2002. 11. 13 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC516
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -10 V
Collector Current IC-500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Tstg -55～150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1.0mA, IC=0 -10 - - V
Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1.0
μA
Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -1.0 μA
DC Current Gain hFE IC=-100mA, VCE=-2V 30k - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-1mA - - -1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-1mA - -1.5 -2.0 V
Current Gain Bandwidth Product fTIC=-100mA, VCE=-2V, f=100MHz - 220 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 5.0 - pF