K MAXIMUM RATING (Ta=25) G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current IC -500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Tstg -55150 F L 1 2 C VEBO Emitter-Base Voltage H F 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC J D DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1.0mA, IC=0 -10 - - V Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1.0 A Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -1.0 A DC Current Gain hFE IC=-100mA, VCE=-2V 30k - - Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-1mA - - -1.0 V Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-1mA - -1.5 -2.0 V Current Gain Bandwidth Product fT IC=-100mA, VCE=-2V, f=100MHz - 220 - MHz VCB=-10V, f=1MHz, IE=0 - 5.0 - pF Collector Output Capacitance 2002. 11. 13 Revision No : 0 Cob 1/1