Silicon Transistors Type Case 6 = Maximum Ratings at 25C amb. Characteristics SPECIAL No. 83 FEATURES 5 c g 3 Nee fr Vcetsat) oO c NC + o Ves | Voe 1 Ves lo Prot le Min. | Max. le Min. | fg Ig | Max. Vv Vv Vv A Ww mA mA |Mc/s| mA | mA v PNP Chopper 28306 TOS A 6 6 6 | 0-01 0-05 1 30* | -1 15 _ ~ - Offset Voltage 28307 TOS A 15 15 15 0-01 0-05 1 30* _ -1 15 _ 28326 soz | a | -6{ -6| -6| 001 | oo5 | -1 | aoe} | -1 fas | | | [ep imv max . Typical Veccsat) 50mV 25327 $02 A |-158 | -15 | 15 | 001 | 005} -1 | 30%; | -1 [a5 | ~ | | at le 10mA Typical hretinverse) 5 at 1MA Offset Voltage NPN Chopper 2N2432 TO18 PE 30 30 15 | 0-10 0-30 1 50 _ 1 20 10 05 | 0-15 | 500 nV max. Silicon Sub TIS22 Chip-Pak| P 45 45 6 0-05 0-150 0-01 40 300 0-5 3 10 0-1 0-35 3dB Typical Miniature TIS23 Chip-Pak| P 45 45 6 0-05 0-150 0-01 100 120 0:5 3 1:0 0-1 0-35 Noise Figure Devices TIS24 Chip-Pak| P 60 60 6 0-05 0-150 0-001 30 _ 0-5 6 1-0 0-1 0-35 Sili ransistor ilicon Dual Transistors Type Case 5 > Maximum Ratings at 25C amb. Characteristics SPECIAL No. 8 3 FEATURES o~ hee fr |__+ | _*] Veer | 4 Vee Ves'| Vce | Ves lo Prot le Min. Io Min. |Vpeo | ATA | N.F. Vv Vv Vv A Ww A mA | Mc/s | mV |uV/C} dB NPN High 2N2060 TO5-2 P 100 80 7 0-5 0-6 10 25 50 60 5 10 8 |] Average N.F. measured Frequency 2N2223 TO5-2 P 100 80 7 0:5 0-6 10 15 50 50 15 25 ~ { with noise bandwidth Duals 2N2223A TO5-2 P 100 80 7 0-5 0-6 10 15 50 50 5 25 of 15-7 Ke/s 2N2639 TO5-2 P 45 45 5 0-03 0-6 10 50 1 80 5 10 4 | Vee = 10 V,1 = 300 nA, 2N2640 TO5-2 P 45 45 5 0-03 0-6 10 50 1 80 10 20 4 Rg =1K 2N2641 TO5-2 P 45 45 5 0-03 0-6 10 50 1 80 _ 4 Average N.F. measured 2N2642 TO5-2 P 45 45 5 0-03 0-6 10 100 1 80 5 10 4 e with noise bandwidth of 2N2643 TOS-2 Pp 45 45 5 0-03 0-6 10 100 i 80 10 20 4 10 c/s-15-7 Ke/s, 2N2644 TO5-2 P 45 45 5 0-03 0-6 410 100 1 80 _ _ 4 Vog =5 V, Io = 10 HA, 2N3680 TO5-2 P 60 50 5 0-03 0-6 10 150 0-5 60 3 5 3 |} Re = 10 Kohms PNP High 2N3347 TO5-2 PE 60 45 6 0-03 0-6 10 40 1 60 5 10 4/7) Frequency 2N3348 TO5-2 PE 60 45 6 0-03 0-6 10 40 1 60 10 20 4 Average N.F. measured Duals 2N3349 TO5-2 PE 60 45 6 0:03 0-6 10 40 1 60 20 40 4 \ with noise bandwidth 2N3350 TO5-2 PE 60 45 6 0:03 0-6 10 100 1 60 5 10 4 15-7 Ke/s, Vog = 5V, 2N3351 TO5-2 PE 60 45 6 0-03 0-6 10 100 1 60 10 40 4 lo = 10 nA, Rg= 10K 2N3352 TO5-2 PE 60 45 6 0-03 0-6 10 100 1 60 20 20 4 | NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hee: Under fr: Under Dissipation: A Alloyed * hte o fhb t dissipation at Tcase = 25C D Diffused A fhte E Epitaxial t typical G Grown M Mesa P Planar 13